Fairchild FSDM0565RBIWDTU, FSDM0565RBWDTU, FSDM0565RBIWDTU, FSDM0565RBWDTU Schematics
FSDM0565RB
www.fairchildsemi.com
Green Mode Fairchild Power Switch (FPS
Features
• Internal Avalanche Rugged Sense FET
• Advanced Burst-Mode operation consumes under 1 W at
240VAC & 0.5W load
• Precision Fixed Operating Frequency (66kHz)
• Internal Start-up Circuit
• Improved Pulse by Pulse Current Limiting
• Over Voltage Protection (OVP)
• Over Load Protection (OLP)
• Internal Thermal Shutdown Function (TSD)
• Auto-Restart Mode
• Under Voltage Lock Out (UVLO) with hysteresis
• Low Operating Current (2.5mA)
•
Built-in Soft Start
Application
• SMPS for LCD monitor and STB
• Adaptor
Description
The FSDM0565RB is an integrated Pulse Width Modulator
(PWM) and Sense FET specifically designed for high
performance offline Switch Mode Power Supplies (SMPS)
with minimal external components. This device is an
integrated high voltage power switching regulator which
combine an avalanche rugged Sense FET with a current mode
PWM control block. The PWM controller includes integrated
fixed frequency oscillator, under voltage lockout, leading edge
blanking (LEB), optimized gate driver, internal soft start,
temperature compensated precise current sources for a loop
compensation and self protection circuitry. Compared with
discrete MOSFET and PWM controller solution, it can reduce
total cost, component count, size and weight simultaneously
increasing efficiency, productivity, and system reliability. Thi s
device is a basic platform well suited for cost effective
designs of flyback converters.
PRODUCT
FSDM0565RB 60W 70W 50W 60W
FSDM0565RBI 60W 70W 50W 60W
FSDM07652RB 70W 80W 60W 70W
Notes:
1. Typical continuous power in a non-ventilated enclosed
adapter measured at 50°C ambient.
2. Maximum practical continuous power in an open frame
design at 50°C ambient.
3. 230 VAC or 100/115 VAC with doubler.
Typical Circuit
AC
IN
OUTPUT POWER TABLE
230VAC ±15%
Adapt-
(1)
er
Open
Frame
Table 1. Maximum Output Power
Drain
Vstr
PWM
Vfb Vcc
Figure 1. Typical Flyback Application
Source
TM
(3)
(2)
)
85-265VAC
Adapt-
(1)
er
Open
Frame
DC
OUT
(2)
FPSTM is a trademark of Fairchild Semiconductor Corporation.
©2006 Fairchild Semiconductor Corporation
Rev.1.0.6
FSDM0565RB
Internal Block Diagram
N.C
FB
5
4
0.5/0.7V
I
delay
V
SD
Vcc
Vovp
TSD
+
-
Vcc Vref
Soft start
Vcc
3 1
8V/12V
I
FB
2.5R
Vcc good
OSC
PWM
R
I
start
Vstr
Vref
SQQ
R
6
Internal
Bias
Gate
driver
Drain
LEB
GND
2
Vcc good
SQQ
R
V
CL
Figure 2. Functional Block Diagram of FSDM0565RB
2
Pin Definitions
Pin Number Pin Name Pin Function Description
1Drain
2 GND This pin is the control ground and the Sense FET source.
3Vcc
4Vfb
5N.C-
6Vstr
This pin is the high voltage power Sense FET drain. It is designed to drive the
transformer directly.
This pin is the positive supply voltage input. During start up, the power is supplied by an internal high voltage current source that is connected to the Vstr pin.
When Vcc reaches 12V , the internal high volt age current source is disabled and
the power is supplied from the auxiliary transformer winding.
This pin is internally connected to the inverting input of the PWM comparator.
The collector of an opto-coupler is typically tied to this pin. For stable operation,
a capacitor should be placed between this pin and GND. If the voltage of this pin
reaches 6.0V, the over load protection is activated resulting in shutdown of the
TM
FPS
.
This pin is connected directly to the high voltage DC link. At startup, the internal
high voltage current source supplies internal bias and charges the external capacitor that is connected to the Vcc pin. Once Vcc reaches 12V , the internal current source is disabled.
FSDM0565RB
Pin Configuration
TO-220F-6L
6.Vstr
5.N.C.
4.Vfb
3.Vcc
2.GND
1.Drain
I2-PAK-6L
6.Vstr
5.N.C.
