Datasheet MCT2M, MCT2EM, MCT210M, MCT271M Datasheet (Fairchild)

MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
September 2009
Features
UL recognized (File # E90700, Vol. 2) IEC60747-5-2 recognized (File # 102497)
– Add option V (e.g., MCT2VM)
Description
The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
Applications
Power supply regulators Digital logic inputs
Microprocessor inputs
Schematic Package Outlines
Anode 1
Cathode 2
No Connection 3
6 Base
5 Collector
4 Emitter
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A
F
P
D
DETECTOR
I
C
V
CEO
P
D
Storage Temperature -40 to +150 °C Operating Temperature -40 to +100 °C Lead Solder Temperature 260 for 10 sec °C Total Device Power Dissipation @ T
= 25°C 250 mW
A
Derate above 25°C 2.94 mW/°C
DC/Average Forward Input Current 60 mA Reverse Input Voltage 3 V
LED Power Dissipation @ T
= 25°C 120 mW
A
Derate above 25°C 1.41 mW/°C
Collector Current 50 mA Collector-Emitter Voltage 30 V Detector Power Dissipation @ T
= 25°C 150 mW
A
Derate above 25°C 1.76 mW/°C
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 2
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Electrical Characteristics
(T
= 25°C unless otherwise specified)
A
Individual Component Characteristics
Symbol Parameter Test Conditions Device Min. Typ.* Max. Units
EMITTER
V
F
I
R
DETECTOR
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
*All typical T
Input Forward Voltage I
Reverse Leakage Current
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance V
= 25°C
A
= 20mA MCT2M
F
MCT2EM
MCT271M
T
= 0°C–70°C, I
A
V
= 3.0V MCT2M
R
= 40mA MCT210M 1.33
F
MCT2EM
MCT271M
T
= 0°C–70°C, V
A
I
= 1.0mA, I
C
T
= 0°C–70°C MCT210M
A
I
= 10µA, I
C
= 6.0V MCT210M
R
= 0 ALL 30 100 V
F
= 0 MCT2M
F
70 120 V
MCT2EM
MCT271M
T
= 0°C–70°C MCT210M 30
A
I
= 100µA, I
E
= 0 MCT2M
F
710 V
MCT2EM
MCT271M
T
= 0°C–70°C MCT210M 6 10
A
V
= 10V, I
CE
V
= 5V, T
CE
V
= 10V, I
CB
= 0V, f = 1MHz ALL 8 pF
CE
= 0 ALL 1 50 nA
F
= 0°C–70°C 30 µA
A
= 0 ALL 20 nA
F
1.25 1.50 V
0.001 10 µA
Isolation Characteristics
Symbol Parameter Test Conditions Min Typ* Max Units
V
ISO
R
ISO
C
ISO
*All typicals at T
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 3
Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk) Isolation Resistance V
= 500 VDC 10
I-O
11
Isolation Capacitance 0.2 2 pF
= 25°C
A
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Electrical Characteristics
(Continued) (T
= 25°C unless otherwise specified)
A
Transfer Characteristics
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR Output Collector
Current
V
CE(SAT)
Collector-Emitter Saturation Voltage
AC CHARACTERISTICS
t
AC Characteristic Saturated
on
Tu r n-on Time from 5V to 0.8V
t
Saturated Turn-off Time from
off
SAT to 2.0 V
t
t
t t
Tu r n-on Time I
on
Tu r n-off Time I
off
t
Rise Time I
r
t
Fall Time IF = 10mA, VCC = 10V,
f
Saturated turn-on time IF = 16mA, RL = 1.9k,
on
Saturated turn-off time
off
(Approximates a typical
TTL interface) t t
Saturated turn-on time IF = 16mA, RL = 4.7k,
on
Saturated turn-off time
off
(Approximates a typical
low power TTL interface)
t
Saturated rise time IF = 16mA, RL = 560,
r
t
Saturated fall time 11
f
T
PD (HL)
Saturated propagation
delay – HIGH to LOW
T
PD (LH)
Saturated propagation
delay – LOW to HIGH
t
Non-saturated rise time IC = 2mA, VCC = 5V,
r
t
Non-saturated fall time 2
f
t t
*All typicals at T
Non-saturated turn-on time IC = 2mA, VCC = 5V,
