Fairchild Semiconductor BAS31 Datasheet
BAS31
321
CONNECTION DIAGRAM
BAS31
Discrete POWER & Signal
Technologies
3
3
L21
2
SOT-23
1
High Voltage General Purpose Diode
Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Working Inverse Voltage 90 V
Average Rectified Current 200 mA
DC For ward Cur re nt 600 mA
Recurrent Peak Forward Current 700 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -50 to +150
Operating Junction Temperature 150 °C
12
1.0
2.0
A
A
°C
1997 Fairchild Semiconductor Corporation
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
BAS31
P
D
R
θ
JA
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
°C/W
High Voltage General Purpose Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Br eakdo wn V oltage IR = 1.0 mA 120 V
Reverse Current VR = 90 V
= 90 V, TA = 150°C
V
R
Forward Voltage IF = 10 mA
= 50 mA
I
F
IF = 100 mA
= 200 mA
I
F
= 400 mA
I
F
100
100
750
840
900
1.0
1.25
nA
µ
mV
mV
mV
Diode Capacitance VR = 0, f = 1.0 MHz 35 pF
Reverse Recovery Time IF = IR = 30 mA, VR = 6.0 V,
= 3.0 mA, RL = 100
I
RR
Ω
50 nS
A
V
V
BAS31
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