Fairchild FSBB15CH60, Motion SPM 3 Series User Manual
FSBB15CH60 Motion SPM® 3 Series
January 2014
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FSBB15CH60 Rev. C6
FSBB15CH60
Motion SPM® 3 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al
2O3
DBC Sub-
strate
• Dedicated Vs Pins Simplify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2500 V
rms
/ min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9035 - Motion SPM 3 Series Ver.2 User’s Guide
General Description
FSBB15CH60 is a Motion SPM® 3 module providing a
fully-featured, high-performance inverter output stage
for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs
to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, and fault reporting.
The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate
inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal IGBTs.
Separate negative IGBT terminals are available for each
phase to support the widest variety of control algorithms.
Package Marking and Ordering Information
Figure 1. Package Overview
Device Device Marking Package Packing Type Quantity
FSBB15CH60 FSBB15CH60 SPMCA-027 Rail 10
FSBB15CH60 Motion SPM® 3 Series
©2006 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FSBB15CH60 Rev. C6
Integrated Power Functions
• 600 V - 15 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 10 and 11.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
(21) N
U
(22) N
V
(23) N
W
(27) P
U
(25) V
(26) W
Case Temperature (T
C
)
Detecting Point
DBC Substrate
(21) N
U
(22) N
V
(23) N
W
(27) P
(24)
(25) V
(26) W
Case Temperature (T
C
)
Detecting Point
(1) V
CC(L)
(2) COM
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
(15) V
B(V)
(16) V
S(V)
(17) IN
(WH)
(18) V
CC(WH)
(19) V
B(W)
(20) V
S(W)
(7) C
FOD
(8) C
SC
(9) IN
(UH)
(10) V
CC(UH)
(11) V
B(U)
(12) V
S(U)
(13) IN
(VH)
(14) V
CC(VH)
(1) V
CC(L)
(2) COM
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
(15) V
B(V)
(16) V
S(V)
(17) IN
(WH)
(18) V
CC(WH)
(19) V
B(W)
(20) V
S(W)
(7) C
FOD
(8) C
SC
(9) IN
(UH)
(10) V
CC(UH)
(11) V
B(U)
(12) V
S(U)
(13) IN
(VH)
(14) V
CC(VH)
13.7
19.2
(21) N
U
(22) N
V
(23) N
W
(27) P
U
(25) V
(26) W
Case Temperature (T
C
)
Detecting Point
DBC Substrate
(21) N
U
(22) N
V
(23) N
W
(27) P
(24)
(25) V
(26) W
Case Temperature (T
C
)
Detecting Point
(1) V
CC(L)
(2) COM
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
(15) V
B(V)
(16) V
S(V)
(17) IN
(WH)
(18) V
CC(WH)
(19) V
B(W)
(20) V
S(W)
(7) C
FOD
(8) C
SC
(9) IN
(UH)
(10) V
CC(UH)
(11) V
B(U)
(12) V
S(U)
(13) IN
(VH)
(14) V
CC(VH)
(1) V
CC(L)
(2) COM
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
(15) V
B(V)
(16) V
S(V)
(17) IN
(WH)
(18) V
CC(WH)
(19) V
B(W)
(20) V
S(W)
(7) C
FOD
(8) C
SC
(9) IN
(UH)
(10) V
CC(UH)
(11) V
B(U)
(12) V
S(U)
(13) IN
(VH)
(14) V
CC(VH)
(1) V
CC(L)
(2) COM
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
(15) V
B(V)
(16) V
S(V)
(17) IN
(WH)
(18) V
CC(WH)
(19) V
B(W)
(20) V
S(W)
(7) C
FOD
(8) C
SC
(9) IN
(UH)
(10) V
CC(UH)
(11) V
B(U)
(12) V
S(U)
(13) IN
(VH)
(14) V
CC(VH)
(1) V
CC(L)
(2) COM
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
(15) V
B(V)
(16) V
S(V)
(17) IN
(WH)
(18) V
CC(WH)
(19) V
B(W)
(20) V
S(W)
(7) C
FOD
(8) C
SC
(9) IN
(UH)
(10) V
CC(UH)
(11) V
B(U)
(12) V
S(U)
(13) IN
(VH)
(14) V
CC(VH)
13.7
19.2
13.7
19.2
FSBB15CH60 Motion SPM® 3 Series
©2006 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FSBB15CH60 Rev. C6
Pin Descriptions
Pin Number Pin Name Pin Description
1V
CC(L)
Low-Side Common Bias Voltage for IC and IGBTs Driving
2 COM Common Supply Ground
3IN
(UL)
Signal Input for Low-Side U-Phase
4IN
(VL)
Signal Input for Low-Side V-Phase
5IN
(WL)
Signal Input for Low-Side W-Phase
6V
FO
Fault Output
7C
FOD
Capacitor for Fault Output Duration Selection
