Fairchild FCP20N60, FCPF20N60 service manual
July 2005
SuperFET
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
TM
FCP20N60 / FCPF20N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
•Typ. R
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
DS(on)
G
= 0.15Ω
D
S
= 75nC)
g
TO-220
.eff = 165pF)
oss
GSD
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
D
{
{
z
z
z
z
z
z
{
{
S
TO-220F
{
{
G
Absolute Maximum Ratings
Symbol Parameter FCP20N60 FCPF20N60 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
*Drain current limited by maximum junction temperature
Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
20
12.5
60 60*
690 mJ
20.8 mJ
4.5 V/ns
208
1.67
300 °C
20*
12.5*
20 A
39
0.3
Thermal Characteristics
Symbol Parameter FCP20N60 FCPF20N60 Unit
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 0.6 3.2 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
A
A
A
W
W/°C
©2005 Fairchild Semiconductor Corporation
FCP20N60 / FCPF20N60 Rev. A1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP20N60 FCP20N60 TO-220 - - 50
FCPF20N60 FCPF20N60 TO-220F - - 50
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
Electrical Characteristics
TC = 25°C unless otherwise not ed
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
BV
DS
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
= 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
2. I
AS
3. I
≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BV
SD
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V
= 0V, ID = 250µA, TJ = 150°C--650--V
V
GS
Breakdown Voltage Temperature
DSS
Coefficient
J
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
= 250µA, Referenced to 25°C--0.6--V/°C
I
D
= 0V, ID = 20A -- 700 -- V
V
GS
= 480V, TC = 125°C
V
DS
--
--
--
--
1
10
µA
µA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 10A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 1280 1665 pF
V
= 10V, ID = 10A -- 0.15 0.19 Ω
GS
(Note 4)
-- 17 -- S
-- 2370 3080 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 95 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF
Turn-On Delay Time VDD = 300V, ID = 20A
= 25Ω
R
Turn-On Rise Time -- 140 290 ns
G
-- 62 135 ns
Turn-Off Delay Time -- 230 470 ns
Turn-Off Fall Time -- 65 140 ns
Total Gate Charge VDS = 480V, ID = 20A
= 10V
V
Gate-Source Charge -- 13.5 18 nC
GS
Gate-Drain Charge -- 36 -- nC
(Note 4, 5)
-- 75 98 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 20A
/dt =100A/µs
dI
Reverse Recovery Charge -- 10.5 -- µC
, Starting TJ = 25°C
DSS
F
(Note 4)
-- 530 -- ns
FCP20N60 / FCPF20N60 Rev. A1
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
2
10
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1
Bottom : 5.5 V
10
0
, Drain Current [A]
10
D
I
-1
10
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
0.4
2
10
1
10
, Drain Current [A]
D
0
I
Notes :
µ
s Pulse Test
1. 250
= 25°C
2. T
C
0
10
1
10
10
246810
150°C
25°C
-55°C
VGS , Gate-Source Voltage [V]
Note
1. V
2. 250
DS
= 40V
and Temperatue
2
10
µ
s Pulse Test
FCP20N60 / FCPF20N60 600V N-Channel MOSFET
0.3
],
Ω
[
0.2
DS(ON)
R
0.1
Drain-Source On-Resistance
0.0
0 5 10 15 20 25 30 35 40 45 50 55 60 6 5 70
ID, Drain Current [A]
VGS = 10V
VGS = 20V
Note : TJ = 25°C
1
10
, Reverse Drain Current [A]
DR
I
0
10
150°C
25°C
Notes :
1. V
2. 250
= 0V
GS
µ
s Pulse Test
0.20.40.60.81.01.21.41.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Capacitanc e [pF]
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
oss
Notes :
1. V
= 0 V
10
2. f = 1 MHz
1
GS
C
iss
C
rss
0
-1
10
0
10
VDS, Drain-Source Voltage [ V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 102030 4050607080
QG, Total Gate Charge [nC]
VDS = 100V
VDS = 250V
VDS = 400V
Note : ID = 20A
FCP20N60 / FCPF20N60 Rev. A1
3
www.fairchildsemi.com
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