Datasheet MMBT3906, PZT3906, 2N3906 Datasheet (Fairchild) [ru]

2N3906 / MMBT3906 / PZT3906
2N3906
MMBT3906
PZT3906
EBC
TO-92 SOT-23 SOT-223
Mark:2A
C
B
E
E
B
C
C
PNP General Purpose Amplifier
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
September 2013
Description
This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.
Ordering Information
2N3906BU 2N3906 TO-92 Bulk 10000
2N3906TA 2N3906 TO-92 Ammo 2000
2N3906TAR 2N3906 TO-92 Ammo 2000
2N3906TF 2N3906 TO-92 Tape and Reel 2000
2N3906TFR 2N3906 TO-92 Tape and Reel 2000
MMBT3906 2A SOT-23 Tape and Reel 3000
PZT3906 3906 SOT-223 Tape and Reel 2500
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1 1
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera­ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi­tion, extended exposure to stresses above the recommended operating cond itions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T
= 25°C unless otherwise noted.
A
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
Note:
1. These ratings are based on a maximum junction temperature of 150 °C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Collector-Emitter Voltage -40 V Collector-Base Voltage -40 V Emitter-Base Voltage -5.0 V Collector Current - Continuous -200 mA Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics
V a lues are at TA = 25°C unless otherwise noted.
Symbol Parameter
P
D
R
θJC
R
θJA
Total Device Dissipation 625 350 1,000 mW Derate above 25°C5.02.88.0mW/°C Thermal Resistance, Junction to Case 83.3 °C/W Thermal Resistance, Junction to Ambient 200 357 125 °C/W
2N3906 MMBT3906
Notes:
2. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
3. Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead minimum 6 cm
Max.
(2)
PZT3906
(3)
Units
2
.
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1 2
Electrical Characteristics
V a lues are at TA = 25°C unless otherwise noted.
Symbol
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF Noise Figure
SWITCHING CHARACTERISTICS
t
d
t
t
s
t
Note:
4. Pulse Test: Pulse Width 300μs, Duty Cycle ≤ 2.0%.
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Base Cutoff Current VCE = -30 V, VBE = 3.0 V -50 nA Collector Cutoff Current VCE = -30 V, VBE = 3.0 V -50 nA
DC Current Gain
Collector-Emitter Saturation Volt­age
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time Rise Time 35 ns
r
Storage Time Fall Time 75 ns
f
Parameter Test Condition Min. Max. Units
(4)
(4)
IC = -1.0 mA, IB = 0 -40 V
IC = -0.1 mA, VCE = -1.0 V 60 I
= -1.0 mA, VCE = -1.0 V 80
C
I
= -10 mA, VCE = -1.0 V 100 300
C
I
= -50 mA, VCE = -1.0 V 60
C
I
= -100 mA, VCE = -1.0V 30
C
IC = -10 mA, IB = -1.0 mA -0.25 V I
= -50 mA, IB = -5.0 mA -0.4 V
C
I
= -10 mA, IB = -1.0 mA -0.65 -0.85 V
C
I
= -50 mA, IB = -5.0 mA -0.95 V
C
= -10 mA, VCE = -20 V,
I
C
f = 100 MHz V
CB
f = 100 kHz V
EB
f = 100 kHz I
= -100 μA, VCE = -5.0 V,
C
R
S
f = 10 Hz to 15.7 kHz
V
CC
= -10 mA, IB1 = -1.0 mA
I
C
V
CC
I
B1
= -5.0 V, IE = 0,
= -0.5 V, IC = 0,
= 1.0 kΩ,
= -3.0 V, VBE = -0.5 V
= -3.0 V, IC = -10 mA,
= IB2 = -1.0 mA
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
250 MHz
4.5 pF
10.0 pF
4.0 dB
35 ns
225 ns
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1 3
Typical Performance Characteristics
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base-Emitter On Voltage vs. Collector
Current
Figure 5. Collector Cut-Off Current vs. Ambient
Temperature
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1 4
Figure 6. Common-Base Open Circuit Input and Out-
put Capacitance vs. Reverse Bias Voltage
Typical Performance Characteristics (continued)
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Figure 7. Noise Figure vs. Frequency
Figure 9. Switching Times vs. Collector Current
Figure 8. Noise Figure vs. Source Resistance
Figure 10. Turn On and Turn Off Times vs. Collector
Current
Figure 11. Power Dissipation vs. Ambient
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1 5
Temperature
Typical Performance Characteristics (continued)
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Figure 12. Voltage Feedback Ratio
Figure 14. Output Admittance
Figure 13. Input Impedance
Figure 15. Current Gain
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1 6
Physical Dimensions
D
TO-92
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Figure 16. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1 7
.
.
Physical Dimensions (continued)
SOT-223 4L
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Figure 17. MOLDED PACKAGE, SOT-223, 4-LEAD (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA04A.pdf
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1 8
.
.
Physical Dimensions (continued)
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30
+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
SOT-23
2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packaging/tr/SOT23-3L_tr.pdf
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1 9
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
.
.
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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