on
Non-saturated turn-off time 2 7
off
= 25°C
A
= 0°C–70°C MCT210M 150 %
T
A
= 10mA, V
I
F
= 10V MCT2M
CE
20
MCT2EM
MCT271M 45 90
= 3.2mA to 32mA,
I
F
= 0.4V, T
V
CE
I
= 2mA, I
C
= 0°C–70°C
A
= 16mA MCT2M
F
MCT210M 50
0.4 V
MCT2EM
MCT271M
I
= 16mA, I
C
= 0°C–70°C
T
A
I
= 15mA, V
F
= 2k , R
R
L
I
= 20mA, V
F
R
= 2k , R
L
I
= 15mA, V
F
= 2k , R
R
L
I
= 20mA, V
F
R
= 2k , R
L
= 10mA, V
F
= 100
R
L
= 10mA, V
F
= 100
R
L
= 10mA, V
F
= 100
R
L
= 100
R
L
= 32mA,
F
= 5V,
CC
= Open (Fig. 11)
B
= 5 V,
CC
= 100k ) (Fig. 11)
B
= 5V,
CC
= Open (Fig. 11)
B
= 5V,
CC
= 100k (Fig. 11)
B
= 10V,
CC
= 10V,
CC
= 10V,
CC
MCT210M
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
MCT2M
MCT2EM
1.1 µs
1.3
50 µs
20
s
s
s
1.5 µs
MCT271M 1.0 µs
= 5V (Fig. 11)
V
CC
= 5 V (Fig. 20)
V
CC
MCT271M
48 µs
1.0 98
MCT210M 1.0
= 5V) (Fig. 11, 12)
V
CC
IF = 16mA, RL = 2.7k
MCT210M
1.0
(Fig. 11, 12)
50
MCT210M 2
= 100 (Fig. 11)
R
L
MCT271M 2 7
= 100 (Fig. 20)
R
L
µs µs
µs µs µs
µs
µs µs µs µs
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 4
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Installation Classifications per DIN VDE 0110/1.89
Ta ble 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175 V
PR
Input to Output Test Voltage, Method b,
V
x 1.875 = VPR, 100% Production Test
IORM
1594 V
peak
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
x 1.5 = VPR, Type and Sample Test
IORM
1275 V
peak
with tm = 60 sec, Partial Discharge < 5pC
V
V
IORM
IOTM
Max. Working Insulation Voltage 850 V
Highest Allowable Over Voltage 6000 V
peak
peak
External Creepage 7 mm External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, V
= 500V 10
IO
9
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 5
Typical Performance Curves
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4
1.3
– FORWARD VOLTAGE (V)
F
1.2
V
1.1
1.0 110100
TA = 55°C
TA = 25°C
TA = 100°C
IF – LED FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.2
1.0
0.8
0.6
NORMALIZED CTR
0.4
0.2
-60 -40 -20 0 20 40 60 80 100
IF = 20mA
TA – AMBIENT TEMPERATURE (°C)
IF = 10mA
Normalized to I
F
T
A
IF = 5mA
= 10mA
= 25°C
Fig. 2 Normalized CTR vs. Forward Current
1.6 VCE = 5.0V
= 25°C
T
A
1.4
1.2
1.0
0.8
0.6
NORMALIZED CTR
0.4
0.2
0.0
02468101214161820
Normalized to
= 10mA
I
F
IF – FORWARD CURRENT (mA)
Fig. 4 CTR vs. RBE (Unsaturated)
1.0
)
0.9
IF = 20mA
0.8
RBE(OPEN)
0.7
/ CTR
0.6
RBE
0.5
0.4
0.3
0.2
0.1
0.0
NORMALIZED CTR ( CTR
10 100 1000
IF = 10mA
I
F
V
RBE – BASE RESISTANCE (kΩ)
= 5mA
= 5.0V
CE
Fig. 5 CTR vs. RBE (Saturated)
1.0
)
0.9
0.8
RBE(OPEN)
0.7
/ CTR
0.6
RBE
0.5
0.4
0.3
0.2
0.1
NORMALIZED CTR ( CTR
0.0 10 100 1000
RBE – BASE RESISTANCE (kΩ)
IF = 20mA
= 10mA
I
F
= 5mA
I
F
VCE= 0.3V
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
100
TA = 25°
10
1
0.1
0.01
– COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.001
0.01 0.1 1 10
CE (SAT)
V
C
IF = 5mA
IF = 2.5mA
IF = 20mA
IF = 10mA
IC – COLLECTOR CURRENT (mA)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 6
Typical Performance Curves (Continued)
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
1000
Fig. 7 Switching Speed vs. Load Resistor
IF = 10mA V
= 10V
CC
T
= 25°C
100
µs)
10
1
SWITCHING SPEED (
0.1
0.1 1 10 100
1.4
1.3
)
1.2
1.1
off(open)
1.0
/ t
)
BE
0.9
off(R
0.8
– (t
0.7
off
0.6
0.5
0.4
0.3
NORMALIZED t
0.2
0.1
10 100 1000 10000 100000
A
T
off
T
f
T
on
T
r
R – LOAD RESISTOR (kΩ)
Fig. 9 Normalized t
RBE – BASE RESISTANCE (kΩ)
off
