Fairchild NDS9955 service manual

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May 1998

NDS9955
Dual N-Channel Enhancement Mode Field Effect Transistor

General Description Features

SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These
devices are particularly suited for low voltage applications
such as disk drive motor control, battery powered circuits
where fast switching, low in-line power loss, and resistance
to transients are needed.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

D2

D2

D1

D1

NDS

9955

G2

S2

SO-8

pin

G1

1

S1

3.0 A, 50 V. R
R

High density cell design for extremely low R
High power and current handling capability in a widely

used surface mount package.
Dual MOSFET in surface mount package.

SO-8 SOT-223

5
6

7

8

= 0.130 Ω @ VGS = 10 V,

DS(ON)

= 0.200 Ω @ VGS = 4.5 V.

DS(ON)

DS(ON)

SOIC-16

4

3
2

1

.

Absolute Maximum Ratings T

Symbol Parameter NDS9955 Units

V

DSS

V

GSS

I

D

P

D

TJ,T

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

© 1998 Fairchild Semiconductor Corporation

Drain-Source Voltage 50 V
Gate-Source Voltage ± 20 V
Drain Current - Continuous (Note 1a) 3 A

- Pulsed 10
Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1

(Note 1c) 0.9
Operating and Storage Temperature Range -55 to 150 °C

STG

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

= 25oC unless other wise noted

A

NDS9955 Rev.A

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSSF

I

GSSR

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 50 V
Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

ID = 250 µA, Referenced to 25 oC
VDS = 40 V, V

GS

= 0 V

60

2 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, V

DS

= 0 V

mV/ oC

-100 nA

ON CHARACTERISTICS (Note 2)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.7 3 V

TJ =125°C

0.7 2.2

Static Drain-Source On-Resistance VGS = 10 V, I D = 3 A 0.076 0.13

TJ =125°C

0.124 0.2

Ω

VGS = 4.5 V, I D = 1.5 A 0.103 0.2

0.166 0.3

5.3 S

I
g

D(ON)

FS

TJ =125°C
On-State Drain Current VGS = 10 V, VDS = 10 V 10 A
Forward Transconductance

VDS = 10 V, I D = 3 A

DYNAMIC CH ARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance 110 pF

f = 1.0 MHz

345 pF

Reverse Transfer Capacitance 25 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

Turn - On Delay Time
Turn - On Rise Time

V

= 25 V, I D = 1 A

DS

VGS = 10 V , R

GEN

= 6 Ω

Turn - Off Delay Time 20 70
Turn - Off Fall Time 7 5

g

gs

gd

Total Gate Charge VDS = 25 V, I D = 2 A, 12.9 30 nC
Gate-Source Charge

VGS = 10 V

Gate-Drain Charge 3.2

5 20 ns

7.5 20

1.7

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

t

rr

I

rr

Notes:

1. R
design while R

JA

θ

Maximum Continuous Drain-Source Diode Forward Current 1.3 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current 1.5 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

VGS = 0 V, I S = 1.3 A

(Note 2)

VGS = 0 V, IF = 1.3 A,
dIF/dt = 100 A/µs

0.8 1.2 V
40 ns

is guaranteed by

JC

θ

a. 78OC/W on a 0.5 in

pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

2

b. 125OC/W on a 0.02 in

pad of 2oz copper.

2

c. 135OC/W on a 0.003 in

pad of 2oz copper.

2

NDS9955 Rev.A

Typical Electrical Characteristics

20

15

10

V = 10V

GS 6.0V

5.0V

4.5V

4.0V

3.5V

5

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

2

I = 3.0A

D

1.8

V = 10V

GS

1.6

1.4

1.2
1

DS(ON)

0.8

R , NORMALIZED

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

3.0V

DS(ON)

R , NORMALIZED

2.5

V = 3.0V

GS

2.25

2

1.75

1.5

1.25

1

DRAIN-SOURCE ON-RESISTANCE

0.75
0 2 4 6 8 10

3.5 V

4.0 V

4.5 V

I , DRAIN CURRENT (A)

D

5.0V

6.0V
10V

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.4

0.3

0.2

0.1

DS(ON)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

V , GATE TO SOURCE VOLTAGE (V)

GS

T =125°C

A

T =25°C

A

I = 2A

D

Figure 3. On-Resistance Variation With

Temperature.

10

V = 5V

DS

8

6

4

D

I , DRAIN CURRENT (A)

2

0

1 1.5 2 2.5 3 3.5 4 4.5 5

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5 . Transfer Characteristics.

T = -55°C

J

25°C

125°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

V = 0V

GS

5
3

2

1

0.5

0.3

0.2

S

I , REVERSE DRAIN CURRENT (A)

0.1

0.4 0.6 0.8 1 1.2

T = 125°C

J

25°C

-55°C

V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

NDS9955 Rev.A