Fairchild NZT651 service manual
NZT651
C
E
C
B
SOT-223
NPN Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4P.
NZT651
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 60 V
Collector-Base Voltage 80 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 4.0 A
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
*NZT 651
P
D
R
θ
JA
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Ambient 103
1.2
9.7
2
.
W
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
NPN Current Driver Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Sustaining Voltage IC = 10 mA, IB = 060V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 80 V
Em i t ter - Bas e B r e akdown Vol tage
Collector-Cutoff Current VCB = 80 V, I
Em i t ter - Cutoff C u r rent VEB = 4.0 V, I
= 100 µA, IC = 0
I
E
E
= 0 100 nA
= 0 0.1
C
DC Cu r re n t Ga in IC = 50 mA, VCE = 2.0 V
I
= 500 mA, VCE = 2.0 V
C
= 1.0 A, VCE = 2.0 V
I
C
= 2.0 A, VCE = 2.0 V
I
Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA
)
Base-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 1.2 V
)
C
= 2.0 A, I
I
C
= 200 mA
B
5.0 V
75
75
75
40
0.3
0.5
µ
A
V
V
Base-Emitter On Voltage IC = 1.0 A, VCE = 2.0 V 1.0 V
NZT651
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product IC = 50 mA, VCE = 5.0 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
DC Typical Characteristics
Ty pical Pulsed Current Gain
vs Collector Current
200
150
100
50
0
0.01 0.1 1 10
FE
h - TYPICAL PULSED CURRENT GAIN
125 °C
25 °C
I - COLLECTOR CURRENT (A)
C
- 40 ºC
V = 5V
CE
f = 10 0 M Hz
75 MHz
Collector-Emitter Saturation
Vo ltage vs Collector Current
3
ββ
= 10
2.5
2
1.5
1
0.5
0
0.01 0.1 1 10
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (A)
- 40 ºC
C
25 °C
125 °C
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