Fairchild NDS8425 service manual

NDS8425

Single N-Channel, 2.5V Specified PowerTrench



MOSFET

NDS8425

January 2001

General Description

This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize on-state resistance and yet maintain l ow gate
charge for superior switching performance.

These devices have been designed to offer exceptional
power dissipation in a very small footprint package.

Applications

• DC/DC converter

• Load switch

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings T

S

S

=25oC unless otherwise noted

A

Features

• 7.4 A, 20 V. R

• Fast switching speed

• Low gate charge (11nC typical)

• High performance trench technology for extremely low

R

DS(ON)

• High power and current handling capability in a widely
used surface mount package

5
6
7
8

= 0.022 Ω @ VGS = 4.5 V

DS(ON)

= 0.028 Ω @ VGS = 2.7 V

R

DS(ON)

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a)

– Pulsed

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range -55 to +150

±8

±7.4

±20

1.2
1

V
A

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

NDS8425 NDS8425 13’’ 12mm 2500 units

2001 Fairchild Semiconductor International

°C/W
°C/W

NDS8425 Rev D (W)

NDS8425

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current

= 0 V, ID = 250µA

V

GS

I

= 250 µA, Referenced to 25°C

D

= 16 V, VGS = 0 V

V

DS

= 16 V,VGS = 0 V, TJ=55°C

V

DS

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

20 V

14

mV/°C

1

10

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 4.5 V, ID = 7.4 A

= 4.5 V, ID = 7.4 A, TJ=125°C

V

GS

=2.7 V, ID =7.2A

V

GS

On–State Drain Current VGS = 4.5 V, VDS = 5 V 20 A
Forward Transconductance VDS = 5 V, ID = 7.4 A 31 S

0.40.891.5 V

-3

15
21
19

22
31
28

mV/°C

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1098 pF
Output Capacitance 240 pF
Reverse Transfer Capacitance

= 15 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

115 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 9 18 ns
Turn–On Rise Time 13 24 ns

= 15 V, ID = 1 A,

V

DS

= 4.5 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 26 42 ns
Turn–Off Fall Time
Total Gate Charge 11 18 nC
Gate–Source Charge 2.5 nC

V

= 10 V, ID = 7.4 A,

DS

= 4.5 V

V

GS

Gate–Drain Charge

11 20 ns

3.1 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current 1.9 A
Drain–Source Diode Forward

VGS = 0 V, IS = 1.9 A (Note 2) 0.72 1.3 V

Voltage

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

µA

a) 50°/W when

mounted on a 1 in
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2

b) 105°/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°/W when mounted on a

minimum pad.

NDS8425 Rev D (W)