vs. R
BE
V
CC =
I
C
R
L
10V
= 2mA = 100
5.0
4.5
)
4.0
on(open)
/ t
)
3.5
BE
on(R
3.0
– (t
2.5
on
2.0
1.5
NORMALIZED t
1.0
0.5
10 100 1000 10000 100000
Fig. 8 Normalized ton vs. R
BE
V
CC =
I
C
R
L
10V
= 2mA = 100
RBE – BASE RESISTANCE (kΩ)
Fig. 10 Dark Current vs. Ambient Temperature
10000
VCE = 10 V T
= 25
˚C
A
1000
100
10
1
0.1
- COLLECTOR -EMITTER DARK CURRENT (nA)
0.01
CEO
I
0.001 020406080100
TA – AMBIENT TEMPERATURE
(˚C)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 7
Typical Electro-Optical Characteristics
TEST CIRCUIT WAVE FORMS
V
= 10V
CC
I
C
R
L
OUTPUT
I
Adjust
F to produce IC = 2mA
Figure 11. Switching Time Test Circuit and Waveforms
INPUT
INPUT
I
F
R
BE
10%
90%
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
INPUT PULSE
OUTPUT PULSE
t
r
t
on
t
f
t
off
TPD
HL
OUTPUT
(SATURATED)
1.5 V
Figure 12. Switching Time Waveforms (MCT210M)
TPD
1.5 V
LH
5 V
SAT
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 8
Package Dimensions
Through Hole 0.4" Lead Spacing
8.13–8.89
64
8.13–8.89
64
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
6.10–6.60
5.08 (Max.)
3.28–3.53
0.38 (Min.)
(0.86)
1.02–1.78
Pin 1
13
0.41–0.51
0.25–0.36
0.76–1.14
2.54–3.81
2.54 (Bsc)
Surface Mount
7.62 (Typ.)
15° (Typ.)
8.13–8.89
64
0.20–0.30
6.10–6.60
5.08 (Max.)
3.28–3.53
0.38 (Min.)
(0.86)
1.02–1.78
Pin 1
13
0.41–0.51
(1.78)
0.25–0.36
0.76–1.14
2.54–3.81
2.54 (Bsc)
(1.52)
0.20–0.30
10.16–10.80
(2.54)
(0.76)
8.43–9.90
6.10–6.60
Pin 1
(7.49)
(10.54)
13
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.38 (Min.)
(0.86)
1.02–1.78
0.41–0.51
0.76–1.14
2.54 (Bsc)
0.16–0.88
(8.13)
0.20–0.30
Note:
All dimensions in mm.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 9
Ordering Information
Order Entry Identifier
Option
No suffix MCT2M Standard Through Hole Device (50 units per tube)
S MCT2SM Surface Mount Lead Bend
SR2 MCT2SR2M Surface Mount; Tape and Reel (1,000 units per reel)
T MCT2TM 0.4" Lead Spacing
V MCT2VM IEC60747-5-2 TV MCT2TVM IEC60747-5-2, 0.4" Lead Spacing SV MCT2SVM IEC60747-5-2, Surface Mount
SR2V MCT2SR2VM IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel)
(Example) Description
Marking Information
1
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
MCT2
V X YY Q
43
5
2
6
Definitions
1Fairchild logo
2Device number
3 VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘7’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with date code ‘325’ or earlier are marked in portrait format.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 10
Carrier Tape Specification
4.5 ± 0.20
0.30 ± 0.05
21.0 ± 0.1
0.1 MAX
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
°C
140
120
100
80
60
40
20
0
0 60 180120 270
12.0 ± 0.1
2.0 ± 0.05
4.0 ± 0.1
10.1 ± 0.20
1.822°C/Sec Ramp up rate
33 Sec
Time (s)
260°C
Time above
183°C = 90 Sec
1.5 MIN
Ø
1.75 ± 0.10
11.5 ± 1.0
9.1 ± 0.20
Ø
1.5 ± 0.1/-0
>245°C = 42 Sec
360
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
24.0 ± 0.3
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 11
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Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START SPM STEALTH™ SuperFET
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MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
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As used herein:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 12
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