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FQPF6N80T
Datasheet (Fairchild)
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Datasheet FQPF6N80T Datasheet (Fairchild)

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FQPF6N80T

800V N-Channel MOSFET

FQPF6N80T
TM
QFET
General Description
TO-220F Potted
GSD
Absolute Maximum Ratings T
FQPF Series
= 25°C unless otherwise noted
C
Features
• 3.3A, 800V, R
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 14 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 100% package isolation tested (Note 6)
G
{
{
= 1.95Ω @VGS = 10 V
DS(on)
D
{
{
z
z
z
z z
z
{
{
S
Symbol Parameter FQPF6N80T Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt P
D
Drain-Source Voltage 800 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
3.3 A
2.1 A
13.2 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
680 mJ
3.3 A
5.1 mJ
4.0 V/ns
51 W
- Derate above 25°C 0.41 W/°C
T
, T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes, 1/8∀ from case for 5 seconds
300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units
R
θJC
R
θJA
©2002 Fairchild Semiconductor Corporation Rev. A1 October 2009
Thermal Resistance, Junction-to-Case -- 2.45 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
FQPF6N80T
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 800 V, VGS = 0 V
DS
V
= 640 V, TC = 125°C
DS
= 30 V, VDS = 0 V
V
GS
= -30 V, VDS = 0 V
V
GS
800 -- -- V
-- 0.9 -- V/°C
-- -- 10 µA
-- -- 100 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
= VGS, ID = 250 µA
V
DS
V
= 10 V, ID = 1.65 A
GS
= 50 V, ID = 1.65 A (Note 4)
V
DS
3.0 -- 5.0 V
-- 1.5 1.95 Ω
-- 4.3 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 125 160 pF
Reverse Transfer Capacitance -- 14 18 pF
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 1150 1500 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 70 150 ns
Turn-Off Delay Time -- 65 140 ns
Turn-Off Fall Time -- 45 100 ns
Total Gate Charge
Gate-Source Charge -- 7.1 -- nC
Gate-Drain Charge -- 15 -- nC
= 400 V, ID = 5.8 A,
V
DD
R
= 25 Ω
G
( Note 4,5)
V
= 640 V, ID = 5.8 A,
DS
= 10 V
V
GS
( Note 4,5)
-- 30 70 ns
-- 31 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 117mH, I
3. I
SD
4. Pulse Test : Pulse width ϒℜ 300µs, Duty cycle ϒℜ 2%
5. Essentially independent of operating temperature
6. Viso=4000V, t=0.3s in single pulse, UL recognized
©2002 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 3.3 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 13.2 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 5.7 -- µC
= 3.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
AS
ϒℜ 5.8A, di/dt ϒℜ 200A/µs, VDD ϒℜ BV
Starting TJ = 25°C
DSS,
= 0 V, IS = 3.3 A
V
GS
V
= 0 V, IS = 5.8 A,
GS
/ dt = 100 A/µs (Not e 4)
dI
F
-- -- 1.4 V
-- 650 -- ns
Rev. A1 October 2009

Typical Characteristics

FQPF6N80T
1
V Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V Bottom : 5.5 V
0
-1
-1
10
GS
Notes :∝
1. 250レs Pulse Test
2. T
0
10
10
10
10
, Drain Current [A]
D
I
10
VDS, Drain-Source Voltage [V]
4
3
[ヘ ],
2
DS(ON)
R
1
VGS = 10V
VGS = 20V
Drain-Source On-Resistance
0
0 4 8 12 16
ID, Drain Current [A]
= 25∩
C
1
Note : T∝J = 25∩
1
10
150oC
0
10
25oC
-55oC
, Drain Current [A]
D
I
-1
10
246810
Notes :∝
1. VDS = 50V
レs Pulse Test
2. 250
VGS, Gate-Source Volt age [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.20.40.60.81.01.2
150∩
25∩
Notes :∝
1. VGS = 0V
2. 250
レs Pulse Test
VSD, Source- Drain voltag e [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1800
1600
1400
1200
1000
800
600
Capacitance [pF]
400
200
0
-1
10

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2002 Fairchild Semiconductor Corporation
C C C
C
iss
C
oss
C
rss
0
10
VDS, Drain-Source Vol tage [V]
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
oss
gd
= C
rss
gd
Notes :∝
1. VGS = 0 V
2. f = 1 MHz
1
10
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25 30 35
VDS = 160V
VDS = 400V
VDS = 640V
Note : I∝D = 5.8A
QG, Total Gate Charge [nC]
Rev. A1 October 2009

Typical Characteristics (Continued)

FQPF6N80T
1.2
1.1
1.0
, (Normalized)
DSS
BV
0.9
Drain-Source Breakdown Voltage
0.8
-100 - 50 0 50 100 150 200
Notes :∝
1. VGS = 0 V
2. I
TJ, Junct ion Temperature [oC]

