Fairchild FDMF6707C service manual

March 2012

FDMF6707C - Extra-Small, High-Performance, HighFrequency DrMOS Module

FDMF6707C - Extra-Small High-Performance, High-Frequency DrMOS Module

Benefits

 Ultra-Compact 6x6mm PQFN, 72% Space-Saving

Compared to Conventional Discrete Solutions

 Fully Optimized System Efficiency  Clean Switching Waveforms with Minimal Ringing  High-Current Handling

Features

 Over 93% Peak-Efficiency  High-Current Handling of 50A  High-Performance PQFN Copper-Clip Package  3-State 5.0V PWM Input Driver  Skip-Mode SMOD# (Low-Side Gate Turn Off) Input  Thermal Warning Flag for Over-Temperature

Condition

 Driver Output Disable Function (DISB# Pin)  Internal Pull-Up and Pull-Down for SMOD# and

DISB# Inputs, Respectively

 Fairchild PowerTrench

Clean Voltage Waveforms and Reduced Ringing

®

Technology MOSFETs for

 Fairchild SyncFET™ (Integrated Schottky Diode)

Technology in the Low-Side MOSFET

 Integrated Bootstrap Schottky Diode  Adaptive Gate Drive Timing for Shoot-Through

Protection

 Under-Voltage Lockout (UVLO)  Optimized for Switching Frequencies up to 1MHz  Low-Profile SMD Package  Fairchild Green Packaging and RoHS Compliance  Based on the Intel

®

4.0 DrMOS Standard

Description

The XS™ DrMOS family is Fairchild’s next-generation, fully optimized, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The FDMF6707C integrates a driver IC, two power MOSFETs, and a bootstrap Schottky diode into a thermally enhanced, ultra-compact 6x6mm PQFN package.

With an integrated approach, the complete switching power stage is optimized for driver and MOSFET dynamic performance, system inductance, and power MOSFET R performance PowerTrench which dramatically reduces switch ringing, eliminating the snubber circuit in most buck converter applications.

A new driver IC with reduced dead times and propagation delays further enhances performance. A thermal warning function indicates potential overtemperature situations. FDMF6707C also incorporates features such as Skip Mode (SMOD) for improved lightload efficiency, along with a three-state 5V PWM input for compatibility with a wide range of PWM controllers.

. XS™ DrMOS uses Fairchild's high-

DS(ON)

®

MOSFET technology,

Applications

 High-Performance Gaming Motherboards  Compact Blade Servers, V-Core and Non-V-Core

DC-DC Converters

 Desktop Computers, V-Core and Non-V-Core

DC-DC Converters

 Workstations  High-Current DC-DC Point-of-Load (POL)

Converters

 Networking and Telecom Microprocessor Voltage

Regulators

 Small Form-Factor Voltage Regulator Modules

Ordering Information

Part Number Current Rating Package Top Mark

FDMF6707C 50A 40-Lead, Clipbond PQFN DrMOS, 6.0mm x 6.0mm Package FDMF6707C

Typical Application Circuit

FDMF6707C - Extra-Small High-Performance, High-Frequency DrMOS Module

V5V

C

VDRV

DISB#

2.2V

OFF

ON

Open Drain Output

DrMOS Block Diagram

VCIN VIN

VDRV

R

DISB#

PWM

SMOD#

THWN#

FDMF6707C

CGND

PGND

BOOT

PHASE

VSWH

BOOT

Figure 1. Typical Application Circuit

VDRV

VIN 3V ~ 15V

C

VIN

C

BOOT

V

L

OUT

C

OUT

BOOT

VIN

VCIN

DISB#

PWM

THWN#

R

UP_PWM

R

DN_PWM

CGND

10µA

UVLO

V

CIN

Temp.

Sense

Input

3- State

Logic

D

Boot

GH

Logic

Level Shift

Dead-Time

Control

GL

Logic

V

CIN

10µA

SMOD#

Figure 2. DrMOS Block Diagram

Q1 HS Power MOSFET

GH

30kΩ

PHASE

VSWH

V

DRV

GL

30kΩ

Q2 LS Power MOSFET

PGND

Pin Configuration

FDMF6707C - Extra-Small High-Performance, High-Frequency DrMOS Module

Figure 3. Bottom View Figure 4. Top View

Pin Definitions

Pin # Name Description

When SMOD#=HIGH, the low-side driver is the inverse of PWM input. When SMOD#=LOW,

1 SMOD#

2 VCIN IC bias supply. Minimum 1µF ceramic capacitor is recommended from this pin to CGND.

3 VDRV

4 BOOT

5, 37, 41 CGND IC ground. Ground return for driver IC.

6 GH For manufacturing test only. This pin must float; must not be connected to any pin.

7 PHASE Switch node pin for bootstrap capacitor routing. Electrically shorted to VSWH pin.

8 NC

9 - 14, 42 VIN Power input. Output stage supply voltage.

