Fairchild NZT605 service manual
NZT605
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at collector
currents to 1.0A and high breakdown voltage.
• Sourced from process 06.
4
3
2
1
SOT-223
1. Base 2.4. Collector 3. Emitter
NZT605 NPN Darlington Transistor
January 2007
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
C
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics * T
Collector-Emitter Vo ltage 110 V
Collector-Base Voltage 140 V
Emitter-Base Voltage 10 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Max Units
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
On Characteristics *
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
Small Signal characteristics
f
T
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 110 V
Collector-Base Breakdown Voltage IC = 100µA, IE = 0 140 V
Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 10 V
Collector Cutoff Current VCB = 120V, IE = 0 10 nA
Collector Cutoff Current VCE = 120V, IE = 0 10 nA
Emitter Cut-off Current VEB = 8.0V, IC = 0 100 nA
DC Current Gain VCE = 5.0V, IC = 50mA
VCE = 5.0V, IC = 500mA
VCE = 5.0V, IC = 1.0A
VCE = 5.0V, IC = 1.5A
VCE = 5.0V, IC = 2.0A
Collector-Emitter Saturation Voltage IC = 250mA, IB = 0.25mA
IC = 1.0A, IB = 1.0mA
2000
5000
2000
300
200
100K
1
1.5
Base-Emitter Saturation Voltage IC = 1.0A, IB = 1.0mA 1.8 V
Base-Emitter On Voltage IC = 1.0A, VCE = 5.0V 1.7 V
Transition Freq ue nc y IC = 100mA, VCE = 10V, f = 20MHz 150 MHz
V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
NZT605 Rev. C
NZT605 NPN Darlington Transistor
Thermal Characteristics T
= 25°C unless otherwise noted
a
Symbol Parameter Max. Units
P
D
R
θJA
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
Total Device Dissipation
Derate above 25°C
1,000
8.0
Thermal Resistance, Junction to Ambient 125 °C/W
2
mW
mW/°C
NZT605 Rev. C
2 www.fairchildsemi.com
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