
MMBD1201 / 1203 / 1204 / 1205
MMBD1201 / 1203 / 1204 / 1205
Connection Diagrams
3
3
1201
3
3
1203
24
2
1
2
1204 1205
2NC
11
3
2
3
1
MARKING
21
2
1
SOT-23
MMBD1201 24 MMBD1203 26
MMBD1204 27 MMBD1205 28
Small Signal Diodes
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 100 V
RRM
I
Average Rectified Forward Current 200 mA
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
Pulse Width = 1.0 second
Parameter
Pulse Width = 1.0 microsecond
T
stg
TJ
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Storage Temperature Range -55 to +150
Operating Junction Temperature 150
Thermal Characteristics
Symbol
PD Power Dissipation 350 mW
R
JA
θ
Thermal Resistance, Junction to Ambient 357
Parameter
= 25°C unless otherwise noted
A
Value
1.0
2.0
Value
Units
A
A
C
°
C
°
Units
C/W
°
Electrical Characteristics T
Symbol
VR Breakdown Voltage
VF Forward Voltage IF = 1.0 mA
IR Reverse Current VR = 20 V
CT Total Capacitance
trr
2001 Fairchild Semiconductor Corporation
Reverse Recovery Time I
Parameter
= 25°C unless otherwise noted
A
Test Conditions
IR = 100 µA
Min
100
550
I
= 10 mA
F
I
= 100 mA
F
I
= 200 mA
F
I
= 300 mA
F
V
= 50 V
R
= 50 V, TA = 150°C
V
R
V
= 0, f = 1.0 MHz
R
= IR = 10 mA, I
F
= 100 Ω
R
L
= 1.0 mA,
RR
660
820
0.87
-
Max Units
600
740
920
1.0
1.1
25
50
5.0
2.0 pF
4.0 ns
MMBD1200 series, Rev. C
V
mV
mV
mV
V
V
nA
nA
A
µ

T ypical Characteristics
MMBD1201 / 1203 / 1204 / 1205
Small Signal Diode
(continued)
150
140
[V]
R
130
120
Ta= 25 C
°
Reverse Voltage, V
110
1 2 3 5 10 20 30 50 1 0 0
Reverse Current, IR [uA]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100uA
Ta= 25 C
450
[mV]
400
F
350
300
Forward Voltage, V
250
°
1 2 3 5 10 20 30 50 10 0
Forward Current, IF [uA]
Figure 3. Forward V oltage vs Forward Current
VF - 1.0 to 100 uA
°
Ta= 25 C
300
250
[nA]
R
200
150
100
Reverse Current, I
50
0
10 20 30 50 70 100
Reverse Voltage, V
[V
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Ta= 25 C
700
650
[mV]
F
600
550
500
Forward Voltage, V
450
°
0.1 0.2 0.3 0.5 1 2 3 5 1 0
Forw a rd Curre nt, IF [mA]
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
°
Ta= 25 C
1.4
[V]
1.2
F
1.0
0.8
Forward Voltage, V
0.6
10 2 0 30 50 1 00 2 00 300 5 00
Forward Current, I
[mA]
Figure 5. Forward V oltage vs Forward Current
1.3
Ta= 25 C
°
1.2
1.1
Total Capacitance [pF]
1.0
0 2 4 6 8 10 12 14
Reverse Voltage [V]
Figure 6. T otal Capacitance vs Reverse V oltage
VF - 10 - 800 mA
MMBD1200 series, Rev. C

Typical Characteristics (continued)
MMBD1201 / 1203 / 1204 / 1205
Small Signal Diode
(continued)
4.0
3.5
3.0
2.5
2.0
1.5
Reverse Recovery Time [nS]
1.0
°
Ta= 25 C
10 20 30 40 50 60
Reverse Current [mA]
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
500
400
[mW ]
D
300
SOT-23 Pkg
200
100
Power Dissipation, P
0
0 50 100 150 200
Figure 9. Power Derating Curve
400
300
200
Curren t [mA]
100
0
0 50 100 150
Figure 8. Average Rectified Current (I
DO-35 Pkg
Average Temperature, IO [ C]
°
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
Ambient Tem perature, TA [ C]
°
versus Ambient T emperature (TA)
F(AV)
)
MMBD1200 series, Rev. C

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
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No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
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Rev. H4