Fairchild SGR20N40L service manual
查询SGR20N40L供应商
SGR20N40L / SGU20N40L
August 2001
SGR20N40L / SGU20N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Application
Strobe flash.
C
D-PAK
E
G
GEC
I-PAK
Features
• High input impedance
• High peak current capability (150A)
• Easy gate drive
• Surface Mount : SGR20N40L
• Straight Lead : SGU20N40L
C
C
G
G
E
E
IGBT
Absolute Maximum Ratings T
Symbol Description SGR / SGU20N40L Units
V
CES
V
GES
I
CM (1)
P
C
T
Operating Junction Temperature -40 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector - Emitter Voltage 400 V
Gate - Emitter Voltage ± 6V
Pulsed Collector Current 150 A
M a x i m u m P o w e r D i s s i p a t ion @ TC = 25°C45 W
Storage Temperature Range -40 to +150 °C
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
= 25°C unless otherwise noted
C
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
(D-PAK) Thermal Resistance, Junction-to-Ambient (PCB Mount)
θJA
(I-PAK) Thermal Resistance, Junction-to-Ambient -- 110 °C/W
R
θJA
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
Thermal Resistance, Junction-to-Case -- 3.0 °C/W
(2)
-- 50 °C/W
©2001 Fairchild Semiconductor Corporation
SGR20N40L / SGU20N40L Rev. A1
SGR20N40L / SGU20N40L
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
I
CES
I
GES
CES
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 450 -- -- V
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
, VGE = 0V -- -- 10 µA
CES
, VCE = 0V -- -- ± 0.1 µA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 1mA, VCE = V
GE
0.5 1.0 1.4 V
C-E Saturation Current IC = 150A, VGE = 4.5V 2.0 4.5 8.0 V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 50 -- pF
Reverse Transfer Capacitance -- 35 -- pF
V
GE
= 0V, V
CE
= 30V,
f = 1MHz
-- 3800 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
* Notes : Recommendation of RG Value : RG≥15Ω
Turn-On Delay Time
Rise Time -- 1.7 -- µs
Turn-Off Delay Time -- 0.3 0.5 µs
Fall Time -- 1.5 2.0 µs
= 300V, IC = 150A,
V
CC
= 4.5V, RG = 15Ω*
V
GE
Resistive Load
-- 0.2 -- µs
©2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Rev. A1
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