KSB1121
PNP Epitaxial Planar Silicon Transistor
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity
• Fast Switching Speed
• Complement to KSD1621
Marking
11 21
PY WW
1
1. Base 2. Collector 3. Emitter
SOT-89
Weekly code
Year co de
hFE grage
KSB1121 PNP Epitaxial Planar Silicon Transistor
July 2005
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
P
C
PC*
T
J
T
STG
* Mounted on Ceramic Board (250mm
Electrical Characteristics
Collector-Base Voltage -30 V
Collector-Emitter Voltage -25 V
Emitter-Base Voltage -6 V
Collector Current -2 A
Collector Power Dissipation 500
1.3
mW
W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
2
x 0.8mm)
Ta = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
BV
BV
I
CBO
I
EBO
h
h
V
V
CBO
CEO
EBO
FE1
FE2
CE
BE
Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -30 V
Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 -25 V
Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -6 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
= -20V, IE = 0 -100 nA
CB
= -4V, IC = 0 -100 nA
BE
= -2V, IC = -0.1A
CE
V
= -2V, IC = -1.5A
CE
100
65
560
(sat) Collector-Emitter Saturation Voltage IC = -1.5A, IB = -75mA -0.35 -0.6 V
(sat) Base-Emitter Saturation Voltage IC = -1.5A, IB = -75mA -0.85 -1.2 V
©2005 Fairchild Semiconductor Corporation
KSB1121 Rev. B1
1
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KSB1121 PNP Epitaxial Planar Silicon Transistor
Electrical Characteristics
(Continued) Ta = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
fT Current Gain Bandwidth Product V
C
t
ON
t
STG
t
F
ob
Output Capacitance V
Turn On Time * V
Storage Time * 350 ns
Fall time * 25 ns
= -10V, IC = -50mA 150 MHz
CE
= -10V, IE = 0, f = 1MHz 32 pF
CB
= -12V, VBE = -5V
CC
I
= -I
B1
I
C
= -25mA
B2
= -500mA, RL = 24Ω
60 ns
hFE Classification
Classification R S T U
h
FE1
100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
1121 KSB1121 SOT-89 13” -- 4,000
KSB1121 Rev. B1
2
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Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
-2.0
IB = -200mA
IB = -100mA
IB = -50mA
IB = -30mA
IB = -20mA
1000
KSB1121 PNP Epitaxial Planar Silicon Transistor
VCE= -2V
-1.6
-1.2
-0.8
[A], COLLECTOR CURRENT
C
-0.4
I
0.0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = -10mA
IB = -8mA
IB = -6mA
IB = -4mA
IB = -2mA
IB = 0
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
V
-0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
IC = 10 I
-3.2
B
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
[A], COLLECTOR CURRENT
C
I
-0.4
0.0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
VCE = -2V
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
1000
100
10
[pF], CAPACITANCE
ob
C
1
-0.1 -1 -1 0 -100
KSB1121 Rev. B1
VCB [V], COLLECTOR-BASE VOLTAGE
IE=0
f = 1MHz
1000
100
10
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
3
VCE = -10V
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Mechanical Dimensions
4.50
±0.20
SOT-89
1.50
KSB1121 PNP Epitaxial Planar Silicon Transistor
±0.20
0.50
1.65
±0.10
1.50 TYP 1.50 TYP
±0.10
C0.2
0.40
±0.10
(0.50)
±0.20
2.50
(1.10)
±0.20
4.10
0.40
(0.40)
+0.10
–0.05
KSB1121 Rev. B1
Dimensions in Millimeters
4
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TRADEMARKS
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
KSB1121 PNP Epitaxial Planar Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
5
KSB1121 Rev. B1
Rev. I16
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