15, 29 -

35, 43

16 – 28 PGND Power ground. Output stage ground. Source pin of the low-side MOSFET.

36 GL For manufacturing test only. This pin must float; must not be connected to any pin.

38 THWN#

39 DISB#

40 PWM PWM signal input. This pin accepts a three-state 5V PWM signal from the controller.

VSWH

the low-side driver is disabled. This pin has a 10µA internal pull-up current source. Do not add a noise filter capacitor.

Power for gate driver. Minimum 1µF ceramic capacitor is recommended, connected as close as possible from this pin to CGND.

Bootstrap supply input. Provides voltage supply to the high-side MOSFET driver. Connect a bootstrap capacitor from this pin to PHASE.

No connect. The pin is not electrically connected internally, but can be connected to VIN for convenience.

Switch node input. Provides return for high-side bootstrapped driver and acts as a sense point for the adaptive shoot-through protection.

Thermal warning flag, open collector output. When temperature exceeds the trip limit, the output is pulled LOW. THWN# does not disable the module.

Output disable. When LOW, this pin disables the power MOSFET switching (GH and GL are held LOW). This pin has a 10µA internal pull-down current source. Do not add a noise filter capacitor.

FDMF6707C - Extra-Small High-Performance, High-Frequency DrMOS Module

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Min. Max. Unit

V

Supply Voltage Referenced to CGND -0.3 6.0 V

CIN

V

Drive Voltage Referenced to CGND -0.3 6.0 V

DRV

V

Output Disable Referenced to CGND -0.3 6.0 V

DISB#

V

PWM Signal Input Referenced to CGND -0.3 6.0 V

PWM

V

Skip Mode Input Referenced to CGND -0.3 6.0 V

SMOD#

VGL Low Gate Manufacturing Test Pin Referenced to CGND -0.3 6.0 V

V

Thermal Warning Flag Referenced to CGND -0.3 6.0 V

THWN#

VIN Power Input Referenced to PGND, CGND -0.3 25.0 V

V

Bootstrap Supply

BOOT

VGH High Gate Manufacturing Test Pin

V

PHASE Referenced to CGND -0.3 25.0 V

PHS

V

Switch Node Input

SWH

V

Bootstrap Supply Referenced to VDRV 22 V

BOOT

I

THWN# Sink Current -0.1 7.0 mA

THWN#

I

O(AV)

θ

JPCB

Output Current

Junction-to-PCB Thermal Resistance 3.5 °C/W

(1)

TA Ambient Temperature Range -40 +125 °C

TJ Maximum Junction Temperature +150 °C

T

Storage Temperature Range -55 +150 °C

STG

ESD Electrostatic Discharge Protection

Note:

1. I

is rated using Fairchild’s DrMOS evaluation board, TA = 25°C, natural convection cooling. This rating is limited

O(AV)

by the peak DrMOS temperature, T

= 150°C, and varies depending on operating conditions and PCB layout. This

J

rating can be changed with different application settings.

Referenced to VSWH, PHASE -0.3 6.0 V

Referenced to CGND -0.3 25.0 V

Referenced to VSWH, PHASE -0.3 6.0 V

Referenced to CGND -0.3 25.0 V

Referenced to PGND, CGND (DC Only) -0.3 25.0 V

Referenced to PGND, <20ns -8.0 25.0 V

fSW=300kHz, VIN=12V, V

fSW=1MHz, VIN=12V, VO=1V 45

Human Body Model, JESD22-A114 2000

Charged Device Model, JESD22-C101 1000

=1V 50

O

A

V

Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings.

Symbol Parameter Min. Typ. Max. Unit

V

Control Circuit Supply Voltage 4.5 5.0 5.5 V

CIN

V

Gate Drive Circuit Supply Voltage 4.5 5.0 5.5 V

DRV

VIN Output Stage Supply Voltage 3.0 12.0 15.0

Note:

2. Operating at high VIN can create excessive AC overshoots on the VSWH-to-GND and BOOT-to-GND nodes during MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application

Information” and “PCB Layout Guidelines” sections of this datasheet for additional information.

(2)

V

Electrical Characteristics

Typical values are VIN = 12V, V

Symbol Parameter Condition Min. Typ. Max. Unit

Basic Operation

IQ Quiescent Current IQ=I

UVLO UVLO Threshold V

UVLO

PWM Input (V

R

V

t

D_HOLD-OFF

V

HiZ_PWM

PWM Input (V

R

V

t

D_HOLD-OFF

V

HiZ_PWM

DISB# Input

V

t

PD_DISBL

t

PD_DISBH

SMOD# Input

V

IH_SMOD

V

t

PD_SLGLL

t

PD_SHGLH

UVLO Hysteresis

_Hyst

= V

CIN

Pull-Up Impedance

UP_PWM

Pull-Down Impedance 10 kΩ

DN_PWM

PWM High Level Voltage 3.04 3.55 4.05 V

IH_PWM

3-State Upper Threshold 2.95 3.45 3.94 V

TRI_HI

3-State Lower Threshold 0.98 1.25 1.52 V

TRI_LO

PWM Low Level Voltage 0.84 1.15 1.42 V

IL_PWM

= 5V ±10%)

