Fairchild HUF75345G3, HUF75345P3, HUF75345S3S service manual

HUF75345G3, HUF75345P3, HUF75345S3S

Data Sheet December 2009

75A, 55V, 0.007 Ohm, N-Channel UltraFET
Power MOSFETs

These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This

advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA75345.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75345G3 TO-247 75345G

HUF75345P3 TO-220AB 75345P

HUF75345S3S TO-263AB 75345S

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75345S3ST.

Features

• 75A, 55V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™
Models

- Thermal Impedance SPICE and SABER Models
Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN
(TAB)

JEDEC TO-263AB

GATE

SOURCE

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

©2009 Fairchild Semiconductor Corporation HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2

HUF75345G3, HUF75345P3, HUF75345S3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

55 V

55 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

J

STG

D

DM

AS

D

75

Figure 4

Figure 6

325

2.17

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. T

= 25oC to 150oC.

J

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSSID

DSS

GSS

= 250µA, VGS = 0V (Figure 11) 55 - - V

VDS = 50V, VGS = 0V - - 1 µA

= 45V, VGS = 0V, TC = 150oC--250µA

V

DS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V

Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 75A, VGS = 10V (Figure 9) - 0.006 0.007 W

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (V

GS

= 10V)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

θJC

θJA

ON

r

f

OFF

(Figure 3) - - 0.46

TO-247 - - 30

TO-220, TO-263 - - 62

VDD = 30V, ID≅ 75A,

= 0.4Ω, VGS= 10V,

R

L

= 2.5Ω

R

GS

--195ns

-14- ns

- 118 - ns

-42- ns

-26- ns

- - 98 ns

o

C/W

o

C/W

o

C/W

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

Gate Charge at 10V Q

Threshold Gate Charge Q

Gate to Source Gate Charge Q

Gate to Drain “Miller” Charge Q

g(TOT)VGS

g(10)

g(TH)

gs

gd

= 0V to 20V VDD = 30V,

≅ 75A,

I

VGS = 0V to 10V - 125 165 nC

VGS = 0V to 2V - 6.8 10 nC

D

= 0.4Ω

R

L

= 1.0mA

I

g(REF)

(Figure 13)

- 220 275 nC

-14-nC

-58-nC

©2009 Fairchild Semiconductor Corporation HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2

HUF75345G3, HUF75345P3, HUF75345S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t

Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

ISS

OSS

RSS

SD

rr

RR

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

- 4000 - pF

- 1450 - pF

- 450 - pF

ISD = 75A - - 1.25 V

ISD = 75A, dISD/dt = 100A/µs--55ns

ISD = 75A, dISD/dt = 100A/µs--80nC

80

60

40

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 175

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

, DRAIN CURRENT (A)

20

D

I

0

25

50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

x R

θJC

0

10

1

θJC

t

2

+ T

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

©2009 Fairchild Semiconductor Corporation HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2

HUF75345G3, HUF75345P3, HUF75345S3S

Typical Performance Curves (Continued)

2000

TC = 25oC

1000

VGS = 20V

VGS = 10V

, PEAK CURRENT (A)

I

DM

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

50

-5

10

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

1000

100

TJ = MAX RATED
T

= 25oC

C

100µs

1ms

10

OPERATION IN THIS

, DRAIN CURRENT (A)

AREA MAY BE

D

I

LIMITED BY r

V

DSS(MAX)

DS(ON)

= 55V

10ms

1

1200

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

10 100

1000

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

100

, AVALANCHE CURRENT (A)

STARTING TJ = 150oC

AS

I

10

0.01

0.1

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

DSS

C

150

- VDD) +1]

I = I

25

DSS

0

10

- VDD)

STARTING TJ = 25oC

1 10 100

1

10

150

120

= 20V

V

GS

VGS = 10V
VGS = 7V

VGS = 5V

150

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

120

VGS = 6V

90

60

, DRAIN CURRENT (A)

D

I

30

0

01234

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T

= 25oC

C

VDS, DRAIN TO SOURCE VOLTAGE (V)

90

60

, DRAIN CURRENT (A)

D

I

30

0

0 3.0 4.5 6.0 7.51.5

25oC

175oC

-55oC

VGS, GATE TO SOURCE VOLTAGE (V)

VDD= 15V

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. TRANSFER CHARACTERISTICS

©2009 Fairchild Semiconductor Corporation HUF75345G3, HUF75345P3, HUF75345S3S Rev. B2