Fairchild MMBT3906, PZT3906, 2N3906 Schematic

2N3906 / MMBT3906 / PZT3906

2N3906

MMBT3906

PZT3906

EBC

TO-92 SOT-23 SOT-223

Mark:2A

C

B

E

B

C

PNP General Purpose Amplifier

2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier

September 2013

Description

This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.

Ordering Information

Part Number Marking Package Packing Method Pack Quantity

2N3906BU 2N3906 TO-92 Bulk 10000

2N3906TA 2N3906 TO-92 Ammo 2000

2N3906TAR 2N3906 TO-92 Ammo 2000

2N3906TF 2N3906 TO-92 Tape and Reel 2000

2N3906TFR 2N3906 TO-92 Tape and Reel 2000

MMBT3906 2A SOT-23 Tape and Reel 3000

PZT3906 3906 SOT-223 Tape and Reel 2500

2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier

Absolute Maximum Ratings

(1)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating cond itions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

A

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

T

J, Tstg

Note:

1. These ratings are based on a maximum junction temperature of 150 °C. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.

Collector-Emitter Voltage -40 V Collector-Base Voltage -40 V Emitter-Base Voltage -5.0 V Collector Current - Continuous -200 mA Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

V a lues are at TA = 25°C unless otherwise noted.

Symbol Parameter

P

D

R

θJC

R

θJA

Total Device Dissipation 625 350 1,000 mW Derate above 25°C5.02.88.0mW/°C Thermal Resistance, Junction to Case 83.3 °C/W Thermal Resistance, Junction to Ambient 200 357 125 °C/W

2N3906 MMBT3906

Notes:

2. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

3. Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead minimum 6 cm

Max.

(2)

PZT3906

(3)

Units

2

.

Electrical Characteristics

V a lues are at TA = 25°C unless otherwise noted.

Symbol

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

ON CHARACTERISTICS

h

FE

V

CE(sat)

V

BE(sat)

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

C

ibo

NF Noise Figure

SWITCHING CHARACTERISTICS

t

d

t

s

t

Note:

4. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -40 V Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0 -5.0 V Base Cutoff Current VCE = -30 V, VBE = 3.0 V -50 nA Collector Cutoff Current VCE = -30 V, VBE = 3.0 V -50 nA

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain - Bandwidth Product

Output Capacitance

Input Capacitance

Delay Time Rise Time 35 ns

r

Storage Time Fall Time 75 ns

f

Parameter Test Condition Min. Max. Units

(4)

IC = -1.0 mA, IB = 0 -40 V

IC = -0.1 mA, VCE = -1.0 V 60 I

= -1.0 mA, VCE = -1.0 V 80

C

I

= -10 mA, VCE = -1.0 V 100 300

C

I

= -50 mA, VCE = -1.0 V 60

C

I

= -100 mA, VCE = -1.0V 30

C

IC = -10 mA, IB = -1.0 mA -0.25 V I

= -50 mA, IB = -5.0 mA -0.4 V

C

I

= -10 mA, IB = -1.0 mA -0.65 -0.85 V

C

I

= -50 mA, IB = -5.0 mA -0.95 V

C

= -10 mA, VCE = -20 V,

I

C

f = 100 MHz V

CB

f = 100 kHz V

EB

f = 100 kHz I

= -100 μA, VCE = -5.0 V,

C

R

S

f = 10 Hz to 15.7 kHz

V

CC

= -10 mA, IB1 = -1.0 mA

I

C

V

CC

I

B1

= -5.0 V, IE = 0,

= -0.5 V, IC = 0,

= 1.0 kΩ,

= -3.0 V, VBE = -0.5 V

= -3.0 V, IC = -10 mA,

= IB2 = -1.0 mA

2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier

250 MHz

4.5 pF

10.0 pF

4.0 dB

35 ns

225 ns

Typical Performance Characteristics

2N3906 / MMBT3906 / PZT3906 — PNP General Purpose Amplifier

Figure 1. Typical Pulsed Current Gain vs. Collector

Current

Figure 3. Base-Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector-Emitter Saturation Voltage vs.

Collector Current

Figure 4. Base-Emitter On Voltage vs. Collector

Current

Figure 5. Collector Cut-Off Current vs. Ambient

Temperature

Figure 6. Common-Base Open Circuit Input and Out-

put Capacitance vs. Reverse Bias Voltage

Fairchild MMBT3906, PZT3906, 2N3906 Schematic [ru]