Fairchild FDT434P service manual
FDT434P
FDT434P
P-Channel 2.5V Specified PowerTrench
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Applications
• Low Dropout Regulator
• DC/DC converter
• Load switch
• Motor driving
D
April 2011
MOSFET
Features
• –5.5 A, –20 V. R
R
• Low gate charge (13nC typical)
• High performance trench technology for extremely
DS(ON)
.
low R
• High power and current handling capability in a
widely used surface mount package.
= 0.050 Ω @ VGS = –4.5 V
DS(ON)
= 0.070 Ω @ VGS = –2.5 V.
DS(ON)
D
S
D
SOT-2 23
G
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
SG
D
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –6 A
– Pulsed –30
PD
TJ, T
stg
Power Dissipation for Single Operation (Note 1a) 3
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
(Note 1c)
±8
1.3
1.1
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 42
(Note 1) 12
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
434 FDT434P 13’’ 12mm 2500 units
©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
1
www.fairchildsemi.com
FDT434P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage Current,
= 0 V, ID = –250 µA
V
GS
I
= –250 µA,Referenced to 25°C
D
VGS = 8 V, VDS = 0 V 100 nA
Forward
I
Gate–Body Leakage Current,
GSSR
VGS = –8 V VDS = 0 V –100 nA
Reverse
–20 V
–28
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A
D(on)
= VGS, ID = –250 µA
V
DS
I
= –250 µA,Referenced to 25°C
D
VGS = –4.5 V, ID = –6 A
V
= –2.5 V, ID = –4 A
GS
= –4.5 V, ID = –6 A TJ=125°C
V
GS
gFS Forward Transconductance VDS = –10 V, ID = –6 A 6.5 S
–0.4 –0.6 –1 V
2
0.040
0.050
0.067
0.050
0.070
0.083
mV/°C
Ω
Dynamic Characteristics
C
Input Capacitance 1187 pF
iss
C
Output Capacitance 270 pF
oss
C
Reverse Transfer Capacitance
rss
= –10 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
114 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 8 16 ns
d(on)
tr Turn–On Rise Time 15 25 ns
t
Turn–Off Delay Time 45 65 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 13 19 nC
Qgs Gate–Source Charge 1.8 nC
Qgd Gate–Drain Charge
= –5 V, ID = –1 A,
V
DD
= –4.5 V, R
V
GS
= –10 V, ID = –6 A,
V
DS
V
= –4.5 V
GS
GEN
= 6 Ω
30 50 ns
3 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.5 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
a) 42°C/W when
mounted on a 1in
pad of 2 oz copper
is determined by the user's board design.
θCA
2
VGS = 0 V, IS = –2.5 A (Note 2) –0.75 –1.2 V
b) 95°/W when mounted
on a .0066 in2 pad of
2 oz copper
c) 110°/W when mounted on a
mini mum pa d.
©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
2
www.fairchildsemi.com
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