Fairchild FQD8P10, FQU8P10 service manual
FQD8P10 / FQU8P10
100V P-Channel MOSFET
FQD8P10 / FQU8P10
TM
QFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
Features
• -6.6A, -100V, R
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
= 0.53Ω @VGS = -10 V
DS(on)
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
D
GS
D
D-PAK
FQD Series
GSD
I-PAK
FQU Series
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQD8P10 / FQU8P10 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage -100 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
-6.6 A
-4.2 A
-26.4 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
150 mJ
-6.6 A
4.4 mJ
-6.0 V/ns
2.5 W
44 W
- Derate above 25°C 0.35 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2002 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 2.84 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
Rev. B, August 2002
FQD8P10 / FQU8P10
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Te st Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = -250 µA
V
GS
I
= -250 µA, Referenced to 25°C
D
V
= -100 V, VGS = 0 V
DS
V
= -80 V, TC = 125°C
DS
V
= -30 V, VDS = 0 V
GS
= 30 V, VDS = 0 V
V
GS
-100 -- -- V
-- -0.1 -- V/°C
-- -- -1 µA
-- -- -10 µA
-- -- -100 nA
-- -- 100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = -250 µA
DS
= -10 V, ID = -3.3 A
V
GS
= -40 V, ID = -3.3 A
V
DS
(Note 4)
-2.0 -- -4.0 V
-- 0.41 0.53 Ω
-- 4.1 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 120 155 pF
Reverse Transfer Capacitance -- 30 40 pF
= -25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 360 470 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 110 230 ns
Turn-Off Delay Time -- 20 50 ns
Turn-Off Fall Time -- 35 80 n s
Total Gate Charge
Gate-Source Charge -- 3.0 -- nC
Gate-Drain Charge -- 6.4 -- nC
= -50 V, ID = -8.0 A,
V
DD
= 25 Ω
R
G
V
= -80 V, ID = -8.0 A,
DS
V
GS
= -10 V
(Note 4, 5)
(Note 4, 5)
-- 11 30 ns
-- 12 15 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = -6.6A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -8.0A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- -6.6 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -26.4 A
= 0 V, IS = -6.6 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.35 -- µC
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = -8.0 A,
V
GS
/ dt = 100 A/µs
dI
F
-- -- -4.0 V
-- 98 -- ns
(Note 4)
Rev. B, August 2002
Typical Characteristics
V
GS
Top : -15.0 V
1
10
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
-5.0 V
0
10
Botto m : -4.5 V
-1
, Drain Current [A]
10
D
-I
-2
10
-1
10
0
10
-VDS, Drain-Source Voltage [V]
※
Notes :
1. 250μs Pulse Test
℃
2. T
= 25
C
1
10
FQD8P10 / FQU8P10
1
10
℃
0
10
, Drain Current [A]
D
-I
-1
10
2
150
℃
25
℃
-55
46810
※
Notes :
1. V
= -40V
DS
2. 250μs Pulse Test
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
1.5
1.2
0.9
[Ω],
DS(on)
R
0.6
Drain-Source On-Resistance
0.3
0.0
0 5 10 15 20 25
VGS = - 10V
VGS = - 20V
※
-ID , Drain Curren t [A]
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
900
800
700
600
500
400
300
Capacitance [pF]
200
100
0
-1
10
C
oss
C
iss
C
rss
-VDS, Drain-Source Voltage [V]
C
= C
iss
= Cds + C
C
oss
C
= C
rss
0
10
10
Note : T
= 25
J
+ Cgd (Cds = shorted)
gs
gd
gd
※
Notes :
= 0 V
1. V
GS
2. f = 1 MH z
1
1
10
℃
0
10
℃
25
℃
, Reve rs e D ra in Current [A ]
150
DR
-I
-1
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
※
Notes :
= 0V
1. V
GS
2. 250μs Pulse Test
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
-V
0
0 2 4 6 8 10 12 14
QG, Tota l Gate Charge [n C]
VDS = -20V
VDS = -50V
VDS = -80V
※
Note : ID = -8.0 A
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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