Fairchild FDMS7660AS service manual
FDMS7660AS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 2.4 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 2.4 mΩ at VGS = 10 V, ID = 25 A
DS(on)
= 2.6 mΩ at VGS = 7 V, ID = 23 A
DS(on)
DS(on)
General Description
The FDMS7660AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDMS7660AS N-Channel PowerTrench
September 2009
®
SyncFET
TM
Top
D
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
dv/dt MOSFET dv/dt 1.7 V/ns
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 128 mJ
Power Dissipation TC = 25 °C 83
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
C
Bottom
D
D
D
= 25 °C unless otherwise noted
Pin 1
S
S
S
G
= 25 °C 152
C
= 25 °C (Note 1a) 26
A
= 25 °C (Note 1a) 2.5
A
D
5
D
6
D
7
D
8
G
4
S
3
S
2
S
1
Thermal Characteristics
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.5
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7660AS FDMS7660AS Power 56 13 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7660AS Rev.C
°C/W
1
www.fairchildsemi.com
FDMS7660AS N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
ID = 10 mA, referenced to 25 °C 14 mV/°C
= 0 V 500 µA
GS
= 0 V 100 nA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.9 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5 V, ID = 25 A 455 S
ID = 10 mA, referenced to 25 °C -5 mV/°C
VGS = 10 V, ID = 25 A 1.9 2.4
VGS = 7 V, ID = 23 A 2.0 2.6
VGS = 4.5 V, ID = 21 A 2.5 3.0
VGS = 10 V, ID = 25 A, TJ = 125 °C 2.4 3.1
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1550 2065 pF
Reverse Transfer Capacitance 125 190 pF
VDS = 15 V, VGS = 0 V,
f = 1 MHz
4600 6120 pF
Gate Resistance 0.8 1.7 Ω
mΩ
®
SyncFET
TM
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 8 15 ns
Turn-Off Delay Time 40 65 ns
VDD = 15 V, ID = 25 A,
VGS = 10 V, R
GEN
Fall Time 5 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 29 42 nC
Gate to Source Gate Charge 14.4 nC
Gate to Drain “Miller” Charge 5.9 nC
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.41 0.7
V
SD
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 55 88 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
GS
V
= 0 V, IS = 25 A (Note 2) 0.76 1.2
GS
IF = 25 A, di/dt = 300 A/µs
= 6 Ω
VDD = 15 V,
I
= 25 A
D
19 34 ns
64 90 nC
39 62 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 30 0 µs, Duty cycle < 2.0%.
of 128 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A.
3. E
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7660AS Rev.C
2
www.fairchildsemi.com
FDMS7660AS N-Channel PowerTrench
Typical Characteristics T
150
120
90
60
DRAIN CURRENT (A)
,
30
D
I
0
0.0 0.5 1.0 1.5 2.0
Figure 1.
1.6
ID = 25 A
V
GS
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0 .5% MAX
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
= 10 V
T
,
JUNCTION TEMPERATURE
J
vs Junction Temperature
= 25 °C unless otherwise noted
J
VGS = 3.5 V
VGS = 3 V
o
(
C
)
NORMALIZED
6
5
4
3
2
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 3.5 V
V
= 4 V
GS
1
DRAIN TO SOURCE ON-RESISTANCE
0
0306090120150
I
D
VGS = 4.5 V
,
DRAIN CURRENT (A)
V
= 10 V
GS
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
8
)
Ω
m
(
6
4
DRAIN TO
,
DS(on)
r
2
SOURCE ON-RESISTANCE
0
246810
Figure 4.
ID = 25 A
V
,
GATE TO SOURCE VOLTAGE (V)
GS
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
TJ = 25 oC
Source Voltage
®
SyncFET
TM
150
120
90
60
, DRAIN CURRENT (A)
30
D
I
0
1.5 2.0 2.5 3.0 3.5 4.0
Figure 5. Transfer Characteristics
FDMS7660AS Rev.C
PULSE DURATI ON = 80 µs
DUTY CYCLE = 0 .5% MAX
V
= 5 V
DS
TJ = 125 oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25 oC
TJ = -55 oC
200
100
V
= 0 V
GS
10
TJ = 125 oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
TJ = 25 oC
TJ = -55 oC
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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