FDT3612
FDT3612
100V N-Channel PowerTrench
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PW M controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications. The result is a MOSFET that is
DS(ON)
easy and safer to drive (even at very high frequenc ies),
and DC/DC power supply designs with higher overall
efficiency.
Applications
• DC/DC converter
• Motor driving
MOSFET
D
February 2012
Features
• 3.7 A, 100 V. R
R
• Fast switching speed
• Low gate charge (14nC typ)
• High performance trench technology for extremely
DS(ON)
low R
• High power and current handling capability in a
widely used surface mount pac kage
= 120 mΩ @ VGS = 10 V
DS(ON)
= 130 mΩ @ VGS = 6 V
DS(ON)
D
D
S
SOT-22 3
D
G
SG
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
D
SOT-223
(J23Z)
S
G
*
G
S
Symbol Parameter Ratings Units
V
Drain-Source Voltage 100 V
DSS
V
Gate-Source Voltage
GSS
±20
V
ID Drain Current – Continuous (Note 1a) 3.7 A
– Pulsed 20
PD
Maximum Power Dissipation (Note 1a) 3.0
(Note 1b)
TJ, T
Operating and Storage Junction Temperature Range –55 to +150
STG
(Note 1c)
1.3
1.1
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 42
(Note 1) 12
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
3612 FDT3612 13’’ 12mm 2500 units
2012 Fairchild Semiconductor Corporation
FDT3612 Rev. C2 (W)
FDT3612
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= 3.7 A 90 mJ
DSS
IAR Drain-Source Avalanche Current 3.7 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
100 V
106
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 10 V 10 A
D(on)
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 3.7 A
= 6 V, ID = 3.5 A
V
GS
V
= 10 V, ID = 3.7A, TJ = 125°C
GS
gFS Forward Transconductance VDS = 10 V, ID = 3.7 A 11 S
2 2.5 4 V
–6
88
94
170
120
130
245
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 632 pF
iss
C
Output Capacitance 40 pF
oss
C
Reverse Transfer Capacitance
rss
= 50 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
20 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 8.5 17 ns
d(on)
tr Turn–On Rise Time 2 4 ns
t
Turn–Off Delay Time 23 37 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 14 20 nC
Qgs Gate–Source Charge 2.4 nC
Qgd Gate–Drain Charge
V
= 50 V, ID = 1 A,
DD
= 10 V, R
V
GS
V
= 50 V, ID = 3.7 A,
DS
V
= 10 V
GS
GEN
= 6 Ω
4.5 9 ns
3.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Di ode Forward Current 2.5 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
a) 42°C/W when
mounted on a 1in
pad of 2 oz copper
is determined by the user's board design.
θCA
2
VGS = 0 V, IS = 2.5 A (Note 2)
b) 95°C/W when
mounted on a .0066
2
pad of 2 oz
in
copper
0.75 1.2 V
c) 110°C/W when mounted on a
minimum pad.
FDT3612 Rev. C2 (W)
Typical Characteristics
FDT3612
20
VGS = 10V
16
12
8
, DRAIN CURRENT (A)
D
I
4
0
02468
5.0V
V
, DRAIN-SOURCE VOLTAGE (V)
DS
4.5V
4.0V
3.5V
1.8
1.6
VGS = 4.0V
4.5V
5.0V
6.0V
10V
1
0 4 8 12 16 20
, DRAIN CURRENT (A)
I
D
, NORMALIZED
DS(ON)
R
1.4
1.2
DRAIN-SOURCE ON-RESISTANCE
0.8
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.2
ID = 3.7A
2
V
= 10V
GS
1.8
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
0.6
DRAIN-SOURCE ON-RESISTANCE
0.4
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (oC)
J
0.4
0.3
0.2
, ON-RESISTANCE (OHM)
0.1
DS(ON)
R
0
345678910
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = 125oC
TA = 25oC
ID = 1.9 A
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 10V
16
12
8
, DRAIN CURRENT (A)
D
I
4
0
22.533.544.55
TA = 125oC
-55oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
25oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
with Source Current and Temperature.
FDT3612 Rev. C2 (W)
Typical Characteristics
FDT3612
10
ID = 3.7A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 2 4 6 8 10 12 14 16
Q
, GATE CHARGE (nC)
g
VDS = 40V
80V
60V
800
700
600
500
400
300
CAPACITANCE (pF)
200
100
0
C
RSS
0 20406080100
V
, DRAIN TO SOURCE VOLT AGE ( V )
DS
C
ISS
C
OSS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
50
10
1
THIS A REA IS
0.1
LIMITED BY r
SINGLE PULSE
, DRAIN CURRENT (A)
D
I
0.01
0.001
= MAX RATED
T
J
R
θJA
= 25
T
A
0.1 1 10 100 500
DS(on)
o
= 110
C/W
o
C
VDS, DRAIN to SOURCE VOLTAGE (V)
100 μs
1 ms
10 ms
100 ms
1 s
10 s
DC
40
SINGLE PULSE
R
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100
, TIME (sec)
t
1
θ
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
= 110°C/W
JA
T
= 25°C
A
f = 1MHz
= 0 V
V
GS
1
D = 0.5
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.05
0.02
0.01
SINGLE PULSE
, TIME (sec)
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
R
(t) = r(t) + R
θJA
R
= 110°C/W
JA
θ
)
P(pk
t
1
t
T
- TA = P * R
J
Duty Cycle, D = t
θJA
2
(t)
θJA
/ t
1
2
FDT3612 Rev. C2 (W)
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Rev. I61
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