DRV

3-State Shut-off Time 160 200 ns

3-State Open Voltage 2.2 2.5 2.8 V

= V

CIN

Pull-Up Impedance 10 kΩ

UP_PWM

Pull-Down Impedance 10 kΩ

DN_PWM

PWM High Level Voltage

IH_PWM

3-State Upper Threshold

TRI_HI

3-State Lower Threshold

TRI_LO

PWM Low Level Voltage

IL_PWM

= 5V ±5%)

DRV

3-State Shut-Off Time 160 200 ns

3-State Open Voltage 2.3 2.5 2.7 V

High-Level Input Voltage 2 V

IH_DISB

Low-Level Input Voltage 0.8 V

IL_DISB

I

Pull-Down Current 10 µA

PLD

Propagation Delay

High-Level Input Voltage 2 V

Low-Level Input Voltage 0.8 V

IL_SMOD

I

Pull-Up Current 10 µA

PLU

Propagation Delay

= 5V, V

CIN

= 5V, and T

DRV

VCIN+IVDRV

Rising 2.9 3.1 3.3 V

CIN

= +25°C unless otherwise noted.

A

, PWM=LOW or HIGH or Float 2 mA

0.4 V

10 kΩ

3.22 3.55 3.87

3.13 3.45 3.77

1.04 1.25 1.46

0.90 1.15 1.36

PWM=GND, Delay Between DISB# from HIGH to LOW to GL from HIGH to LOW

PWM=GND, Delay Between DISB# from LOW to HIGH to GL from LOW to HIGH

PWM=GND, Delay Between SMOD# from HIGH to LOW to GL from HIGH to LOW

PWM=GND, Delay Between SMOD# from LOW to HIGH to GL from LOW to HIGH

25 ns

10 ns

FDMF6707C - Extra-Small High-Performance, High-Frequency DrMOS Module

V

Continued on the following page…

FDMF6707C - Extra-Small High-Performance, High-Frequency DrMOS Module

Electrical Characteristics (Continued)

Typical values are VIN = 12V, V

Symbol Parameter Condition Min. Typ. Max. Unit

Thermal Warning Flag

T

Activation Temperature 150 °C

ACT

T

Reset Temperature 135 °C

RST

R

Pull-Down Resistance I

THWN

250ns Timeout Circuit

t

D_TIMEOUT

High-Side Driver

R

SOURCE_GH

R

t

D_DEADON

t

PD_PLGHL

t

PD_PHGHH

t

PD_TSGHH

Low-Side Driver

R

SOURCE_GL

R

t

D_DEADOFF

t

PD_PHGLL

t

PD_TSGLH

Boot Diode

Timeout Delay

Output Impedance, Sourcing Source Current=100mA 1 Ω

Output Impedance, Sinking Sink Current=100mA 0.8 Ω

SINK_GH

t

Rise Time GH=10% to 90%, C

R_GH

t

Fall Time GH=90% to 10%, C

F_GH

LS to HS Deadband Time

PWM LOW Propagation Delay

PWM HIGH Propagation Delay (SMOD# Held LOW)

Exiting 3-State Propagation Delay

Output Impedance, Sourcing Source Current=100mA 1 Ω

Output Impedance, Sinking Sink Current=100mA 0.5 Ω

SINK_GL

t

Rise Time GL=10% to 90%, C

R_GL

t

Fall Time GL=90% to 10%, C

F_GL

HS to LS Deadband Time

PWM-HIGH Propagation Delay

Exiting 3-State Propagation Delay

VF Forward-Voltage Drop IF=10mA 0.35 V

VR Breakdown Voltage IR=1mA 22 V

= 5V, V

CIN

= 5V, and TA = +25°C unless otherwise noted.

DRV

=5mA 30 Ω

PLD

SW=0V, Delay Between GH from HIGH to LOW and GL from LOW to HIGH

=1.1nF 6 ns

LOAD

=1.1nF 5 ns

LOAD

GL going LOW to GH going HIGH, 1V GL to 10 % GH

PWM going LOW to GH going LOW, V

IL_PWM

to 90% GH

PWM going HIGH to GH going HIGH, V

to 10% GH (SMOD#=LOW)

IH_PWM

PWM (from 3-State) going HIGH to GH going HIGH, V

IH_PWM

to 10% GH

=5.9nF 20 ns

LOAD

=5.9nF 13 ns

LOAD

SW going LOW to GL going HIGH,

2.2V SW to 10% GL

PWM going HIGH to GL going LOW, V

IH_PWM

to 90% GL

PWM (from 3-State) going LOW to GL going HIGH, V

IL_PWM

to 10% GL

250 ns

10 ns

16 30 ns

30 ns

12 ns

9 25 ns

20 ns