Fairchild NDP710A, NDP710AE, NDP710B, NDP710BE, NDB710A service manual

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NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor

General Description Features

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

_____________________________________________________________________

42 and 40A, 100V. R

= 0.038 and 0.042Ω.

DS(ON)

Critical DC electrical parameters specified at elevated temperature.

Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely

low R

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

May 1994

Absolute Maximum Ratings T

Symbol Parameter

V V V

I

P

TJ,T T

DSS

DGR

GSS

D

L

Drain-Source Voltage 100 V Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous ±20 V

- Nonrepetitive (tP < 50 µs)

Drain Current - Continuous 42 40 A

- Pulsed 168 160 A Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Temperature Range -65 to 175 °C

STG

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

= 25°C unless otherwise noted

C

NDP710A NDP710AE NDB710A NDB710AE

D

G

S

NDP710B NDP710BE NDB710B NDB710BE Units

100 V

±40 V

150 W

1

W/°C

275 °C

NDP710.SAM

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Type Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

E

AS

I

AR

Single Pulse Drain-Source Avalanche Energy

Maximum Drain-Source Avalanche Current 42 A

VDD = 25 V, ID = 42 A NDP710AE

NDP710BE NDB710AE NDB710BE

700 mJ

OFF CHARACTERISTICS

BV

Drain-Source Breakdown

DSS

VGS = 0 V, ID = 250 µA

ALL 100 V

Voltage

I

DSS

I

GSSF

I

GSSR

Zero Gate Voltage Drain Current

VDS = 100 V, V

= 0 V

GS

TJ = 125°C

ALL 250 µA

1 mA Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V ALL 100 nA Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

ALL -100 nA

ON CHARACTERISTICS (Note 2)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage

Static Drain-Source On-Resistance

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 21 A

TJ = 125°C

ALL 2 2.9 4 V

1.4 2.2 3.6 V

NDP710A

0.026 0.038

NDP710AE

NDB710A

0.044 0.08

0.042

VGS = 10 V, ID = 20 A

TJ = 125°C

NDB710AE

NDP710B

NDP710BE

NDB710B

0.09

I

D(on)

TJ = 125°C

NDB710BE

On-State Drain Current VGS = 10 V, VDS = 10 V NDP710A

42 A

NDP710AE

NDB710A

NDB710AE

NDP710B

40 A

NDP710BE

NDB710B

NDB710BE

g

FS

Forward Transconductance VDS = 10 V, ID = 21 A ALL 20 28 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V, Output Capacitance ALL 550 700 pF

f = 1.0 MHz

Reverse Transfer Capacitance ALL 175 200 pF

ALL 2840 3600 pF

Ω

Ω Ω

Ω

NDP710.SAM

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Type Min Typ Max Units SWITCHING CHARACTERISTICS (Note 2)

t

D(ON)

t

r

t

D(OFF)

t

f

Q Q Q

g

gs

gd

Turn - On Delay Time VDD = 50 V, ID = 42 A, Turn - On Rise Time ALL 111 180 nS

VGS = 10 V, R

GEN

= 5 Ω

ALL 15 25 nS

Turn - Off Delay Time ALL 55 90 nS Turn - Off Fall Time ALL 81 130 nS

Total Gate Charge VDS = 80 V, Gate-Source Charge ALL 15 nC

ID = 42 A, VGS = 10V

ALL 92 130 nC

Gate-Drain Charge ALL 44 nC

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

Maximum Continuos Drain-Source Diode Forward Current NDP710A

42 A

NDP710AE

NDB710A

NDB710AE

NDP710B

40 A

NDP710BE

NDB710B

NDB710BE

ISM Maximum Pulsed Drain-Source Diode Forward Current NDP710A

168 A

NDP710AE

NDB710A

NDB710AE

NDP710B

160 A

NDP710BE

NDB710B

NDB710BE

V

SD

(Note 2)

t

rr

I

rr

Drain-Source Diode Forward Voltage

Reverse Recovery Time VGS = 0 V, IS = 42 A, Reverse Recovery Current ALL 8.7 13 A

VGS = 0 V, IS = 21 A

dIS/dt = 100 A/µs

ALL 0.89 1.3 V

TJ = 125°C 0.69 1.2 V

ALL 128 180 ns

THERMAL CHARACTERISTICS

R

JC

θ

R

JA

θ

Notes:

