tm
FDS9958
Dual P-Channel PowerTrench® MOSFET
-60V, -2.9A, 105mΩ
Features
Max r
Max r
RoHS Compliant
=105mΩ at VGS = -10V, ID = -2.9A
DS(on)
=135mΩ at VGS = -4.5V, ID = -2.5A
DS(on)
D2
D2
D1
D1
General Description
These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Load Switch
Power Management
D2
5
D2
6
Q2Q1Q2
FDS9958 Dual P-Channel PowerTrench
July 2007
®
®
MOSFET
G2
4
S2
3
G2
S2
G1
SO-8
S1
= 25°C unless otherwise noted
A
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage -60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) -2.9
-Pulsed -12
Single Pulse Avalanche Energy (Note 3) 54 mJ
Power Dissipation for Dual Operation 2
Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range -55 to +150 °C
D1
D1
7
Q1
8
G1
2
S1
1
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 40
Thermal Resistance, Junction to Ambient (Note 1a) 78
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS9958 FDS9958 SO-8 330mm 12mm 2500units
A
WPower Dissipation (Note 1a) 1.6
°C/W
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
1
www.fairchildsemi.com
FDS9958 Dual P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -60 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V, V
ID = -250µA, referenced to 25°C -52 mV/°C
VDS = -48V, -1
V
= 0V TJ = 125°C -100
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.0 -1.6 -3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = -5V, ID = -2.9A 7.7 S
ID = -250µA, referenced to 25°C 4 mV/°C
VGS = -10V, ID = -2.9A 82 105
VGS = -10V, ID = -2.9A, TJ= 125°C 131 190
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 90 120 pF
Reverse Transfer Capacitance 40 65 pF
VDS = -30V, VGS = 0V,
f = 1MHz
765 1020 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 3 10 ns
Turn-Off Delay Time 27 43 ns
VDD = -30V, ID = -2.9A,
VGS = -10V, R
GEN
= 6Ω
6 12 ns
Fall Time 6 12 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 2 nC
= 0V to -10V
GS
= 0V to -4.5V 8 12 nC
GS
VDD = -30V,
ID = -2.9A
16 23 nC
Gate to Drain “Miller” Charge 3 nC
µA
mΩVGS = -4.5V, ID = -2.5A 103 135
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 21 35 nC
= 25°C, L = 3mH, I
J
a) 78°C/W when
mounted on a 1 in
pad of 2 oz copper
= 6A, VDD = 60V, VGS = 10V.
AS
= 0V, IS = -1.3A (Note 2) -0.8 -1.2 V
GS
IF = -2.9A, di/dt = 100A/µs
2
2
θJC
26 42 ns
is guaranteed by design while R
b) 135°C/W when
mounted on a
minimun pad
is determined by
θCA
www.fairchildsemi.com
FDS9958 Dual P-Channel PowerTrench
Typical Characteristics T
12
VGS = -10V
10
8
6
4
, DRAIN CURRENT (A)
D
2
-I
0
01234
-V
DS
Figure 1.
On-Region Characteristics
1.8
ID = -2.9A
V
GS
= -10V
1.6
1.4
1.2
NORMALIZED
1.0
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (
J
Figu r e 3. Nor m a lized O n - Resis t a nce
vs Junction Temperature
VGS = - 4V
VGS = -5V
VGS = - 4.5V
PULSE DURA TION = 300µs
DUTY CYCLE = 2.0%MAX
, DRAIN TO SOURCE VOLTAGE (V)
= 25°C unless otherwise noted
J
VGS = -3.5V
VGS = -3V
o
C)
2.5
VGS = -3V
2.0
1.5
NORMALIZED
1.0
PULSE DURATION = 300µs
DRAIN TO SOURCE ON-RESISTANCE
0.5
Figure 2.
DUTY CYCLE = 2.0%MAX
024681012
-I
D
Norma l i z e d O n - Resistanc e
VGS = -3.5V
VGS = -4.5V
, DRAIN CURRENT(A)
VGS = -4V
V
= -5V
GS
V
= -10V
GS
vs Drain Current and Gate Voltage
240
210
ID = -2.9A
(mΩ)
180
150
, DRAIN TO
120
DS(on)
r
90
SOURCE ON-RESISTANCE
60
246810
-V
, GATE TO SO U RCE VOLTAGE (V)
GS
Figure 4.
On-Resistance vs Gate to
PULSE DURA TION = 300µs
DUTY CYCLE = 2.0%MAX
TJ = 125oC
o
T
= 25
C
J
Source Voltage
®
MOSFET
12
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
10
V
= -5V
DD
8
6
4
, DRAIN CURRENT (A)
D
2
-I
0
012345
TJ = 150oC
TJ = 25oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
TJ = -55oC
20
10
V
= 0V
GS
1
0.1
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDS9958 Dual P-Channel PowerTrench
Typical Characteristics T
10
ID = -2.9A
8
6
4
VDD = -30V
2
, GATE TO SOURCE VOLTAGE(V)
GS
-V
0
0 5 10 15 20
Figure 7.
4
3
2
, AVALANCHE CURRENT(A)
AS
-I
1
0.01 0.1 1 10 100
Figure 9.
Switching Capability
V
= -20V
DD
VDD = -40V
Qg, GATE CHARGE(nC)
Gate Charge Characteristics
TJ = 125oC
tAV, TIME IN AVALANCHE(ms )
Uncl a m p e d I n duct i v e
= 25°C unless otherwise noted
J
TJ = 25oC
2000
1000
C
iss
100
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
10
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8.
Capacitance vs Drain
C
oss
C
rss
to Source Voltage
3.0
2.5
2.0
V
GS
= -4.5V
V
1.5
1.0
, DRAIN CURRENT (A)
-I
R
D
θJA
= 78oC/W
0.5
0.0
25 50 75 100 125 150
T
, AMBIENT TEMPERATURE (
A
Figure 10.
Ma xim um Continuou s Dr ain
Current vs Ambient Temperature
60
®
MOSFET
= -10V
GS
o
C)
20
10
1
THIS A REA IS
LIMITED BY r
0.1
, DRAIN CURRENT (A)
D
-I
0.01
0.1 1 10 100
DS(on)
SINGLE PULSE
T
= MAX RATED
J
o
= 135
θJA
A
= 25
C/W
o
C
R
T
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
200
0.1ms
1ms
10ms
100ms
1s
10s
DC
200
100
10
1
), PEAK TRANSIENT POWER (W)
PK
P(
0.5
Figure 12.
VGS = -10V
10-310-210
t, PULSE WIDTH (s)
Sing le Pulse Maxim um
SINGLE PULSE
o
R
= 135
C/W
θJA
o
T
= 25
C
A
-1
0
10
10110210
3
Power Dissipation
4
www.fairchildsemi.com
FDS9958 Dual P-Channel PowerTrench
Typical Characteristics T
NORMALIZED THERMAL
θJA
Z
0.1
IMPEDANCE,
0.01
0.005
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-3
10
10
-2
= 25°C unless otherwise noted
J
SINGLE PULSE
= 135oC/W
R
θJA
10
-1
t, RECTANGULAR PULSE DURATION (s)
0
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
1
10
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
2
10
3
10
®
MOSFET
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
5
www.fairchildsemi.com
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Advance Information F orm ative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
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Rev. I30
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