Fairchild 2N7000, 2N7002, NDS7002A service manual
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
November 1995
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
High density cell design for low R
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
DS(ON)
.
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
___________________________________________________________________________________________
D
G
S
TO-92
2N7000
Absolute Maximum Ratings T
Symbol Parameter
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J,TSTG
T
L
THERMAL CHARACTERISTICS
R
JA
θ
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
Maximum Drain Current - Continuous 200 115 280 mA
- Pulsed 500 800 1500
Maximum Power Dissipation 400 200 300 mW
o
Derated above 25
Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W
C 3.2 1.6 2.4 mW/°C
(TO-236AB)
2N7002/NDS7002A
= 25°C unless otherwise noted
A
G
2N7000 2N7002 NDS7002A
60 V
±20
±40
300 °C
D
S
Units
V
© 1997 Fairchild Semiconductor Corporation
2N7000.SAM Rev. A1
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA
DSS
Zero Gate Voltage Drain Current VDS = 48 V, V
GS
= 0 V
All
2N7000
60 V
1 µA
TJ=125°C 1 mA
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
1 µA
10 nA
100 nA
-10 nA
-100 nA
I
GSSF
I
GSSR
VDS = 60 V, V
GS
= 0 V
Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
TJ=125°C 0.5 mA
ON CHARACTERISTICS (Note 1)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage V
= V
, I
GS
, I
GS
= 1 mA
D
= 250 µA
D
DS
V
= V
DS
Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA
2N7000
2N7002
NDS7002A
2N7000
0.8 2.1 3 V
1 2.1 2.5
1.2 5
Ω
TJ =125°C 1.9 9
VGS = 4.5 V, ID = 75 mA 1.8 5.3
VGS = 10 V, ID = 500 mA
2N7002
1.2 7.5
TJ =100°C 1.7 13.5
VGS = 5.0 V, ID = 50 mA 1.7 7.5
TJ =100C 2.4 13.5
VGS = 10 V, ID = 500 mA NDS7002A 1.2 2
TJ =125°C 2 3.5
VGS = 5.0 V, ID = 50 mA 1.7 3
TJ =125°C 2.8 5
V
DS(ON)
Drain-Source On-Voltage VGS = 10 V, ID = 500 mA
2N7000
0.6 2.5 V
VGS = 4.5 V, ID = 75 mA 0.14 0.4
VGS = 10 V, ID = 500mA
2N7002
0.6 3.75
VGS = 5.0 V, ID = 50 mA 0.09 1.5
VGS = 10 V, ID = 500mA
NDS7002A
0.6 1
VGS = 5.0 V, ID = 50 mA 0.09 0.15
2N7000.SAM Rev. A1
Electrical Characteristics T
= 25oC unless otherwise noted
A
Symbol Parameter Conditions Type Min Typ Max Units
ON CHARACTERISTICS Continued (Note 1)
I
D(ON)
g
On-State Drain Current VGS = 4.5 V, VDS = 10 V
VGS = 10 V, VDS > 2 V
VGS = 10 V, VDS > 2 V
FS
Forward Transconductance VDS = 10 V, ID = 200 mA
VDS > 2 V
VDS > 2 V
DS(on)
DS(on)
DS(on)
DS(on)
, ID = 200 mA
, ID = 200 mA
2N7000
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
75 600 mA
500 2700
500 2700
100 320 mS
80 320
80 320
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
on
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Turn-On Time
VDD = 15 V, RL = 25 Ω,
All
All
All
2N7000
20 50 pF
11 25 pF
4 5 pF
10 ns
ID = 500 mA, VGS = 10 V,
R
= 25
GEN
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
R
= 25 Ω
GEN
t
off
Turn-Off Time
VDD = 15 V, RL = 25 Ω,
2N700
NDS7002A
2N7000
20
10 ns
ID = 500 mA, VGS = 10 V,
R
= 25
GEN
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
R
= 25 Ω
GEN
2N700
NDS7002A
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 115 mA (Note 1)
VGS = 0 V, IS = 400 mA (Note 1) NDS7002A 0.88 1.2
2N7002
NDS7002A
2N7002
NDS7002A
2N7002
115 mA
280
0.8 A
1.5
0.88 1.5 V
2N7000.SAM Rev. A1
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