Fairchild NDS9948 service manual
NDS9948
January 2010
NDS9948
Dual 60V P-Channel PowerTrench
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been opt imized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
D1
D
D1
D
D2
D
D2
D
SO-8
Pin 1
SO-8
S2
S1
G2
S
S
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
Drain-Source Voltage –60 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –2.3 A
– Pulsed –10
PD
TJ, T
STG
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
MOSFET
G1
G
S
o
=25
C unless otherwise noted
A
Features
• –2.3 A, –60 V R
R
• Low gate charge (9nC typical)
• Fast switching speed
• High performance trench technology for extremely
DS(ON)
5
6
7
8
low R
• High power and current handling capability
= 250 mΩ @ VGS = –10 V
DS(ON)
= 500 mΩ @ VGS = –4.5 V
DS(ON)
4
Q1
Q2
3
2
1
±20
1.0
(Note 1c)
0.9
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1c)
(Note 1) 40
135
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
NDS9948 NDS9948 13’’ 12mm 2500 units
2010 Fairchild Semiconductor Corporation
°C/W
°C/W
°C/W
NDS9948 Rev B1(W)
NDS9948
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Si ngle Pulse, VDD=–54 V 15 mJ
DSS
IAR Drain-Source Avalanche Current
–10
A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
= 0 V, ID = –250 µA
V
GS
= –250 µA, Referenced to25°C
I
D
= –40 V, VGS = 0 V
V
DS
= –40 V,VGS = 0 V TJ =–55°C
V
DS
–60 V
–52
–2
–25
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –10 V, VDS = –5 V –10 A
D(on)
= VGS, ID = –250 µA
V
DS
= –250 µA, Referenced to25°C
I
D
VGS = –10 V, ID = –2.3 A
= –4.5 V, ID = –1.6 A
V
GS
V
= –10 V,ID = –2.3A, TJ =125°C
GS
gFS Forward Transconductance VDS = –10 V, ID = –2.3 A 5 S
–1 –1.5 –3 V
4
138
175
225
250
500
433
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 394 pF
iss
C
Output Capacitance 53 pF
oss
C
Reverse Transfer Capacitance
rss
= –30 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
23 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 6 12 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 16 29 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 9 13 nC
Qgs Gate–Source Charge 1.4 nC
Qgd Gate–Drain Charge
V
= –30 V, ID = –1 A,
DD
= –10 V, R
V
GS
V
= –30 V, ID = –2.3 A,
DS
V
= –10 V
GS
GEN
= 6 Ω
3 6 ns
1.7 nC
NDS9948 Rev B1(W)
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