Fairchild FCP13N60N, FCPF13N60NT service manual
August 2009
SupreMOS
FCP13N60N / FCPF13N60NT
N-Channel MOSFET
600V, 13A, 0.258Ω
FCP13N60N / FCPF13N60NT N-Channel MOSFET
TM
Features
•R
• Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
MOSFET Maximum Ratings T
Symbol Parameter FCP13N60N FCPF13N60NT Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
DS(on)
TO-220
FCP Series
STG
G D S
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 39 39 A
Single Pulsed Avalanche Energy (Note 2) 235 mJ
Avalanche Current 4.3 A
Repetitive Avalanche Energy 1.16 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
D
G
S
= 25oC unless otherwise noted
C
-Continuous (T
-Continuous (T
(T
= 25oC) 116 33.8 W
C
- Derate above 25
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power, ATX
power, and industrial power applications.
D
G
TO-220F
FCPF Series
= 25oC) 13 13*
C
= 100oC) 8.2 8.2*
C
o
C 0.93 0.27 W/oC
S
300
Thermal Characteristics
Symbol Parameter FCP13N60N FCPF13N60NT Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 1.07 3.7
Thermal Resistance, Case to Heak Sink ( Typical) 0.5 0.5
Thermal Resistance, Junction to Ambient 62.5 62.5
A
o
C
o
C
o
C/WR
©2009 Fairchild Semiconductor Corporation
FCP13N60N / FCPF13N60NT Rev. A
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP13N60N FCP13N60N TO-220 - - 50
FCPF13N60NT FCPF13N60NT TO-220F - - 50
FCP13N60N / FCPF13N60NT N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 1mA, Referenced to 25oC - 0.73 - V/oC
D
V
= 480V, V
DS
= 480V, V
V
DS
= 0V - - 10
GS
= 0V, TC = 125oC - - 100
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 6.5A - 0.244 0.258 Ω
Forward Transconductance VDS = 40V, ID = 6.5A - 16.3 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
eff Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 145 - pF
C
oss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 50 65 pF
Reverse Transfer Capacitance - 3 5 pF
= 100V, VGS = 0V
V
DS
f = 1MHz
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 30 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 6.0 - nC
Gate to Drain “Miller” Charge - 9.5 - nC
V
= 380V,ID = 6.5A
DS
V
= 10V
GS
(Note 4)
ESR Equivalent Series Resistance (G-S) Drain Open - 2.8 - Ω
- 1325 1765 pF
- 30.4 39.5 nC
μA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 10.6 31.2 ns
Turn-Off Delay Time - 45 100 ns
Turn-Off Fall Time - 9.8 29.6 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
= 4.3A, RG = 25Ω, Starting TJ = 25°C
AS
3. ISD ≤ 13A, di/dt ≤ 200A/μs, VDD ≤ BV
4. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 13 A
Maximum Pulsed Drain to Source Diode Forward Current - - 39 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 3.5 - μC
, Starting TJ = 25°C
DSS
= 380V, ID = 6.5A
V
DD
R
= 4.7Ω
G
(Note 4)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs
F
= 6.5A - - 1.2 V
SD
= 6.5A
SD
-14.539ns
- 287 - ns
FCP13N60N / FCPF13N60NT Rev. A
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
40
V
= 15.0 V
GS
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
, Drain Current[A]
D
I
*Notes:
μs Pulse Test
1. 250
= 25oC
2. T
3
0.6 1 10 20
C
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.8
60
10
150oC
, Drain Current[A]
D
1
I
0.2
2468
-55oC
25oC
*Notes:
1. V
2. 250
= 20V
DS
μs Pulse Test
VGS, Gate-Source Voltage[V]
100
FCP13N60N / FCPF13N60NT N-Channel MOSFET
0.6
[Ω],
0.4
DS(ON)
R
0.2
VGS = 10V
VGS = 20V
Drain-Source On-Resistance
0.0
0 10203040
*Notes: TC = 25oC
ID, Drain Current [A]
150oC
10
, Reverse Drain Current [A]
S
I
1
0.4 0.8 1.2 1.6
VSD, Body Diode Forward Voltage [V]
25oC
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
50000
10000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
rss
= C
gd
gd
1000
100
Capacitances [pF]
10
1
0.1 1 10 100 600
*Notes:
= 0V
1. V
GS
2. f = 1MHz
VDS, Drain-Source Voltage [V]
C
iss
C
oss
C
rss
10
VDS = 120V
= 380V
V
8
V
DS
= 480V
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
0
010203040
*Notes: ID = 6.5A
Qg, Total Gate Charge [nC]
FCP13N60N / FCPF13N60NT Rev. A
3
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