4.Vfb
3.Vcc
2.GND
1.Drain
Figure 3. Pin Configuration (Top View)
3
FSDM0565RB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter Symbol Value Unit
Drain-source voltage V
Vstr Max Voltage V
Pulsed Drain current (Tc=25
°C)
I
(1)
Continuous Drain Current(Tc=25°C)
Continuous Drain Current(Tc=100
Single pulsed avalanche energy
Single pulsed avalanche current
°C) 1.7 A
(2)
(3)
E
I
Supply voltage V
Input voltage range V
Total power dissipation(Tc=25
°C) P
(Watt H/S)
D
Operating junction temperature T
Operating ambient temperature T
Storage temperature range T
ESD Capability, HBM Model (All pins
excepts for Vstr and Vfb)
ESD Capability, Machine Model (All pins
excepts for Vstr and Vfb)
DSS
STR
DM
I
D
AS
AS
CC
FB
j
A
STG
-
-
(GND-Vstr/Vfb=1.5kV)
(GND-Vstr/Vfb=225V)
650 V
650 V
11 A
2.8 A
190 mJ
-A
20 V
-0.3 to V
CC
45
(TO-220-6L)
75
(I2-PAK-6L)
Internally limited °C
-25 to +85 °C
-55 to +150 °C
2.0
300
DC
V
W
kV
V
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=14mH, starting Tj=25°C
3. L=13uH, starting Tj=25°C
Thermal Impedance
Parameter Symbol Package Value Unit
Junction-to-Ambient Thermal
Junction-to-Case Thermal
Notes:
1. Free standing with no heat-sink under natural convection.
2. Infinite cooling condition - Refer to the SEMI G30-88.
(1)
θ
JA
(2)
θ
JC
TO-220F-6L 49.90
I2-PAK-6L 30
TO-220F-6L 2.78
I2-PAK-6L 1.67
°C/W
°C/W
4
Electrical Characteristics
(Ta = 25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Sense FET SECTION
FSDM0565RB
Drain source breakdown voltage BV
Zero gate voltage drain current I
Static drain source on resistance
(1)
R
DS(ON)
Output capacitance C
Turn on delay time T
D(ON)
Rise time T
Turn off delay time T
D(OFF)
Fall time T
CONTROL SECTION
Initial frequency F
Voltage stability F
Temperature stability
(2)
STABLE
ΔF
Maximum duty cycle D
V
DSS
DSS
OSS
R
F
OSC
= 0V, ID = 250μA 650 - - V
GS
V
= 650V, V
DS
V
= 520V
DS
V
= 0V, TC = 125°C
GS
V
= 10V, ID = 2.5A - 1.76 2.2 Ω
GS
V
= 0V, V
GS
f = 1MHz
VDD= 325V, ID= 5A
(MOSFET switching
time is essentially
independent of
operating temperature)
= 0V - - 500 μA
GS
- - 500 μA
= 25V,
DS
-78-pF
-22-
-52-
-95-
ns
-50-
VFB = 3V 60 66 72 kHz
13V ≤ Vcc ≤ 18V 0 1 3 %
OSC
MAX -778287%
-25°C ≤ Ta ≤ 85°C0±5±10%
Minimum duty cycle D
Start threshold voltage V
Stop threshold voltage V
START
STOP
Feedback source current I
Soft-start time T
Leading Edge Blanking time T
BURST MODE SECTION
V
Burst Mode Voltages
(2)
BURH
V
BURL
PROTECTION SECTION
Peak current limit
(4)
I
OVER
Over voltage protection V
Thermal shutdown temperature
(2)
T
Shutdown feedback voltage V
Shutdown delay current I
DELAY
MIN ---0%
VFB=GND 11 12 13 V
VFB=GND 7 8 9 V
FB
S
LEB
VFB=GND 0.7 0.9 1.1 mA
Vfb=3 - 10 15 ms
- - 250 - ns
Vcc=14V - 0.7 - V
Vcc=14V - 0.5 - V
VFB=5V, VCC=14V 2.0 2.25 2.5 A
OVP
SD
SD
VFB ≥ 5.5V 5.5 6.0 6.5 V
-181920V
130 145 160 °C
VFB=5V 2.8 3.5 4.2 μA
5
FSDM0565RB
TOTAL DEVICE SECTION
I
OP
Operating supply current
Notes:
1. Pulse test : Pulse width ≤ 300μS, duty ≤ 2%
2. These parameters, although guaranteed at the design, are not tested in mass production.
3. These parameters, although guaranteed, are tested in EDS(wafer test) process.
4. These parameters indicate the inductor current.
5. This parameter is the current flowing into the control IC.
(5)
OP(MIN)
I
OP(MAX)
VFB=GND, VCC=14V
VFB=GND, VCC=10V
VFB=GND, VCC=18V
-2.55mAI
6
FSDM0565RB
Comparison Between FS6M07652RTC and FSDM0565RB
Function FS6M07652RTC FSDM0565RB FSDM0565RB Advantages
Soft-Start Adjustable soft-start
time using an
external capacitor
Burst Mode Operation • Built into controller
• Output voltage
drops to around
half
Internal soft-start with
typically 10ms (fixed)
• Built into controller
• Output voltage fixed
• Gradually increasing current limit
during soft-start further reduces peak
current and voltage component
stresses
• Eliminates external components used
for soft-start in most applications
• Reduces or eliminates output
overshoot
• Improve light load efficiency
• Reduces no-load consumption
7
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