Figure 7. Breakdown Voltage Variation

vs Temperature

Operation in This Area is Limited by R
1. TC = 25 oC
2. T
3. Single Pulse
1
Notes :∝
= 150 oC
J
DS(on)
100
1 ms
10 ms
100 ms
DC
2
10
, Drain Current [A] I
1
10
0
10
D
-1
10
-2
10
0
10
10
VDS, Drai n-Source Voltage [ V]
= 250 レA
D
レs
3.0
2.5
2.0
1.5
, (Normalized)
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 50 100 150 200
Notes :∝
1. VGS = 10 V = 2.9 A
2. I
D
TJ, Juncti on Temperature [oC]

Figure 8. On-Resistance Variation

vs Temperature

3.5
3.0
2.5
2.0
1.5
, Drain Current [A]
1.0
D
I
0.5
3
10
0.0 25 50 75 100 125 150
TC, Case Temperature [∩ ]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs Case Temperature

D=0.5
0
10
0.2
0.1
0.05
-1
10
0.02
0.01
(t), Thermal Response
ヨJC
Z
-2
10
-5
10
single pulse
-4
10
-3
10
-2
10
Notes :∝
1. Z
(t) = 2.45 ∩ /W M ax.
ヨ JC
2. D uty F ac tor , D =t
3. TJM - TC = PDM * Z
P
DM
t
1
t
2
-1
10
10
1/t2
(t)
ヨ JC
0
1
10
t1, S q ua re W av e P uls e D u ra tion [s e c]

Figure 11. Transient Thermal Response Curve

©2002 Fairchild Semiconductor Corporation Rev. A1 October 2009
12V
)
)
12V
200nF
200nF
3mA
3mA
50KΩ
50KΩ
V
V

Gate Charge Test Circuit & Waveform

Same Type
Same Type
as DUT
as DUT
300nF
300nF
V
V
DS
GS
GS
DUT
DUT
DS

Resistive Switching Test Circuit & Waveforms

V
V
GS
GS
10V
10V
FQPF6N80T
Q
Q
g
g
Q
Q
gs
gs
Q
Q
gd
gd
Charge
Charge
10V
10V
10V
10V
R
R
L
DUT
DUT
L
V
V
DD
DD
V
V
DS
DS
V
V
GS
GS
R
R
G
G
V
V
DS
DS
90%
90%
10%
10%
V
V
GS
GS
t
t
d(on)tr
d(on)tr
t
t
on
on
t
t
d(off)
d(off)
t
t
f
f
t
t
off
off

Unclamped Inductive Switching Test Circuit & Waveforms

BV
BV
DSS
BV
BV
DSS-VDD
DSS-VDD
DSS
Time
Time
V
(t
V
(t
DS
DS
L
LL
V
V
DS
DS
BV
BV
DSS
V
V
DSS
I
I
AS
AS
DD
DD
I
IDI
D
D
R
R
G
G
DUT
DUT
t
t
p
p
V
V
DD
DD
E
E
E
AS
AS
AS
1
1
1
1
----
----
----
----
=LI
=LI
=LI
2
2
2
2
AS
AS
AS
ID (t)
ID (t)
2
2
2
t
t
p
p
--------------------
--------------------
©2002 Fairchild Semiconductor Corporation
Rev. A1 October 2009

Peak Diode Recovery dv/dt Test Circuit & Waveforms

g
g
+
+
V
V
DS
DS
_
_
L
LL
Same Type
Same Type
as DU T
as DU T
• dv/dt controlled by R
• dv/dt controlled by R
•ISDcontrolled by pulse period
•ISDcontrolled by pulse period
G
G
V
V
GS
GS
R
R
G
G
DUT
DUT
I
I
SD
SD
Driver
Driver
V
V
DD
DD
FQPF6N80T
V
V
GS
GS
( D riv e r )
( D riv e r )
I
I
SD
SD
( DUT )
( DUT )
V
V
DS
DS
( DUT )
( DUT )
G ate Pulse W idth
G ate Pulse W idth
G ate Pulse W idth
--------------------------
--------------------------
--------------------------
D =
D =
D =
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
IFM, Body D iode Forw ard C urrent
IFM, Body D iode Forw ard C urrent
I
I
RM
RM
Body D iode R everse C urrent
Body D iode R everse C urrent
Body D iode R ecovery dv/dt
Body D iode R ecovery dv/dt
V
V
SD
SD
Body D iode
Body D iode
e D rop
Forw ard Volta
Forw ard Volta
e D rop
di/dt
di/dt
10V
10V
V
V
DD
DD
©2002 Fairchild Semiconductor Corporation Rev. A1 October 2009
Package Dimensions
0
0
TO-220F Potted
10.16 ±0.20
ø3.18 ±0.10
2.54
FQPF6N80T
±0.20
(7.00)
(0.70)
3.30 ±0.1
6.68 ±0.20
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
MAX1.47
0.80 ±0.10
9.75 ±0.30
(30°)
0.35 ±0.10
2.54TYP
[2.54
±0.20]
#1
9.40 ±0.20
2.54TYP
[2.54
±0.20]
4.70 ±0.20
0.50
+0.10 –0.05
2.76 ±0.2
Dimensions in Millimeters
Rev. A1 October 2009©2002 Fairchild Semiconductor Corporation
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
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Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
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Rev. I41
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