Fairchild FSB660, FSB660A service manual

FSB660/FSB660A



FSB660 / FSB660A

C

E
B

SuperSOTTM-3 (SOT-23)

PNP Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 2A

continuous.

Absolute Maximum Ratings* T

ParameterSymbol

V

CEO

V

CBO

V

EBO

I

C

T

J, Tstg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

A = 25°C unless otherwise noted

FSB660/FSB660A

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T

Symbol

P

D

R

θJA

A = 25°C unless otherwise noted

Max

Characteristic

FSB660/FSB660A

Units

V60Collector-Emitter Voltage
V60Collector-Base Voltage

V5Emitter-Base Voltage
A2Collector Current - Continuous

°C-55 to +150Operating and Storage Junction Temperature Range

Units

mW500Total Device Dissipation

°C/W250Thermal Resistance, Junction to Ambient

2001 Fairchild Semiconductor Corporation FSB660/FSB660A Rev. B1

ON

CHARACTERISTICS

*

PNP Low Saturation Transistor

FSB660/FSB660A

(continued)

Electrical Characteristics T

OFF CHARACTERISTICS

BV
BV
BV
I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

V

BE(on)

CEO

CBO

EBO

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage
Base-Emitter On Voltage

A = 25°C unless otherwise noted

I

= 10 mA

C

I

= 100 µA

C

I

= 100 µA

E

V

= 30 V

CB

V

= 30 V, TA=100°C

CB

V

= 4V

EB

= 100 mA, VCE = 2 V

I

C

I

=500mA, VCE =2V FSB660

C

FSB660A
I

= 1 A, VCE = 2 V

C

I

= 2 A, VCE = 2 V

C

= 1 A, IB = 100 mA

I

C

I

= 2 A, IB=200 mA FSB660

C

FSB660A
I

= 1 A, IB = 100 mA

C

= 1 A, VCE = 2 V

I

C

70
100
250

80

40

100

10

100

300
550

350
300

UnitsMaxMinTest ConditionsParameterSymbol

V60
V60
V5

nA
uA

nA

-

mV300

V1.25
V1

SMALL SIGNAL CHARACTERISTICS

C

obo

f

T

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Output Capacitance
Transition Frequency

V

= 10 V, IE = 0, f = 1MHz

CB

I

= 100 mA,VCE = 5 V, f=100MHz

C

pF30

- 75

FSB660/FSB660A Rev. B1