Fairchild FQPF6N80T service manual

FQPF6N80T

800V N-Channel MOSFET

FQPF6N80T

TM

QFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

TO-220F Potted

GSD

Absolute Maximum Ratings T

FQPF Series

= 25°C unless otherwise noted

C

Features

• 3.3A, 800V, R

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 14 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 100% package isolation tested (Note 6)

G

{

= 1.95Ω @VGS = 10 V

DS(on)

D

{

z





z

z z

z

{

S

Symbol Parameter FQPF6N80T Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt P

D

Drain-Source Voltage 800 V

Drain Current

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

3.3 A

2.1 A

13.2 A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)

(Note 1)

(Note 3)

680 mJ

3.3 A

5.1 mJ

4.0 V/ns

51 W

- Derate above 25°C 0.41 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes, 1/8∀ from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case -- 2.45 °C/W

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

FQPF6N80T

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 800 V, VGS = 0 V

DS

V

= 640 V, TC = 125°C

DS

= 30 V, VDS = 0 V

V

GS

= -30 V, VDS = 0 V

V

GS

800 -- -- V

-- 0.9 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

= VGS, ID = 250 µA

V

DS

V

= 10 V, ID = 1.65 A

GS

= 50 V, ID = 1.65 A (Note 4)

V

DS

3.0 -- 5.0 V

-- 1.5 1.95 Ω

-- 4.3 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 125 160 pF

Reverse Transfer Capacitance -- 14 18 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 1150 1500 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 70 150 ns

Turn-Off Delay Time -- 65 140 ns

Turn-Off Fall Time -- 45 100 ns

Total Gate Charge

Gate-Source Charge -- 7.1 -- nC

Gate-Drain Charge -- 15 -- nC

= 400 V, ID = 5.8 A,

V

DD

R

= 25 Ω

G

( Note 4,5)

V

= 640 V, ID = 5.8 A,

DS

= 10 V

V

GS

( Note 4,5)

-- 30 70 ns

-- 31 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 117mH, I

3. I

SD

4. Pulse Test : Pulse width ϒℜ 300µs, Duty cycle ϒℜ 2%

5. Essentially independent of operating temperature

6. Viso=4000V, t=0.3s in single pulse, UL recognized

Maximum Continuous Drain-Source Diode Forward Current -- -- 3.3 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 13.2 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge -- 5.7 -- µC

= 3.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

AS

ϒℜ 5.8A, di/dt ϒℜ 200A/µs, VDD ϒℜ BV

Starting TJ = 25°C

DSS,

= 0 V, IS = 3.3 A

V

GS

V

= 0 V, IS = 5.8 A,

GS

/ dt = 100 A/µs (Not e 4)

dI

F

-- -- 1.4 V

-- 650 -- ns

Rev. A1 October 2009

Typical Characteristics

FQPF6N80T

1

V Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Bottom : 5.5 V

0

-1

10

GS

Notes :∝

1. 250レs Pulse Test

2. T

0

10

, Drain Current [A]

D

I

10

VDS, Drain-Source Voltage [V]

4

3

[ヘ ],

2

DS(ON)

R

1

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

0

0 4 8 12 16

ID, Drain Current [A]

= 25∩

C

1

Note : T∝J = 25∩

1

10

150oC

0

10

25oC

-55oC

, Drain Current [A]

D

I

-1

10

246810

Notes :∝

1. VDS = 50V

レs Pulse Test

2. 250

VGS, Gate-Source Volt age [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.20.40.60.81.01.2

150∩

25∩

Notes :∝

1. VGS = 0V

2. 250

レs Pulse Test

VSD, Source- Drain voltag e [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

2000

1800

1600

1400

1200

1000

800

600

Capacitance [pF]

400

200

0

-1

10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

C C C

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Vol tage [V]

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

gd

= C

rss

gd

Notes :∝

1. VGS = 0 V

2. f = 1 MHz

1

10

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30 35

VDS = 160V

VDS = 400V

VDS = 640V

Note : I∝D = 5.8A

QG, Total Gate Charge [nC]

Rev. A1 October 2009

Fairchild FQPF6N80T service manual

Specifications and Main Features

Frequently Asked Questions

User Manual

FQPF6N80T

800V N-Channel MOSFET

Thermal Characteristics

Typical Characteristics

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics