Datasheet KSC1008 Datasheet (Fairchild)

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KSC1008

NPN Epitacial Silicon Transistor

Features

• Low frequency amplifier medium speed switching.

• High Collector-Base Voltage : V

• Collector Current : IC=700mA

• Collector Power Dissipation : PC=800mW

• Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)

• Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector)

• Complement to KSA708

CBO

=80V.

KSC1008 NPN Epitacial Silicon Transistor

September 2006

TO-92

1 2 3

KSC1008 : 1. Emitter 2. Base 3. Collector KSC1008C : 1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

Symbol Parameter Value Units

CBO

CEO

EBO

stg

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics * T

Collector-Base Voltage 80 V Collector-Emitter Voltage 60 V Emitter-Base Voltage 8 V Collector current 700 mA Collector Power Dissipation 800 mW Junction Temperature +150 °C Storage Temperature -55 ~ +150 °C

= 25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units

CBO

CEO

EBO

CBO

EBO

VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0.4 V VBE (sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.1 V f

* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%

Collector-Base Breakdown Voltage IC=100µA, IE=0 80 V Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 V Collector Cut-off Current VCB=60V, IE=0 0.1 µA Emitter Cut-off Current VEB=5V, IC=0 0.1 µA DC Current Gain VCE=2V, IC=50mA 40 400

Current Gain Bandwidth Product VCE=10V, IC=50mA 30 50 MHz Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF

hFE Classification

Classification R O Y G

KSC1008 Rev. B

40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400

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Package Marking and Ordering Information

Device(note) Device Marking Package Packing Method Qty(pcs) Pin Definitions

KSC1008COBU C1008OC TO-92 BULK -- 1.Emitter 2.Collector 3.Base KSC1008COTA C1008OC TO-92 TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base KSC1008CYBU C1008YC TO-92 BULK -- 1.Emitter 2.Collector 3.Base KSC1008CYTA C1008YC TO-92 TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base KSC1008GBU C1008G TO-92 BULK -- 1.Emitter 2.Base 3.Collector KSC1008GTA C1008G TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector KSC1008OBU C1008O TO-92 BULK -- 1.Emitter 2.Base 3.Collector KSC1008OTA C1008O TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector KSC1008RBU C1008R TO-92 BULK -- 1.Emitter 2.Base 3.Collector KSC1008RTA C1008R TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector KSC1008YBU C1008Y TO-92 BULK -- 1.Emitter 2.Base 3.Collector KSC1008YTA C1008Y TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector KSC1008YTF C1008Y TO-92 TAPE & REEL 2,000 1.Emitter 2.Base 3.Collector

Note : Affix “-C-” - center collector pin. Affix “-R-, -O-, -Y-, -G-” - hHE classification Suffix “-BU” - Bulk packing, straight lead form.(see package dimensions) Suffix “-TF” - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions) SUffix “-TA” - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions)

KSC1008 NPN Epitacial Silicon Transistor

KSC1008 Rev. B

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Typical Characteristics

KSC1008 NPN Epitacial Silicon Transistor

200

180

160

140

120

100

[mA], COLLECTOR CURRENT

0 5 10 15 20 25 30 35 40 45 50

IB = 1.8mA

IB = 1.6mA

IB = 1.4mA

IB = 1.2mA IB = 1.0mA

IB = 0.8mA

IB = 0.6mA

IB = 0.4mA

IB = 0.2mA

VCE[V], COLLECTOR-EMITTER VOLTAGE

240 220 200 180 160 140 120 100

, DC CURRENT GAIN

40 20

1 10 100 1000

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat)

VCE(sat)

IC=10I

1000

100

[mA], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VBE[V], BASE-EMITTER VOLTAGE

0.1

(sat)[V], SATURATION VOLTAGE

(sat), V

0.01

1 10 100 1000

IC[mA], COLLECTOR CURRENT

VCE = 2V

VCE=2V

[pF],CAPACTIANCE

KSC1008 Rev. B

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100

1 10 100

VCB[V], COLLECTOR-BASE VOLTAGE

f=1MHz I

Figure 5. Collector Output Capacitance

Figure 4. Base-Emitter On Voltage

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Package Dimensions

TO-92 Straight Lead Form

+0.25

4.58

–0.15

0.46

±0.10

KSC1008 NPN Epitacial Silicon Transistor

±0.20

4.58

±0.40

14.47

1.27TYP

[1.27

3.86MAX

±0.10

1.02

±0.20

+0.10

0.38

–0.05

3.60

±0.20

1.27TYP

[1.27

(R2.29)

±0.20

]

(0.25)

]

+0.10

0.38

–0.05

Dimensions in Millimeters

TO-92 0.200 In-Line Spacing Lead Form

KSC1008 Rev. B

Dimensions in Inches[Millimeters]

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TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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TINYOPTO™ TruTranslation™ UHC™

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KSC1008 NPN Epitacial Silicon Transistor

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a li fe support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or eff ectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for

Preliminary First Production This datasheet contains preliminary dat a, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

KSC1008 Rev. B

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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Rev. I20