Fairchild HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 service manual

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HUF75639G3, HUF75639P3, HUF75639S3S,

HUF75639S3

Data Sheet December 2001

56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs

These N-Channel pow er MOSFETs
are manufactured using the
innovat ive Ul traFET® pr ocess . This

advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outsta nding performance. This device i s c apa ble
of withstanding hi gh energy in the avalanche mode and the
diode exhibits very low re verse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switc hes, and power management in portab le
and battery-operated products.

Formerly developmental type TA75639.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75639G3 TO-247 75639G
HUF75639P3 TO-220AB 75639P
HUF75639S3S TO-263AB 75639S
HUF75639S3 TO-262AA 75639S

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.

Features

• 56A, 100V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Electrical Models

- Spice and Saber Thermal Impedance M ode ls

- www.fairchildsemi.com

• Peak Current vs Pulse Width C urve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(TAB)

JEDEC TO-263AB TO-262AA

GATE

SOURCE

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

DRAIN
(FLANGE)

For severe environments, see our Automotive HUFA series.

DRAIN

(FLANGE)

DRAIN

(TAB)

SOURCE

SOURCE

DRAIN

GATE

DRAIN

GATE

©2001 Fairchild Semiconductor Corpo ration HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

100 V
100 V
±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

J

STG

D

AS

D

56

Figure 4

Figures 6, 14, 15

200

1.35

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. T

= 25oC to 150oC.

J

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSSID

DSS

GSS

= 250µA, VGS = 0V (Figure 11) 100 - - V

VDS = 95V, VGS = 0V - - 1 µA

= 90V, VGS = 0V, TC = 150oC--250µA

V

DS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 56A, VGS = 10V (Figure 9) - 0.021 0.025 Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

θJC
θJA

ON

r

f

OFF

(Figure 3) - - 0.74
TO-247 - - 30
TO-220, TO-263 - - 62

VDD = 50V, ID ≅ 56A,

= 0.89Ω, VGS = 10V,

R

L

R

= 5.1Ω

GS

--110ns

-15- ns

-60- ns

-20- ns

-25- ns

- - 70 ns

o

C/W

o

C/W

o

C/W

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

g(TOT)VGS

g(10)

g(TH)

gs
gd

= 0V to 20V VDD = 50V,

≅ 56A,

I

VGS = 0V to 10V - 57 75 nC
VGS = 0V to 2V - 3.7 4.5 nC

D

= 0.89Ω

R

L

I

g(REF)

= 1.0mA

(Figure 13)

- 110 130 nC

-9.8- nC

-24-nC

©2001 Fairchild Semiconductor Corpo ration HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B

5

5

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

ISS

OSS

RSS

SD

rr

RR

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

- 2000 - pF

- 500 - pF

-65-pF

ISD = 56A - - 1.25 V
ISD = 56A, dISD/dt = 100A/µs - - 110 ns
ISD = 56A, dISD/dt = 100A/µs - - 320 nC

60

50

40

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125

FIGURE 1. NORMALIZED POWER DISSIPATI ON vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

30

20

, DRAIN CURRENT (A)

D

I

10

0

17

25 50 75 100 125 150 17

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

t

x R

θJC

+ T

2

C

1

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

10

θJC

1/t2

0

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2001 Fairchild Semiconductor Corpo ration HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B