Fairchild FDS9958 service manual

tm

FDS9958

Dual P-Channel PowerTrench® MOSFET

-60V, -2.9A, 105mΩ

Features

 Max r
 Max r
 RoHS Compliant

=105mΩ at VGS = -10V, ID = -2.9A

DS(on)

=135mΩ at VGS = -4.5V, ID = -2.5A

DS(on)

D2

D2

D1

D1

General Description

These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.

These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.

Applications

 Load Switch
 Power Management

D2

5

D2

6

Q2Q1Q2

FDS9958 Dual P-Channel PowerTrench

July 2007

®

®

MOSFET

G2

4

S2

3

G2

S2

G1

SO-8

S1

= 25°C unless otherwise noted

A

Pin 1

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage -60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) -2.9

-Pulsed -12
Single Pulse Avalanche Energy (Note 3) 54 mJ
Power Dissipation for Dual Operation 2

Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range -55 to +150 °C

D1

D1

7

Q1

8

G1

2

S1

1

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 40
Thermal Resistance, Junction to Ambient (Note 1a) 78

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS9958 FDS9958 SO-8 330mm 12mm 2500units

A

WPower Dissipation (Note 1a) 1.6

°C/W

©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C

1

www.fairchildsemi.com

FDS9958 Dual P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -60 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V, V

ID = -250µA, referenced to 25°C -52 mV/°C
VDS = -48V, -1

V

= 0V TJ = 125°C -100

GS

= 0V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.0 -1.6 -3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = -5V, ID = -2.9A 7.7 S

ID = -250µA, referenced to 25°C 4 mV/°C
VGS = -10V, ID = -2.9A 82 105

VGS = -10V, ID = -2.9A, TJ= 125°C 131 190

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 90 120 pF
Reverse Transfer Capacitance 40 65 pF

VDS = -30V, VGS = 0V,
f = 1MHz

765 1020 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 3 10 ns
Turn-Off Delay Time 27 43 ns

VDD = -30V, ID = -2.9A,
VGS = -10V, R

GEN

= 6Ω

6 12 ns

Fall Time 6 12 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 2 nC

= 0V to -10V

GS

= 0V to -4.5V 8 12 nC

GS

VDD = -30V,
ID = -2.9A

16 23 nC

Gate to Drain “Miller” Charge 3 nC

µA

mΩVGS = -4.5V, ID = -2.5A 103 135

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. UIL condition: Starting T

©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C

Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 21 35 nC

= 25°C, L = 3mH, I

J

a) 78°C/W when
mounted on a 1 in
pad of 2 oz copper

= 6A, VDD = 60V, VGS = 10V.

AS

= 0V, IS = -1.3A (Note 2) -0.8 -1.2 V

GS

IF = -2.9A, di/dt = 100A/µs

2

2

θJC

26 42 ns

is guaranteed by design while R

b) 135°C/W when
mounted on a
minimun pad

is determined by

θCA

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