Fairchild NDP710A, NDP710AE, NDP710B, NDP710BE, NDB710A service manual

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NDP710A / NDP710AE / NDP710B / NDP710BE
NDB710A / NDB710AE / NDB710B / NDB710BE
N-Channel Enhancement Mode Field Effect Transistor

General Description Features

These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.

_____________________________________________________________________

42 and 40A, 100V. R

= 0.038 and 0.042Ω.

DS(ON)

Critical DC electrical parameters specified at
elevated temperature.

Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.

175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely

low R

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.

May 1994

Absolute Maximum Ratings T

Symbol Parameter

V
V
V

I

P

TJ,T
T

DSS

DGR

GSS

D

D

L

Drain-Source Voltage 100 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±20 V

- Nonrepetitive (tP < 50 µs)

Drain Current - Continuous 42 40 A

- Pulsed 168 160 A
Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Temperature Range -65 to 175 °C

STG

Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds

= 25°C unless otherwise noted

C

NDP710A NDP710AE
NDB710A NDB710AE

D

G

S

NDP710B NDP710BE
NDB710B NDB710BE Units

100 V

±40 V

150 W

1

W/°C

275 °C

© 1997 Fairchild Semiconductor Corporation

NDP710.SAM

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Type Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

E

AS

I

AR

Single Pulse Drain-Source
Avalanche Energy

Maximum Drain-Source Avalanche Current 42 A

VDD = 25 V, ID = 42 A NDP710AE

NDP710BE
NDB710AE
NDB710BE

700 mJ

OFF CHARACTERISTICS

BV

Drain-Source Breakdown

DSS

VGS = 0 V, ID = 250 µA

ALL 100 V

Voltage

I

DSS

I

GSSF

I

GSSR

Zero Gate Voltage Drain
Current

VDS = 100 V,
V

= 0 V

GS

TJ = 125°C

ALL 250 µA

1 mA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V ALL 100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

ALL -100 nA

ON CHARACTERISTICS (Note 2)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

VDS = VGS,
ID = 250 µA

VGS = 10 V,
ID = 21 A

TJ = 125°C

ALL 2 2.9 4 V

1.4 2.2 3.6 V

NDP710A

0.026 0.038

NDP710AE

NDB710A

0.044 0.08

0.042

VGS = 10 V,
ID = 20 A

TJ = 125°C

NDB710AE

NDP710B

NDP710BE

NDB710B

0.09

I

D(on)

TJ = 125°C

NDB710BE

On-State Drain Current VGS = 10 V, VDS = 10 V NDP710A

42 A

NDP710AE

NDB710A

NDB710AE

NDP710B

40 A

NDP710BE

NDB710B

NDB710BE

g

FS

Forward Transconductance VDS = 10 V, ID = 21 A ALL 20 28 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance ALL 550 700 pF

f = 1.0 MHz

Reverse Transfer Capacitance ALL 175 200 pF

ALL 2840 3600 pF

Ω

Ω
Ω

Ω

NDP710.SAM