Fairchild SS8550 service manual
SS8550
2W Output Amplifier of Portable Radios in Class B Push-pull Operation
Features
• Complimentary to SS8050
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=1W (TC=25×C)
1
1. Emitter 2. Base 3. Collector
March 2008
TO-92
SS8550 — 2W Output Amplifier of Portable Radios in Class B Push-pull Operation
Absolute Maximum Ratings T
=25×C unless otherwise noted
a
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics T
Collector-Base Voltage -40 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -6 V
Collector Current -1.5 A
Collector Power Dissipation 1 W
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
=25×C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
(sat) Collector-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.28 -0.5 V
CE
V
(sat) Base-Emitter Saturation Voltage IC= -800mA, IB= -80mA -0.98 -1.2 V
BE
Collector-Base Breakdown Voltage IC= -100μA, IE=0 -40 V
Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 V
Emitter-Base Breakdown Voltage IE= -100μA, IC=0 -6 V
Collector Cut-off Current VCB= -35V, IE=0 -100 nA
Emitter Cut-off Current VEB= -6V, IC=0 -100 nA
DC Current Gain VCE= -1V, IC= -5mA
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
45
85
40
170
160
80
300
VBE (on) Base-Emitter on Voltage VCE= -1V, IC= -10mA -0.66 -1.0 V
C
ob
f
T
Output Capacitance VCB= -10V, IE=0
15 pF
f=1MHz
Current Gain Bandwidth Product VCE= -10V, IC= -50mA 100 200 MHz
hFEClassification
Classification B C D
h
FE2
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8550 Rev. 1.0.0 1
85 ~ 160 120 ~ 200 160 ~ 300
Typical Performance Characteristics
SS8550 — Features
[mA], COLLECTOR CURRENT
C
I
-0.5
-0.4
-0.3
-0.2
-0.1
-0.4 -0.8 -1.2 -1.6 -2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10000
-1000
-100
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
-10
V
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
V
BE(sat)
V
CE(sat)
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
IC=10I
1000
VCE = -1V
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
B
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VCE = -1V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Collector-Emitter Saturation Vo lta ge
100
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE
f=1MHz
I
=0
E
1000
100
10
-1 -10 -100 -1000
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
VCE=-10V
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8550 Rev. 1.0.0 2
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