Fairchild NZT560A service manual

NZT560/NZT560A

1. Base 2. Collector 3. Emitter

1

2

2

3

NPN Low Saturation Transistor

Features

• These devices are designed with high current gain and low saturation voltage with
collector currents up to 3A continuous.

NZT560/NZT560A — NPN Low Saturation Transistor

May 2009

Absolute Maximum Ratings* T

=25°C unless otherwise noted

A

Symbol Parameter Ratings Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150°C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.

Thermal Characteristics T

Collector-Emitter Voltage 60 V

Collector-Base Voltage 80 V

Emitter-Base Voltage 5 V

Collector Current - Continuous 3 A

Operating and Storage Junction Temperature Range - 55 to +150 °C

=25°C unless otherwise noted

A

Max.

Symbol Parameter

Units

NZT560 NZT560A

P

D

R

θJA

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

NZT560/NZT560A Rev. D1 1

Total Device Dissipation 1 W

Thermal Resistance, Junction to Ambient 125 °C/W

NZT560/NZT560A — NPN Low Saturation Transistor

Electrical Characteristics T

=25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min. Max. Units

Off Characteristics

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

On Characteristics *

h

FE

VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA

VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA 1.25 V

VBE(on) Base-Emitter On Voltage IC = 1A, VCE = 2V 1 V

Collector-Emitter Breakdown Voltage IC = 10mA 60 V

Collector-Base Breakdown Voltage IC = 100µA 80 V

Emitter-Base Breakdown Voltage IE = 100µA 5 V

Collector Cutoff Current VCB = 30V

VCB = 30V, TA = 100°C

10010nA

µA

Emitter Cutoff Current VEB = 4V 100 nA

DC Current Gain IC = 100mA, VCE = 2V

IC = 500mA, VCE = 2V NZT560
NZT560A
IC = 1A, VCE = 2V
IC = 3A, VCE = 2V

IC = 3A, IB = 300mA NZT560
NZT560A

70
100
250

80

25

300
550

300
450
400

mV
mV
mV

Small Signal Characteristics

C

obo

f

T

Output Capacitance VCB = 10V, IE = 0, f = 1MHz 30 pF

Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz 75 MHz

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

NZT560/NZT560A Rev. D1 2