8C
SC
Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input
9IN
(UH)
Signal Input for High-Side U-Phase
10 V
CC(UH)
High-Side Bias Voltage for U-Phase IC
11 V
B(U)
High-Side Bias Voltage for U-Phase IGBT Driving
12 V
S(U)
High-Side Bias Voltage Ground for U-Phase IGBT Driving
13 IN
(VH)
Signal Input for High-Side V-Phase
14 V
CC(VH)
High-Side Bias Voltage for V-Phase IC
15 V
B(V)
High-Side Bias Voltage for V-Phase IGBT Driving
16 V
S(V)
High-Side Bias Voltage Ground for V-Phase IGBT Driving
17 IN
(WH)
Signal Input for High-Side W Phase
18 V
CC(WH)
High-Side Bias Voltage for W-Phase IC
19 V
B(W)
High-Side Bias Voltage for W-Phase IGBT Driving
20 V
S(W)
High-Side Bias Voltage Ground for W-Phase IGBT Driving
21 N
U
Negative DC-Link Input for U-Phase
22 N
V
Negative DC-Link Input for V-Phase
23 N
W
Negative DC-Link Input for W-Phase
24 U Output for U-Phase
25 V Output for V-Phase
26 W Output for W-Phase
27 P Positive DC-Link Input
FSBB15CH60 Motion SPM® 3 Series
©2006 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FSBB15CH60 Rev. C6
Internal Equivalent Circuit and Input/Output Pins
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
COM
VCC
IN(UL )
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
NU (21)
N
V
(22)
N
W
(23)
U (24)
V (25)
W (26)
P (27)
(20) V
S(W)
(19) V
B(W)
(16) V
S(V)
(15) V
B(V)
(8) C
SC
(7) C
FOD
(6) V
FO
(5) IN
(WL)
(4) IN
(VL)
(3) IN
(UL)
(2) COM
(1) V
CC(L)
VCC
VB
OUT
COM
VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM
VS
IN
(18) V
CC(WH)
(17) IN
(WH)
(14) V
CC(VH)
(13) IN
(VH)
(12) V
S(U)
(11) V
B(U)
(10) V
CC(UH)
(9) IN
(UH)
V
SL
FSBB15CH60 Motion SPM® 3 Series
©2006 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FSBB15CH60 Rev. C6
Absolute Maximum Ratings (T
J
= 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM
®
3 product is 150C (at TC 100C). However, to insure safe operation of the
Motion SPM 3 product, the average junction temperature should be limited to T
J(ave)
125C (at TC 100C)
Control Part
Total System
Thermal Resistance
2nd Notes:
2. For the measurement point of cas e temperature(TC), please refer to Figure 2.
Symbol Parameter Conditions Rating Unit
V
PN
Supply Voltage Applied between P- NU, NV, N
W
450 V
V
PN(Surge)
Supply Voltage (Surge) Applied between P- NU, NV, N
W
500 V
V
CES
Collector - Emitter Voltage 600 V
± I
C
Each IGBT Collector Current TC = 25°C 15 A
± I
CP
Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 30 A
P
C
Collector Dissipation TC = 25°C per Chip 50 W
T
J
Operating Junction Temperature (2nd Note 1) -20 ~ 125 °C
Symbol Parameter Conditions Rating Unit
V
CC
Control Supply Voltage Applied between V
CC(UH)
, V
CC(VH)
, V
CC(WH)
, V
CC(L)
-
COM
20 V
V
BS
High-Side Control Bias
Voltage
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
20 V
V
IN
Input Signal Voltage Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, IN
(UL)
, IN
(VL)
,
IN
(WL)
- COM
-0.3 ~ 17 V
V
FO
Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC+0.3 V
I
FO
Fault Output Current Sink Current at VFO Pin 5 mA
V
SC
Current-Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC+0.3 V
Symbol Parameter Conditions Rating Unit
V
PN(PROT)
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5 V
T
J
= 125°C, Non-Repetitive, < 2 s
400 V
T
C
Module Case Operation Temperature -20CTJ 125C, See Figure 2 -20 ~ 100 °C
T
STG
Storage Tempera ture -40 ~ 125 °C
V
ISO
Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
2500 V
rms
Symbol Parameter Condition Min. Typ. Max. Unit
R
th(j-c)Q
Junction to Case Thermal
Resistance
Inverter IGBT Part (per 1 / 6 module) - - 2.02 °C/W
R
th(j-c)F
Inverter FWD Part (per 1 / 6 module) - - 3.15 °C/W
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