Fairchild MCT2M, MCT2EM, MCT210M, MCT271M service manual

MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers

September 2009

MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers

Features

■

UL recognized (File # E90700, Vol. 2) IEC60747-5-2 recognized (File # 102497)

■

– Add option V (e.g., MCT2VM)

Description

The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

Applications

■

Power supply regulators Digital logic inputs

■

Microprocessor inputs

Schematic Package Outlines

Anode 1

Cathode 2

No Connection 3

6 Base

5 Collector

4 Emitter

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

D

EMITTER

I

F

V

R

I

(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3 A

F

P

D

DETECTOR

I

C

V

CEO

P

D

Storage Temperature -40 to +150 °C Operating Temperature -40 to +100 °C Lead Solder Temperature 260 for 10 sec °C Total Device Power Dissipation @ T

= 25°C 250 mW

A

Derate above 25°C 2.94 mW/°C

DC/Average Forward Input Current 60 mA Reverse Input Voltage 3 V

LED Power Dissipation @ T

= 25°C 120 mW

A

Derate above 25°C 1.41 mW/°C

Collector Current 50 mA Collector-Emitter Voltage 30 V Detector Power Dissipation @ T

= 25°C 150 mW

A

Derate above 25°C 1.76 mW/°C

MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers

Ω

MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C unless otherwise speciﬁed)

A

Individual Component Characteristics

Symbol Parameter Test Conditions Device Min. Typ.* Max. Units

EMITTER

V

F

I

R

DETECTOR

BV

CEO

BV

CBO

BV

ECO

I

CEO

I

CBO

C

CE

*All typical T

Input Forward Voltage I

Reverse Leakage Current

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Collector Breakdown Voltage

Collector-Emitter Dark Current

Collector-Base Dark Current

Capacitance V

= 25°C

A

= 20mA MCT2M

F

MCT2EM

MCT271M

T

= 0°C–70°C, I

A

V

= 3.0V MCT2M

R

= 40mA MCT210M 1.33

F

MCT2EM

MCT271M

T

= 0°C–70°C, V

A

I

= 1.0mA, I

C

T

= 0°C–70°C MCT210M

A

I

= 10µA, I

C

= 6.0V MCT210M

R

= 0 ALL 30 100 V

F

= 0 MCT2M

F

70 120 V

MCT2EM

MCT271M

T

= 0°C–70°C MCT210M 30

A

I

= 100µA, I

E

= 0 MCT2M

F

710 V

MCT2EM

MCT271M

T

= 0°C–70°C MCT210M 6 10

A

V

= 10V, I

CE

V

= 5V, T

CE

V

= 10V, I

CB

= 0V, f = 1MHz ALL 8 pF

CE

= 0 ALL 1 50 nA

F

= 0°C–70°C 30 µA

A

= 0 ALL 20 nA

F

1.25 1.50 V

0.001 10 µA

Isolation Characteristics

Symbol Parameter Test Conditions Min Typ* Max Units

V

ISO

R

ISO

C

ISO

*All typicals at T

Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk) Isolation Resistance V

= 500 VDC 10

I-O

11

Isolation Capacitance 0.2 2 pF

= 25°C

A

MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers

Electrical Characteristics

(Continued) (T

= 25°C unless otherwise speciﬁed)

A

Transfer Characteristics

Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit

DC CHARACTERISTICS

CTR Output Collector

Current

V

CE(SAT)

Collector-Emitter Saturation Voltage

AC CHARACTERISTICS

t

AC Characteristic Saturated

on

Tu r n-on Time from 5V to 0.8V

t

Saturated Turn-off Time from

off

SAT to 2.0 V

t

t t

Tu r n-on Time I

on

Tu r n-off Time I

off

t

Rise Time I

r

t

Fall Time IF = 10mA, VCC = 10V,

f

Saturated turn-on time IF = 16mA, RL = 1.9kΩ,

on

Saturated turn-off time

off

(Approximates a typical

TTL interface) t t

Saturated turn-on time IF = 16mA, RL = 4.7kΩ,

on

Saturated turn-off time

off

(Approximates a typical

low power TTL interface)

t

Saturated rise time IF = 16mA, RL = 560Ω,

r

t

Saturated fall time 11

f

T

PD (HL)

Saturated propagation

delay – HIGH to LOW

T

PD (LH)

Saturated propagation

delay – LOW to HIGH

t

Non-saturated rise time IC = 2mA, VCC = 5V,

r

t

Non-saturated fall time 2

f

t t

*All typicals at T

Non-saturated turn-on time IC = 2mA, VCC = 5V,

on

Non-saturated turn-off time 2 7

off

= 25°C

A

= 0°C–70°C MCT210M 150 %

T

A

= 10mA, V

I

F

= 10V MCT2M

CE

20

MCT2EM

MCT271M 45 90

= 3.2mA to 32mA,

I

F

= 0.4V, T

V

CE

I

= 2mA, I

C

= 0°C–70°C

A

= 16mA MCT2M

F

MCT210M 50

0.4 V

MCT2EM

MCT271M

I

= 16mA, I

C

= 0°C–70°C

T

A

I

= 15mA, V

F

= 2k Ω , R

R

L

I

= 20mA, V

F

R

= 2k Ω , R

L

I

= 15mA, V

F

= 2k Ω , R

R

L

I

= 20mA, V

F

R

= 2k Ω , R

L

= 10mA, V

F

= 100 Ω

R

L

= 10mA, V

F

= 100 Ω

R

L

= 10mA, V

F

= 100Ω

R

L

= 100Ω

R

L

= 32mA,

F

= 5V,

CC

= Open (Fig. 11)

B

= 5 V,

CC

= 100k Ω ) (Fig. 11)

B

= 5V,

CC

= Open (Fig. 11)

B

= 5V,

CC

= 100k Ω (Fig. 11)

B

= 10V,

CC

= 10V,

CC

= 10V,

CC

MCT210M

MCT2M

MCT2EM

MCT2M

MCT2EM

MCT2M

MCT2EM

MCT2M

MCT2EM

MCT2M

MCT2EM

MCT2M

MCT2EM

MCT2M

MCT2EM

MCT2M

MCT2EM

1.1 µs

1.3

50 µs

20

2µs

1.5 µs

MCT271M 1.0 µs

= 5V (Fig. 11)

V

CC

= 5 V (Fig. 20)

V

CC

MCT271M

48 µs

1.0 98

MCT210M 1.0

= 5V) (Fig. 11, 12)

V

CC

IF = 16mA, RL = 2.7kΩ

MCT210M

1.0

(Fig. 11, 12)

50

MCT210M 2

= 100Ω (Fig. 11)

R

L

MCT271M 2 7

= 100Ω (Fig. 20)

R

L

µs µs

µs µs µs

µs

µs µs µs µs