Page 1
FQT1N80TF_WS
D
G
S
SOT-223
FQT Series
G
D
S
N-Channel MOSFET
800V, 0.2A, 20Ω
FQT1N80TF_WS N-Channel MOSFET
August 2011
®
QFET
Features
• R
• Low gate charge ( Typ. 5.5nC)
• Low Crss ( Typ. 2.7pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns
P
D
TJ, T
T
L
= 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A
DS(on)
= 25oC unless otherwise noted*
C
Symbol Parameter FQT1N80TF_WS Units
Drain to Source Voltage 800 V
Gate to Source Voltage ±30 V
-Continuous (TC = 25oC) 0.2
-Continuous (TC = 100oC) 0.12
(TC = 25oC) 2.1 W
- Derate above 25oC 0.02 W/oC
STG
Drain Current
Drain Current - Pulsed (Note 1) 0.8 A
Single Pulsed Avalanche Energy (Note 2) 90 mJ
Avalanche Current (Note 1) 0.2 A
Repetitive Avalanche Energy (Note 1) 0.2 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
o
300
o
A
C
C
Thermal Characteristics
Symbol Parameter
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2011 Fairchild Semiconductor Corporation
FQT1N80TF_WS Rev. C0
Thermal Resistance, Junction to Ambient* - 60
Min. Max.
www.fairchildsemi.com1
Units
o
C/W
Page 2
FQT1N80TF_WS N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FQT1N80 FQT1N80TF_WS SOT-223 330mm 12mm 4000
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 800 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
ID = 250µA, Referenced to 25oC - 0.8 - V/oC
VDS = 800V, V
= 0V - - 25
GS
VDS = 640V, TC = 125oC - - 250
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250µA 3.0 - 5.0 V
Static Drain to Source On Resistance VGS = 10V, I
= 0.1A - 15.5 20 Ω
D
Forward Transconductance VDS = 40V, ID = 0.1A (Note 4) - 0.75 - S
Input Capacitance
Output Capacitance - 20 30 pF
Reverse Transfer Capacitance - 2.7 5.0 pF
VDS = 25V, VGS = 0V
f = 1MHz
Total Gate Charge at 10V
Gate to Source Gate Charge - 1.1 - nC
Gate to Drain “Miller” Charge - 3.3 - nC
VDS = 640V, ID = 1A
VGS = 10V
(Note 4, 5)
- 150 195 pF
- 5.5 7.2 nC
µA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 25 60 ns
Turn-Off Delay Time - 15 40 ns
Turn-Off Fall Time - 25 60 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 170mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 1A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 0.2 A
Maximum Pulsed Drain to Source Diode Forward Current - - 0.8 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.6 - µC
, Starting TJ = 25°C
DSS
VDD = 400V, ID = 1A
RG = 25Ω
(Note 4, 5)
= 0V, I
GS
VGS = 0V, I
= 0.2A - - 1.4 V
SD
= 1A
SD
dIF/dt = 100A/µs (Note 4)
- 10 30 ns
- 300 - ns
FQT1N80TF_WS Rev. C0
2
www.fairchildsemi.com
Page 3
Typical Performance Characteristics
10
-1
10
0
10
1
10
-2
10
-1
10
0
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :※
1. 250µs Pulse Test
2. TC = 25℃
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
2 4 6 8 10
10
-1
10
0
150oC
25oC
-55oC
Notes :※
1. VDS = 50V
2. 250µ s Pulse Test
I
D
, Drain Current [A]
VGS, Gate-Source Voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
20
30
40
50
VGS = 20V
VGS = 10V
Note : T※J = 25℃
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2
10
-1
10
0
150℃
Notes :※
1. VGS = 0V
2. 250µ s Pulse Test
25℃
I
DR
, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
10
-1
10
0
10
1
0
50
100
150
200
250
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
Notes :※
1. VGS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 1 2 3 4 5 6
0
2
4
6
8
10
12
VDS = 400V
VDS = 160V
VDS = 640V
Note : I※D = 1.0 A
V
GS
, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FQT1N80TF_WS N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FQT1N80TF_WS Rev. C0
3
www.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :※
1. VGS = 0 V
2. ID = 250 µA
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :※
1. VGS = 10 V
2. ID = 0.1 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
I
D
, Drain Current [A]
TC, Case Temperature [°C]
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
100 ms
1 ms
1 s
DC
10 ms
100 µs
Operation in This Area
is Limited by R
DS(on)
Notes :※
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
2
1 0
3
1 0
-1
1 0
0
1 0
1
1 0
2
N o te s :※
1 . Z
θ JC
(t ) = 60 / W M a x.℃
2 . D u ty F a cto r , D = t1/t
2
3 . TJM - TC = PDM * Z
θ JC
(t )
s in gl e p ul se
D = 0. 5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
θ JC
(t), Thermal Response
t1, S q u a re W a ve P u ls e D u ra tio n [s ec ]
t
1
P
DM
t
2
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
FQT1N80TF_WS N-Channel MOSFET
Figure 11. Transient Thermal Response Curve
FQT1N80TF_WS Rev. C0
4
www.fairchildsemi.com
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQT1N80TF_WS N-Channel MOSFET
FQT1N80TF_WS Rev. C0
5
www.fairchildsemi.com
Page 6
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
• ISDcontrolled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
• ISDcontrolled by pulse period
V
DD
L
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
IFM, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
FQT1N80TF_WS N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQT1N80TF_WS Rev. C0
6
www.fairchildsemi.com
Page 7
Mechanical Dimensions
3.00 ±0.10
7.00 ±0.30
0.65 ±0.20
0.08MAX
3.50
±0.20
(0.46)
(0.89)
(0.60) (0.60)
1.75
±0.20
0.70 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.95) (0.95)
2.30 TYP
0.25
MAX1.80
0
°
~10
°
+0.10
–0.05
0.06
+0.04
–0.02
FQT1N80TF_WS N-Channel MOSFET
SOT-223
FQT1N80TF_WS Rev. C0
7
www.fairchildsemi.com
Page 8
TRADEMARKS
®
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
Auto-SPM™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
®
®
EfficentMax™
ESBC™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
®
FlashWriter® *
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
SM
Programmable Active Droop™
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QS™
®
®
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
®
®
Sync-Lock™
®*
The Power Franchise
The Right Technology for Your Success™
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
TranSiC
TriFault Detect™
TRUECURRENT®*
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
FQT1N80TF_WS N-Channel MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FQT1N80TF_WS Rev. C0
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Rev. I55
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