Fairchild TN6726A, NZT6726 service manual

TN6726A / NZT6726

TN6726A

C

B

E

TO-226

NZT6726

C

E

C

B

SOT-223

PNP General Purpose Amplifier

This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0 A.
Sourced from Process 77.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Collector-Emitter Voltage 30 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature Range -55 to +150

C

°

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

TN6726A *NZT6726

P

D

R

θ

JC

R

θ

JA

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

 1997 Fairchild Semiconductor Corporation

Total Devi ce Dissipat ion

Derate above 25°C

Thermal Resistance, Junction to Case 50
Thermal Resistance, Junction to Ambient 125 125

1.0

8.0

1.0

8.0

2

.

W

mW/°C

C/W

°

C/W

°

PNP General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

ON CHARACTERISTICS*

h

FE

V

sat

CE(

V

BE(on)

Collector-Emitter Breakdown

IC = 10 mA, IB = 0 30 V
Voltage
Collector-Base Breakdown Vol tage IC = 1.0 mA, IE = 0 40 V

Emitter-Base B reakdown Voltage

I

= 100 µA, IC = 0

E

5.0 V
Collector-Cutoff Current VCB = 40 V, IE = 0 0.1
Emitter-Cutoff Current VEB = 5.0 V, IC = 0 0.1

DC Current Gain IC = 10 mA, VCE = 1.0 V

= 100 mA, VCE = 1.0 V

I

C

= 1.0 A, VCE = 1.0 V

I

Collector-Emitter S aturation Voltage IC = 1.0 A, IB = 100 mA 0.5 V

)

C

55
60
50 250

Base-Emitter On Volt age IC = 1.0 A, VCE = 1.0 V 1.2 V

µ
µ

TN6726A / NZT6726

A
A

SMALL SIGNAL CHARACTERISTICS

h

fe

C

cb

Small-Signal Current Gain IC = 50 mA, VCE = 10 V,

f = 20 MHz

Collector-Base Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 30 pF

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

T ypical Characteristics

Typ i cal Puls ed Curr ent Gain

vs Collector Current

300

V = 5.0V

250

200

150

100

CE

125 °C

25 °C

- 40 °C

50

2.5 25

Colle cto r- Emitter Satu r ati on

V o lt age v s C o llec tor Cu rrent

1

= 10

β

0.8

0.6

0.4

0.2

- 40 °C

3

25 °C

125 °C

0

FE

0.01 0.1 1 2

h - TYPICAL PULSED CURRENT GAIN

I - COLLE C TOR CU RRE NT ( A)

C

0

0.01 0.1 1 3

CESAT

V - COLLECTOR-EMI TTER VOLTA GE (V)

I - COLLECTOR CURRENT (A)

C

Typical Characteristics (continued)

TN6726A / NZT6726

PNP General Purpose Amplifier

(continued)

Bas e-Emitter Satura tion

Voltage vs Collector Current

β

= 10

1

0.8

0.6

- 40 °C
25 °C

125 °C

0.4

BESAT

V - BASE-EMITTER VOLTAGE (V)

1 10 100 1000

I - COLL ECTOR CURRE NT (mA)

C

Collector-Cutoff Current

vs Ambient Temperature

100

V = 20V

CB

10

1

0.1

Base-Emitter ON V oltage vs

Collector Current

1

0.8

- 40 °C

0.6

0.4

0.2

BE(ON)

1 10 100 1000

V - BASE-E MITTER ON VOLTAGE (V)

I - COLLECTOR CURRENT (mA)

C

25 °C

125 °C

V = 5.0 V

CE

Collector-Base Capacitance

vs Collector-Base Voltage

40

30

20

10

f = 1.0 MHz

CBO

I - COLLECTOR CURRENT (nA)

25 50 75 100 125 150

T - AM BI E N T TE MPE RATUR E ( C)

A

°

Gain Bandwidth Product

vs Collecto r Curr en t

250

V = 10V

CE

200

150

100

50

0

T

1 10 100 1000

f - GAIN BANDWID T H PRO DU CT (M Hz)

I - COLLECTOR CURRENT (mA)

C

0

0102030

OBO

C - COLLECTOR-BASE CAPACITANCE (pF)

V - COLLECTOR-BA SE VOLTA GE ( V )

CB

Safe Operating Area TO-226 / SOT- 223

10

10

µ

1

*PULSED

0.1

OPERATION

T = 25 °C

A

C

I - COLLECTOR CURRENT (A)

0.01
110100

DC T = 25 °C

COLLEC TO R LEAD

DC T = 25 °C

AMBIENT

LIMIT DETERMINED

BY BV

V - COLLECTOR-EMITTER VOLTAGE (V)

CE

100

CEO

S*

µ

S*

1.0 ms*

Typical Characteristics (continued)

Power Dissipation vs

Amb ient Temp era t u re

1

TN6726A / NZT6726

PNP General Purpose Amplifier

(continued)

0.75

0.5

0.25

D

P - POWER DISSIPATION (W)

0

0 25 50 75 100 125 150

TO-226

SOT-223

TEMPER AT URE ( C)

o

3