Fairchild NDS9407 service manual
May 2002
NDS9407
60V P-Channel PowerTrench
MOSFET
NDS9407
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been opt imized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Power management
• Load switch
• Battery protection
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• –3.0 A, –60 V. R
R
• Low gate charge
• Fast switching speed
• High performance trench te chnology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 150 mΩ @ VGS = –10 V
DS(ON)
= 240 mΩ @ VGS = –4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage –60 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –3.0 A
– Pulsed –12
PD
TJ, T
STG
Maximum Power Dissipation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 t o +175
(Note 1c)
±20
1.2
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1c)
(Note 1) 25
125
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2002 Fairchild Semiconductor Corporation
NDS9407 NDS9407 13’’ 12mm 2500 units
°C/W
NDS9407 Rev B1(W)
NDS9407
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
= 0 V, ID = –250 µA
V
GS
I
= –250 µA, Referenced to 25°C
D
= –48 V, VGS = 0 V
V
DS
= –48 V, VGS = 0V, TJ = 55°C
V
DS
–60 V
–45
–1
–10
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –10 V, VDS = –5 V –12 A
D(on)
= VGS, ID = –250 µA
V
DS
= –250 µA, Referenced to 25°C
I
D
VGS = –10 V, ID = –3.0 A
= –4.5 V, ID = –1.6 A
V
GS
= –10 V, ID = –3.0 A, TJ =125°C
V
GS
gFS Forward Transconductance VDS = –15 V, ID = –3.0 A 8 S
–1 –1.6 –3 V
4
78
99
122
150
240
250
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 732 pF
iss
C
Output Capacitance 86 pF
oss
C
Reverse Transfer Capacitance
rss
= –30 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
38 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 8 16 ns
d(on)
tr Turn–On Rise Time 11 20 ns
t
Turn–Off Delay Time 10 20 ns
d(off)
tf Turn–Off Fall Time
trr Diode Reverse Recovery Time 24 nS
Qrr Diode Reverse Recovery Charge
Qg Total Gate Charge 16 22 nC
Qgs Gate–Source Charge 2.2 nC
Qgd Gate–Drain Charge
= –30 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
I
= –3.0 A,
F
= 100 A/µs
d
iF/dt
= –30 V, ID = –3.0 A,
V
DS
V
= –10 V
GS
GEN
= 6 Ω
10 20 ns
66 nC
3.3 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
θCA
VGS = 0 V, IS = –2.1 A (Note 2) –0.8 –1.2 V
is determined by the user's board design.
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDS9407 Rev B1(W)
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