Datasheet SGR20N40L Datasheet (Fairchild)

查询SGR20N40L供应商

SGR20N40L / SGU20N40L

August 2001

SGR20N40L / SGU20N40L

General Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications

Application

Strobe flash.

C

D-PAK

E

G

GEC

I-PAK

Features

• High input impedance

• High peak current capability (150A)

• Easy gate drive

• Surface Mount : SGR20N40L

• Straight Lead : SGU20N40L

C

C

G

G

E

E

IGBT

Absolute Maximum Ratings T

Symbol Description SGR / SGU20N40L Units

V

CES

V

GES

I

CM (1)

P

C

T

Operating Junction Temperature -40 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector - Emitter Voltage 400 V
Gate - Emitter Voltage ± 6V
Pulsed Collector Current 150 A
M a x i m u m P o w e r D i s s i p a t ion @ TC = 25°C45 W

Storage Temperature Range -40 to +150 °C
Maximum Lead Temp. for soldering

purposes, 1/8” from case for 5 seconds

= 25°C unless otherwise noted

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

(D-PAK) Thermal Resistance, Junction-to-Ambient (PCB Mount)

θJA

(I-PAK) Thermal Resistance, Junction-to-Ambient -- 110 °C/W

R

θJA

Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)

Thermal Resistance, Junction-to-Case -- 3.0 °C/W

(2)

-- 50 °C/W

©2001 Fairchild Semiconductor Corporation

SGR20N40L / SGU20N40L Rev. A1

SGR20N40L / SGU20N40L

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
I

CES

I

GES

CES

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 450 -- -- V
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

, VGE = 0V -- -- 10 µA

CES

, VCE = 0V -- -- ± 0.1 µA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 1mA, VCE = V

GE

0.5 1.0 1.4 V

C-E Saturation Current IC = 150A, VGE = 4.5V 2.0 4.5 8.0 V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 50 -- pF
Reverse Transfer Capacitance -- 35 -- pF

V

GE

= 0V, V

CE

= 30V,

f = 1MHz

-- 3800 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

* Notes : Recommendation of RG Value : RG≥15Ω

Turn-On Delay Time
Rise Time -- 1.7 -- µs
Turn-Off Delay Time -- 0.3 0.5 µs
Fall Time -- 1.5 2.0 µs

= 300V, IC = 150A,

V

CC

= 4.5V, RG = 15Ω*

V

GE

Resistive Load

-- 0.2 -- µs

©2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Rev. A1

SGR20N40L / SGU20N40L

200

150

[A]

C

100

Collector Current, I

50

Common Emitter

℃

= 25

T

C

5.0V

4.5V

4.0V

3.5V

3.0V

VGE = 2.5V

7

Common Emitter
V

6

[v]

CE

5

4

3

= 4.5V

GE

150A

Collector-Emitter Voltage, V

0

02468

Collector-Emitter Voltage, VCE [V]

2

-50 0 50 100 150

Case Temperature, TC [℃]

Fig 1. Typical Output Characteristics Fig 2. Saturation Voltage vs. Case

Temperature at Variant Current Level

[V]

20

16

CE

12

Common Emitter

℃

= -40

T

C

[V]

20

16

GE

12

Common Emitter

℃

T

= 25

C

100A

IC = 70A

8

4

Collector-Emitter Voltage, V

0

0123456

IC = 70A

150A

100A

Gate-Emitter Voltage, VGE [V]

Fig 3. Saturation Voltage vs. V

20

Common Emitter

℃

= 125

T

C

16

[V]

CE

12

8

4

Collector-Emitter Voltage, V

0

0123456

GE

150A

100A

IC = 70A

Gate-Emitter Voltage, VGE [V]

8

150A

4

Gate-Emitter Voltage, V

0

0123456

100A

IC = 70A

Gate-Emitter Voltage, VGE [V]

Fig 4. Satur ation Voltage vs. VGE

10000

Cies

1000

100

Capacitance [pF]

10

0 10203040

Coes

Cres

Collector-Emitter Voltage, VCE [V]

Common Emitter

= 0V, f = 1MHz

V

GE

℃

= 25

T

C

Fig 5. Saturation Voltage vs. V

©2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Rev. A1

Fig 6. Capacitance Characteristics

GE

SGR20N40L / SGU20N40L

6

Common Emitter
V
T

[V]

GE

4

2

= 300V, RL = 2

CC

= 25

C

Ω

℃

Gate - Emitter Voltage, V

0

0 102030405060

Gate-Charge, Qg [nC]

Fig 7. Turn-On Characteristics vs.
Gate Resistance

200

175

150

[A]

CP

125

100

75

50

Collector Peak Current, I

25

0

0246810

Gate - Emitter Voltage, VGE [V]

Fig 8. Collector Current Limit vs.
Gate - Emitter Voltage Limit

©2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Rev. A1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

CEx™

A

Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™

2

CMOS™

E
EnSigna™
FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™

®

OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench

®

QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™

STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™

®

UltraFET
VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2001 Fairchild Semiconductor Corporation

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H3