Fairchild NZT660, NZT660A service manual
April 2005
NZT660/NZT660A
PNP Low Saturation Transistor
• These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
NZT660/NZT660A PNP Low Saturation Transistor
Absolute Maximum Ratings*
Ta=25°C unless o therwise noted
Symbol Parameter NZT660 NZT660A Units
V
CEO
V
CBO
V
EBO
I
C
T
, T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Collector-Emitter Voltage 60 60 V
Collector-Base Voltage 80 60 V
Emitter-Base Voltage 5 5 V
Collector Current - Continuous 3 3 A
Operating and Storage Junction Temperature Range - 55 ~ +150 - 55 ~ +150 °C
Ta = 25°C unless other wise not ed
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
On Characteristics *
h
FE
Collector-Emitter Breakdown Voltage IC = 10mA
Collector-Base Breakdown Voltage IC = 100µA NZT660
NZT660A
Emitter-Base Breakdown Voltage IE = 100µA
Collector-Base Cutoff Current VCB = 30V
= 30V, TA = 100°C
V
CB
Emitter-Base Cutoff Current VEB = 4V
DC Current Gain IC = 100mA, VCE = 2V
= 500mA, VCE = 2V NZT660
I
C
NZT660A
= 1A, VCE = 2V
I
C
= 3A, VCE = 2V
I
C
60 V
80
60
5V
70
100
250
80
25
100
10
100 nA
300
550
nA
µA
V
V
©2005 Fairchild Semiconductor Corporation
NZT660/NZT660A Rev. C3
1
www.fairchildsemi.com
NZT660/NZT660A PNP Low Saturation Transistor
Electrical Characteristics
Ta = 25°C unless other wise not ed (Continued)
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
CE(sat)
V
BE(sat)
V
BE(on)
Small Signal Characteristics
C
obo
f
T
* Pulse Test: Puls e Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Thermal Characteristics
Symbol Parameter NZT660/NZT660A
P
D
R
θJA
Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA
I
= 3A, IB = 300mA NZT660
C
NZT660A
Base-Emitter Saturation Voltage IC = 1A, IB = 100mA
Base-Emitter On Voltage IC = 1A, VCE = 2V
Output Capacitance VCB = 10V, IE = 0, f = 1MHz
Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz
75 MHz
Ta=25°C unless otherwise noted
Total Device Dissipation 2 W
Thermal Resistance, Junction to Ambient 62.5 °C/W
300
550
500
1.25 V
1V
45 pF
mV
mV
mV
Units
NZT660/NZT660A Rev. C3
2
www.fairchildsemi.com
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