Fairchild MMBD1501, MMBD1503, MMBD1504, MMBD1501A, MMBD1503A Schematic [ru]

MMBD1501/A / 1503/A / 1504/A / 1505/A

MMBD1501/A / 1503/A / 1504/A / 1505/A

3

3

Connection Diagrams

1501

3

3

1503

11

2

1

1

SOT-23

MMBD1501 11 MMBD1501A A1 1
MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15

Small Signal Diodes

Absolute Maximum Ratings* T

Symbol

V

Maximum Repetitive Reverse Voltage 200 V

RRM

I

Average Rectified Forward Current 200 mA

F(AV)

I

Non-repetitive Peak Forward Surge Current

FSM

Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond

T
TJ

stg

Storage Temperature Range -55 to +150
Operating Junction Temperature 150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

Symbol

PD Power Dissipation 350 mW
R

JA

θ

Thermal Resistance, Junction to Ambient 357

Parameter

Parameter

2

MARKING

= 25°C unless otherwise noted

A

11

2NC

3

1504 1505

21

Value

1.0

2.0

Value

1

2

3

2

Units

A
A

C

°

C

°

Units

C/W

°

Electrical Characteristics T

Symbol

VR Breakdown Voltage
VF Forward Voltage IF = 1.0 mA

IR Reverse Current VR = 125 V

CT Total Capacitance

2001 Fairchild Semiconductor Corporation

Parameter

= 25°C unless otherwise noted

A

Test Conditions

= 5.0 µA

I

R

Min

200
620

= 10 mA

I

F

I

= 50 mA

F

= 100 mA

I

F

I

= 200 mA

F

= 300 mA

I

F

= 125 V, TA = 150°C

V

R

= 180 V

V

R

= 180 V, TA = 150°C

V

R

V

= 0, f = 1.0 MHz

R

720
800
830

0.87

0.90

Max Units

720
830
890
930

1.1

1.15

1.0

3.0
10

5.0

4.0 PF

MMBD1500 series, Rev. B3

V

mV
mV
mV
mV

V
V

nA

A

µ

nA

A

µ

T ypical Characteristics

MMBD1501/A / 1503/A / 1504/A / 1505/A

Small Signal Diode

(continued)

[V]

325

300

R

275

Ta= 25 C

°

Reverse Voltage, V

250

3 5 10 20 30 50 100

Re ve rs e C u rren t, I

[uA ]

Figure 1. Reverse Voltage vs Reverse Current

BV - 3.0 to 100 uA

Ta= 25 C

550

[V]

500

F

450

400

Forward Voltage, V

350

°

1 2 3 5 10 20 30 50 100

Forward Current, IF [uA]

Figure 3. Forward Voltage vs Forward Current

VF - 1 to 100 uA

[nA ]

3

2

R

1

Ta= 25 C

°

Reverse Current, I

0

130 150 170 190 205

Reverse Voltage, VR [V]

Figure 2. Reverse Current vs Reverse Voltage

IR - 130 - 250 V olts

800

Ta= 25 C

°

750

[mV]

700

F

650

600

550

Forward Voltage, V

500

0.1 0.2 0.3 0 .5 1 2 3 5 10

Forward Current, IF [mA]

Figure 4. Forward Voltage vs Forward Current

VF - 0.1 to 10 mA

1.20

Ta= 25 C

1.15

1.10

[V]

1.05

F

1.00

0.95

0.90

0.85

Forward Voltage, V

0.80

0.75

°

10 20 3 0 50 100 200 300 5 00

Forward Cu rrent, IF [mA]

Figure 5. Forward Voltage vs Forward Current

VF - 10 to 800 mA

4.0

Ta= 25 C

°

3.5

3.0

2.5

2.0

Total Capacitance [pF]

1.5

1.0
02468101214

Reverse Voltage [V]

Figure 6. T otal Capacitance vs Reverse V oltage

VR - 0 to 15 V

MMBD1500 series, Rev. B3