1. NDP710A/710B and NDB710A/710B are not rated for operation in avalanche mode.

2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Thermal Resistance, Junction-to-Case ALL 1 Thermal Resistance, Junction-to-Ambient ALL 62.5

°C/W °C/W

NDP710.SAM

Typical Electrical Characteristics

120

100

80

60

40

20

D

I , DRAIN-SOURCE CURRENT (A)

0

0 2 4 6 8

V = 20V

GS

12

10

8.0

7.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

6.0

5.0

2.5

V = 5V

GS

2

1.5

R , NORMALIZEDDS(on)

1

DRAIN-SOURCE ON-RESISTANCE

0.5 0 20 40 60 80 100 120

6.0

I , DRAIN CURRENT (A)

D

7.0

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Gate Voltage and Drain Current.

2.5

I = 15A

D

V = 10V

GS

2

1.5

DS(ON)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

2.5

1.5

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5

V = 10V

GS

2

1

0 20 40 60 80 100 120

T = 125°C

J

I , DRAIN CURRENT (A)

D

8.0 10

12

20

25°C

-55°C

Figure 3. On-Resistance Variation

with Temperature.

60

50

40

30

20

D

I , DRAIN CURRENT (A)

10

V = 10V

DS

0

2 3 4 5 6 7

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25

125

Figure 4. On-Resistance Variation with

Drain Current and Temperature.

1.2

1.1

1

0.9

0.8

th

V , NORMALIZED

0.7

0.6

GATE-SOURCE THRESHOLD VOLTAGE (V)

0.5

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation

with Temperature.

V = V

DS GS

I = 250µA

D

NDP710.SAM

Pulse Width

Typical Electrical Characteristics (continued)

1.15

I = 250µA

D

1.1

1.05

1

DSS

BV , NORMALIZED

0.95

0.9

DRAIN-SOURCE BREAKDOWN VOLTAGE (V)

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage

Variation with Temperature.

6000

3000 2000

1000

CAPACITANCE (pF)

300 200

100

f = 1 MHz V = 0V

GS

0.1 0.2 0.5 1 2 5 10 20 50 V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

iss

oss

rss

30

V = 0V

GS

10

1

0.1

S

I , REVERSE DRAIN CURRENT (A)

0.01

0.2 0.4 0.6 0.8 1 1.2 1.4

T = 125°C

J

25°C

-55°C

V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature.

20

I = 42A

D

15

10

5

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 40 80 120 160

Q , GATE CHARGE (nC)

g

V = 20V

DS

50

80

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

in

10%

out

t

on

10%

50%

r

t

90%

t

d(off)

V

DD

t

d(on)

V

IN

V

GS

R

GEN

G

R

L

D

V

OUT

DUT

Input, V

S

50%

90%

t

10%

off

90%

Figure 36. Switching Test Circuit. Figure 12. Switching Waveforms.

t

f

Inverted

NDP710.SAM

Typical Electrical Characteristics (continued)

50

V = 10V

DS

40

30

20

10

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

0 10 20 30 40 50 60

T = -55°C

J

25°C

125°C

I , DRAIN CURRENT (A)

D

V = 10V

GS

t is adjusted to reach

p

t

p

the desired peak inductive current, I .

L

t

p

I

L

BV

DSS

L

+

V

DD

-

V

DD

Figure 13. Transconductance Variation

with Drain Current and Temperature.

300

100

RDS(ON) Limit

50

10ms

10

5

V = 20V

D

I , DRAIN CURRENT (A)

2 1

0.5

GS

SINGLE PULSE

T = 25°C

C

1 2 3 5 10 20 50 100 150

V , DRAIN-SOURCE VOLTAGE (V))

DS

100ms DC

10µs

100µs

1ms

Figure 14. Unclamped Inductive Load

Circuit and Waveforms.

Figure 15. Maximum Safe Operating Area.

1

0.5

0.3

0.2

0.1

0.05

0.03

0.02

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

t ,TIME (ms)

1

R (t) = r(t) * R

JC

θ

R = 1.0 °C/W

JC

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

C

Duty Cycle, D = t /t

JC

θ

JC

1 2

Figure 16. Transient Thermal Response Curve.

NDP710.SAM

Fairchild NDP710A, NDP710AE, NDP710B, NDP710BE, NDB710A service manual

Specifications and Main Features

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