Fairchild 2N7052, 2N7053, NZT7053 service manual
Discrete POWER & Signal
Technologies
2N7052 / 2N7053 / NZT7053
2N7052 NZT7053
C
B
E
TO-92
C
2N7053
B
E
TO-226
C
C
B
SOT-223
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 100 V
Collector-Base Voltage 100 V
Emitter-Base Voltage 12 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature Range -55 to +150
C
°
E
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N7052 2N7053 *NZT7053
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
ã 1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 125
Thermal Resistance, Junction to Ambient 200 50 125
625
5.0
2
.
1,000
8.0
1,000
8.0
mW
mW/°C
°C/W
°C/W
(BR)
(BR)
(BR)
µ
µ
µ
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CBO
I
CES
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitte r Breakdown Voltage* IC = 1.0 mA, IB = 0 100 V
Collector-Base Breakdown Voltag e
I
= 100 µA, IE = 0
C
100 V
Emitter-Base Breakdown Voltage IE = 1.0 mA, IC = 0 12 V
Collector-Cutoff Current VCB = 80 V, IE = 0 0.1
Collector-Cutoff Current VCE = 80 V, IE = 0 0.2
Emitter-Cutoff Current VEB = 7.0 V, IC = 0 0.1
DC Current Gain IC = 100 mA, VCE = 5.0 V
I
= 1.0 A, VCE = 5.0 V
Collector-Emitte r Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
)
C
10,000
1,000 20,000
Base-Emitter On Voltage IC = 100 mA, VBE = 5.0 V 2.0 V
A
A
A
2N7052 / 2N7053 / NZT7053
SMALL SIGNAL CHARACTERISTICS
F
T
C
cb
Transition Frequency IC = 100 mA, VCE = 5.0 V, 200 MHz
Collector-Base Capa citance VCB = 10 V,f = 1.0 MHz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
100
80
60
125 °C
40
20
0
0.001 0.01 0.1 1
FE
h - TYPICAL PULSED CURRENT GAIN (K)
I - COLLECTOR CURRENT (A)
C
25 °C
- 40°C
2N7052
2N7053
10
8.0
Collector-Emitter Saturation
V o l tag e vs Collector Current
2
= 1000
β
1.6
1.2
0.8
0.4
0
10 100 1000
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
25 °C
I - COLLECTOR CURRENT (mA)
- 40°C
125 °C
pF
Typical Characteristics (continued)
2N7052 / 2N7053 / NZT7053
NPN Darlington Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
2
β
= 1000
1.6
1.2
0.8
0.4
0
BESAT
V - BASE EMITTER VOLTAGE (V)
10 100 1000
- 40°C
25 °C
125 °C
I - COLLECTOR CURRENT (mA)
C
Collector-Cutoff Current
vs. Ambient Temperature
100
V = 80V
CB
10
1
0.1
CBO
0.01
I - COLLECTOR CURRENT (nA)
25 50 75 100 125
T - AMBIENT TEMPERATURE ( C)
A
º
Base Emitter ON Voltage vs
Collector Current
2
- 40°C
25 °C
125 °C
V = 5V
CE
10 100 1000
I - COLLECTOR CURRENT (mA)
C
BEON
V - BASE EMITTER ON VOLTAGE (V)
1.6
1.2
0.8
0.4
0
Junction Capacitance vs
Reverse Bias Voltage
100
10
JUNCTION CAPACITANCE (pF)
1
0.1 1 10 100
REVERSE BIAS VOLTAGE (V)
C
ib
C
cb
Typical Collector-Emitter Leakage
Current vs Temperature
1000
V = 80V
CE
V = 0
BE
100
10
1
CES
I - LEAKAGE CU RRENT (nA)
0.1
04080120160
T - JUNCTION TEMPERATURE ( C)
J
º
Power Dissipation vs
Ambi en t T emper ature
1
0.75
TO-92
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 255075100125150
SOT-223
TO-226
TEMPERATURE ( C)
o
Loading...