Fairchild Semiconductor BAS16 Datasheet
BAS16
2 NC
3
1
CONNECTION DIAGRAM
BAS16
Discrete POWER & Signal
Technologies
3
3
A6
2
SOT-23
1
High Conductance Ultra Fast Diode
Sourced from Process 1P. See BAV99 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Working Inverse Voltage 75 V
Average Rectified Current 200 mA
DC For ward Cur re nt 600 mA
Recurrent Peak Forward Current 700 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -50 to +150
Operating Junction Temperature 150 °C
12
1.0
2.0
A
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BAS16
P
D
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip ation
Derate above 25°C
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
°C/W
High Conductance UItra Fast Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Br eakdo wn V oltage IR = 5.0 µA85V
Reverse Current
= 25 V, TA = 150°C
V
R
VR = 75 V
VR = 75 V, TA = 150°C
Forward Voltage IF = 1.0 mA
= 10 mA
I
F
= 50 mA
I
F
IF = 150 mA
30
1.0
50
715
855
1.0
1.25
µ
µ
µ
mV
mV
V
V
A
A
A
Diode Capacitance VR = 0, f = 1.0 M Hz 2.0 pF
Reverse Recovery Time IF = 10 mA, VR = 6.0 V,
= 1.0 mA, RL = 100
I
RR
Ω
6.0 nS
BAS16
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