NDS351AN
NDS351AN
N-Channel, Logic Level, PowerTrench MOSFET
June 2003
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
D
S
SuperSOT -3
TM
G
Features
• 1.4 A, 30 V. R
• Ultra-Low gate charge
• Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities
• High performance trench technology for extremely
low RDS(ON)
= 160 mΩ @ VGS = 10 V
DS(ON)
R
= 250 mΩ @ VGS = 4.5 V
DS(ON)
D
G
S
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 1.4 A
– Pulsed 10
Power Dissipation for Single Operation (Note 1a) 0.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
± 20
0.46
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
351A NDS351AN 7’’ 8mm 3000 units
2003 Fairchild Semiconductor Corporation
NDS351AN Rev E(W)
V
W
°C
Electrical Characteristics T
GS
NDS351AN
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = 250 µA
ID = 250 µA,Referenced to 25°C
30 V
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
VDS = 24 V, VGS = 0 V, TJ = 55°C
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V ±100
26
10
mV/°C
µA
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 10 V, ID = 1.4 A
VGS = 4.5 V, ID = 1.2 A
V
= 10 V, ID = 1.4 A, TJ = 125°C
0.8 2.1 3 V
–4
92
120
114
On–State Drain Current VGS = 4.5V, VDS = 5 V 3.5 A
Forward Transconductance VDS = 5 V, ID = 1.4 A 4 S
160
250
214
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 145 pF
Output Capacitance 35 pF
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, V
GS
= 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
15 pF
1.6
Ω
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 3 6 ns
Turn–On Rise Time 8 16 ns
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
Turn–Off Delay Time 16 29 ns
Turn–Off Fall Time
Total Gate Charge 1.3 1.8 nC
Gate–Source Charge 0.5 nC
VDS = 15 V, ID = 1.4 A,
VGS = 4.5 V
Gate–Drain Charge
2 4 ns
0.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current 0.42 A
Drain–Source Diode Forward
VGS = 0 V, IS = 0.42 A (Note 2) 0.8 1.2 V
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 1.4 A, diF/dt = 100 A/µs 11 nS
4 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
is guaranteed by design while R
θJC
a) 250°C/W when mounted on a
2
0.02 in
pad of 2 oz. copper.
is determined by the user's board design.
θCA
b) 270°C/W when mounted on a
minimum pad.
NDS351AN Rev E(W)
Typical Characteristics
, ON-RESISTANCE (OHM)
, DRAIN CURRENT (A)
NDS351AN
5
VGS = 10V
6.0V
4
3
2
, DRAIN CURRENT (A)
D
I
1
0
0 0.5 1 1.5 2
4.5V
3.5V
3.0V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
2.8
2.6
2.4
VGS = 3.5V
2.2
2
1.8
, NORMALIZED
1.6
1.4
DS(ON)
R
1.2
DRAIN-SOURCE ON-RESISTANCE
1
0.8
0 1 2 3 4 5
4.0V
4.5V
ID, DRAIN CURRENT (A)
Drain Current and Gate Voltage.
5.0V
6.0V
10V
1.6
ID = 1.4A
VGS = 10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
5
VDS = 5V
4
3
2
D
I
1
0
2 2.5 3 3.5 4
TA = 125oC
25oC
-55oC
VGS, GATE TO SOURCE VOLTAGE (V)
0.25
0.225
0.2
0.175
0.15
0.125
DS(ON)
0.1
R
TA = 25oC
0.075
3 4 5 6 7 8 9 10
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
ID = 0.7A
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS351AN Rev E(W)
Typical Characteristics
100µs
P(pk), PEAK TRANSIENT POWER (W)
r(t), NORMALIZED EFFECTIVE TRANSIENT
P(pk)
0.05
0.1
NDS351AN
10
ID =1.4A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 0.5 1 1.5 2 2.5 3
Qg, GATE CHARGE (nC)
VDS = 10V
20V
15V
200
180
160
140
120
100
80
60
CAPACITANCE (pF)
40
20
0
0 5 10 15 20 25 30
C
ISS
C
OSS
C
RSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
10
R
LIMIT
DS(ON)
1
VGS = 10V
SINGLE PULSE
, DRAIN CURRENT (A)
0.1
D
I
R
= 270oC/W
θ
JA
TA = 25oC
0.01
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
1s
DC
100ms
1ms
10ms
5
4
3
2
1
0
0.01 0.1 1 10 100 1000
t1, TIME (sec)
f = 1 MHz
VGS = 0 V
SINGLE PULSE
R
= 270°C/W
θ
JA
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
R
(t) = r(t) * R
θJA
R
JA
θ
= 270oC/W
0.1
t
0.02
0.01
THERMAL RESISTANCE
0.01
SINGLE PULSE
1
t
2
TJ - TA = P * R
Duty Cycle, D = t1 / t
θJA
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
NDS351AN Rev E(W)
θJA
(t)
2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
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As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
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