Fairchild KST92, KST93 service manual
KST92/KST93
PNP Epitaxial Silicon Transistor
Features
• High Voltage Transistor
• High Current, Wide SOA
September 2009
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
KST92/KST93 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
=25°C unless otherwise noted
A
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
T
J, TSTG
C
Collector Base Voltage
: KST92
: KST93
Collector-Emitter Voltage
: KST92
: KST93
Emitter-Base Voltage -5 V
Collector Current -500 mA
Junction and Storage Temperature 150 °C
-300
-200
-300
-200
Thermal Characteristics
Symbol Parameter Value Units
P
D
R
* Thermal Resistance, Junction to Ambient 500 °C/W
θJA
* note) minimum land pattern size.
Power Dissipation (TA=25°C)
250 mW
V
V
V
V
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST92/KST93 Rev . C1 1
KST92/KST93 — PNP Epitaxial Silicon Transistor
Electrical Characteristics T
=25°C unless otherwise noted
A
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.5 V
CE
V
(sat) * Base-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.9 V
BE
C
ob
f
T
* Pulse Test: PW≤300μs, Duty Cycle≤2%
Collector-Base Breakdown Voltage
: KST92
: KST93
* Collector-Emitter Breakdown Voltage
: KST92
: KST93
IC= -100μA, IE=0
-300
-200
IC= -1mA, IB=0
-300
-200
Emitter-Base Breakdown Voltage IE= -100μA, IC=0 -5 V
Collector Cut-off Current
: KST92
: KST93
= -200V, IE=0
V
CB
VCB= -160V, IE=0
-0.25
-0.25
Emitter Cut-off Current VEB= -5V, IC=0 -0.1 μA
* DC Current Gain
VCE= -10V, IC= -1mA
= -10V, IC= -10mA
V
CE
VCE= -10V, IC= -30mA
25
40
25
Output Capacitance
: KST92
: KST93
Current Gain Bandwidth Product VCE= -20V, IC= -10mA
VCB= -20V, IE=0
f=1MHz
6
8
50 MHz
f=100MHz
V
V
V
V
μA
μA
pF
pF
Marking Code
Type KST92 KST93
Mark 2D 2E
Marking
2D
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST92/KST93 Rev . C1 2
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