Page 1
MMBT3906
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
¨ PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
¨ As complementary type, the NPN
transistor MMBT3904 is recommended.
¨ This transistor is also available in the TO-92 case with
the type designation 2N3906.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: 2A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Collector-Base Voltage ÐV
CBO
40 V
Collector-Emitter Voltage ÐV
CEO
40 V
Emitter-Base Voltage ÐV
EBO
5.0 V
Collector Current ÐI
C
200 mA
Power Dissipation at T
A
= 25 ¡C P
tot
225
(1)
mW
300
(2)
mW
Thermal Resistance Junction to Substrate Backside R
qSB
320
(1)
¡C/W
Thermal Resistance Junction to Ambient Air R
qJA
450
(1)
¡C/W
Junction Temperature T
j
150 ¡C
Storage Temperature Range T
S
Ð55 to +150 ¡C
NOTES:
(1) Device on fiberglass subtrate, see layout
(2) Device on alumina substrate
.016 (0.4)
.056 (1.43
)
.037(0.95)
.037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.118 (3.0)
.052 (1.33
)
.005 (0.125)
.094 (2.4)
.037 (0.95)
SOT-23
1/5/99
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
NEW PRODUCT NEW PRODUCT NEW PRODUCT
Page 2
MMBT3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL MIN. MAX. UNIT
Collector-Base Breakdown Voltage
at ÐIC= 10 mA, IE = 0 ÐV
(BR)CBO
40 Ð V
Collector-Emitter Breakdown Voltage
at ÐIC = 1 mA, IB = 0 ÐV
(BR)CEO
40 Ð V
Emitter-Base Breakdown Voltage
at ÐIE = 10 mA, IC = 0 ÐV
(BR)EBO
5ÐV
Collector Saturation Voltage
at ÐI
C
= 10 mA, ÐIB = 1 mA ÐV
CEsat
Ð 0.25 V
at ÐIC = 50 mA, ÐIB = 5 mA ÐV
CEsat
Ð 0.4 V
Base Saturation Voltage
at ÐI
C
= 10 mA, ÐIB = 1 mA ÐV
BEsat
Ð 0.85 V
at ÐIC = 50 mA, ÐIB = 5 mA ÐV
BEsat
Ð 0.95 V
Collector-Emitter Cutoff Current
at ÐV
EB
= 3 V, ÐV
CE
= 30 V ÐI
CEV
Ð50nA
Emitter-Base Cutoff Current
at ÐV
EB
= 3 V, ÐV
CE
= 30 V ÐI
EBV
Ð50nA
DC Current Gain
at ÐV
CE
= 1 V, ÐIC = 0.1 mA h
FE
60 Ð Ð
at ÐV
CE
= 1 V, ÐIC = 1 mA h
FE
80 Ð Ð
at ÐV
CE
= 1 V, ÐIC = 10 mA h
FE
100 300 Ð
at ÐV
CE
= 1 V, ÐIC = 50 mA h
FE
60 Ð Ð
at ÐV
CE
= 1 V, ÐIC = 100 mA h
FE
30 Ð Ð
Input Impedance
at ÐV
CE
= 10 V, ÐIC = 1 mA, f = 1 kHz h
ie
110kW
Gain-Bandwidth Product
at ÐV
CE
= 20 V, ÐIC = 10 mA, f = 100 MHz f
T
250 Ð MHz
Collector-Base Capacitance
at ÐV
CB
= 5 V, f = 100 kHz C
CBO
Ð 4.5 pF
Emitter-Base Capacitance
at ÐV
EB
= 0.5 V, f = 100 kHz C
EBO
Ð10pF
Page 3
MMBT3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL MIN. MAX. UNIT
Voltage Feedback Ratio
at ÐVCE= 10 V, ÐIC = 1 mA, f = 1 kHz h
re
0.5 á 10
Ð4
8 á 10
Ð4
Ð
Small Signal Current Gain
at ÐVCE= 10 V, ÐIC = 1 mA, f = 1 kHz h
fe
100 400 Ð
Output Admittance
at ÐVCE= 1 V, ÐIC= 1 mA, f = 1 kHz h
oe
140mS
Noise Figure
at ÐV
CE
= 5 V, ÐIC= 100 mA, RG= 1 kW,
f = 10 É 15 000 Hz NF Ð 4 dB
Delay Time (see Fig. 1)
at ÐIB1= 1 mA, ÐIC= 10 mA t
d
Ð35ns
Rise Time (see Fig. 1)
at ÐIB1= 1 mA, ÐIC = 10 mA t
r
Ð35ns
Storage Time (see Fig. 2)
at IB1= ÐI
B2
= 1 mA, ÐIC= 10 mA t
s
Ð 225 ns
Fall Time (see Fig. 2)
at IB1= ÐIB2= 1 mA, ÐIC= 10 mA t
f
Ð75ns
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
0.59 (15)
0.2 (5)
0.03 (0.8)
0.30 (7.5)
0.12 (3)
.04 (1)
0.06 (1.5)
0.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
0.47 (12)
Dimensions in inches and (millimeters)
Loading...