FDMS7660AS
N-Channel PowerTrench® SyncFETTM
30 V, 42 A, 2.4 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 2.4 mΩ at VGS = 10 V, ID = 25 A
DS(on)
= 2.6 mΩ at VGS = 7 V, ID = 23 A
DS(on)
DS(on)
General Description
The FDMS7660AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDMS7660AS N-Channel PowerTrench
September 2009
®
SyncFET
TM
Top
D
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
dv/dt MOSFET dv/dt 1.7 V/ns
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 128 mJ
Power Dissipation TC = 25 °C 83
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
C
Bottom
D
D
D
= 25 °C unless otherwise noted
Pin 1
S
S
S
G
= 25 °C 152
C
= 25 °C (Note 1a) 26
A
= 25 °C (Note 1a) 2.5
A
D
5
D
6
D
7
D
8
G
4
S
3
S
2
S
1
Thermal Characteristics
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.5
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7660AS FDMS7660AS Power 56 13 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7660AS Rev.C
°C/W
1
www.fairchildsemi.com
FDMS7660AS N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
ID = 10 mA, referenced to 25 °C 14 mV/°C
= 0 V 500 µA
GS
= 0 V 100 nA
DS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.9 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5 V, ID = 25 A 455 S
ID = 10 mA, referenced to 25 °C -5 mV/°C
VGS = 10 V, ID = 25 A 1.9 2.4
VGS = 7 V, ID = 23 A 2.0 2.6
VGS = 4.5 V, ID = 21 A 2.5 3.0
VGS = 10 V, ID = 25 A, TJ = 125 °C 2.4 3.1
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1550 2065 pF
Reverse Transfer Capacitance 125 190 pF
VDS = 15 V, VGS = 0 V,
f = 1 MHz
4600 6120 pF
Gate Resistance 0.8 1.7 Ω
mΩ
®
SyncFET
TM
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 8 15 ns
Turn-Off Delay Time 40 65 ns
VDD = 15 V, ID = 25 A,
VGS = 10 V, R
GEN
Fall Time 5 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 29 42 nC
Gate to Source Gate Charge 14.4 nC
Gate to Drain “Miller” Charge 5.9 nC
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.41 0.7
V
SD
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 55 88 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
GS
V
= 0 V, IS = 25 A (Note 2) 0.76 1.2
GS
IF = 25 A, di/dt = 300 A/µs
= 6 Ω
VDD = 15 V,
I
= 25 A
D
19 34 ns
64 90 nC
39 62 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 30 0 µs, Duty cycle < 2.0%.
of 128 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A.
3. E
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7660AS Rev.C
2
www.fairchildsemi.com
FDMS7660AS N-Channel PowerTrench
Typical Characteristics T
150
120
90
60
DRAIN CURRENT (A)
,
30
D
I
0
0.0 0.5 1.0 1.5 2.0
Figure 1.
1.6
ID = 25 A
V
GS
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0 .5% MAX
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
= 10 V
T
,
JUNCTION TEMPERATURE
J
vs Junction Temperature
= 25 °C unless otherwise noted
J
VGS = 3.5 V
VGS = 3 V
o
(
C
)
NORMALIZED
6
5
4
3
2
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 3.5 V
V
= 4 V
GS
1
DRAIN TO SOURCE ON-RESISTANCE
0
0306090120150
I
D
VGS = 4.5 V
,
DRAIN CURRENT (A)
V
= 10 V
GS
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
8
)
Ω
m
(
6
4
DRAIN TO
,
DS(on)
r
2
SOURCE ON-RESISTANCE
0
246810
Figure 4.
ID = 25 A
V
,
GATE TO SOURCE VOLTAGE (V)
GS
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
TJ = 25 oC
Source Voltage
®
SyncFET
TM
150
120
90
60
, DRAIN CURRENT (A)
30
D
I
0
1.5 2.0 2.5 3.0 3.5 4.0
Figure 5. Transfer Characteristics
FDMS7660AS Rev.C
PULSE DURATI ON = 80 µs
DUTY CYCLE = 0 .5% MAX
V
= 5 V
DS
TJ = 125 oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25 oC
TJ = -55 oC
200
100
V
= 0 V
GS
10
TJ = 125 oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
TJ = 25 oC
TJ = -55 oC
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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FDMS7660AS N-Channel PowerTrench
Typical Characteristics T
10
ID = 25 A
8
VDD = 15 V
6
4
2
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
0 10203040506070
Figure 7.
40
10
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100
VDD = 10 V
Qg, GATE CHARGE (nC)
Gate Charge Characteristics Fi gure 8.
TJ = 25 oC
TJ = 125 oC
Figure 9.
tAV, TIME IN AVALANCHE (ms)
U n c l a m p e d I n d u c t i v e
Switching Capability
= 25 °C unless otherwise noted
J
V
= 20 V
DD
TJ = 100 oC
300
8000
1000
CAPACITANCE (pF)
f = 1 MHz
100
V
= 0 V
GS
60
0.1 1 10 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
C a p a c i t a n c e v s D r a i n
to Source Voltage
160
120
V
= 10 V
GS
80
V
= 4.5 V
GS
DRAIN CURRENT (A)
,
40
D
I
Limited by Package
0
25 50 75 100 125 150
T
,
CASE TEMPERATURE
C
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
R
θ
JC
= 1.5 oC/W
o
(
C
Current vs Case Temperature
C
iss
C
oss
C
rss
®
SyncFET
TM
)
200
100
10
1
, DRAIN CURRENT (A)
D
0.1
I
0.01
0.01 0.1 1 10 100
FDMS7660AS Rev.C
1 ms
10 ms
THIS AREA IS
LIMITED BY r
SINGLE PULSE
= MAX RATED
T
J
R
θ
JA
= 25 oC
T
A
DS(on)
= 125 oC/W
100 ms
1 s
10 s
DC
200
VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
1000
VGS = 10 V
100
10
), PEAK TRANSIENT POWER (W)
PK
P(
0.6
SINGLE PULSE
R
T
1
-3
10
Figure 12.
θJA
A
o
= 125
C/W
o
= 25
C
-2
10
-1
10
t, PULSE WIDTH ( sec)
110
S i n g l e P u l s e M a x i m u m
100 1000
Power Dissipation
4
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FDMS7660AS N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θJA
-3
10
-2
10
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
θJA
Z
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
= 25 °C unless otherwise noted
J
= 125 oC/W
-1
10
t, RECTANGULAR PULSE DURATION (sec )
P
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
110
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
100 1000
®
SyncFET
TM
FDMS7660AS Rev.C
5
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Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MoSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMS7660AS.
FDMS7660AS N-Channel PowerTrench
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
30
25
20
15
10
CURRENT (A)
5
0
-5
0 50 100 150 200 250
di/dt = 300 A/µs
TIME (ns)
Figure 14. FDMS7660AS SyncFET body
diode reverse recovery characteristic
-2
10
-3
10
-4
10
-5
10
, REVERSE LEAKAGE CURRENT (A)
-6
10
DSS
I
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
Figure 15. SyncFET body diode reverses
leakage versus drain-source voltage
®
SyncFET
TM
FDMS7660AS Rev.C
6
www.fairchildsemi.com
Dimensional Outline and Pad Layout
FDMS7660AS N-Channel PowerTrench
®
SyncFET
TM
FDMS7660AS Rev.C
7
www.fairchildsemi.com
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™*
™*
Fairchild
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FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
®
®
®
®
*
®
FPS™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
PDP SPM™
Power-SPM™
PowerTrench
®
®
SM
®
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS7660AS N-Channel PowerTrench
®
SyncFET
TM
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FDMS7660AS Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
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