Fairchild FCP11N60F, FCPF11N60F service manual

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

FCP11N60F

/FCPF11N60F

600V N-Channel MOSFET

Features

• 650V @TJ = 150°C

•Typ. R

• Fast Recovery Type ( t

• Ultra Low Gate Charge (typ. Q

• Low Effective Output Capacitance (typ. C

• 100% avalanche tested

• RoHS Compliant

DS(on)

G

= 0.32Ω

D

S

= 120ns)

rr

TO-220

= 40nC)

g

eff.=95pF)

oss

GSD

December 2008

SuperFET

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high

age MOSFET family that is utilizing an advanced charge

volt
balance mechanism for outstanding low on-resistance and
lower gate charge performance.

This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.

D

!

!

"

"

"

"

!

!

"

"
"

"

!

!

S

TO-220F

!

!

G

TM

Absolute Maximum Ratings

Symbol Parameter FCP11N60F FCPF11N60F Units

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

, T

T

J

STG

T

L

* Drain current limited by maximum junction termperature.

Drain Current - Continuous (TC = 25°C) 11 11 * A

- Continuous (T
Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 125 36 * W

- Derate above 25°C 1.0 0.29 * W/°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 7 7 * A

C

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

33 33 * A

340 mJ

11 A

12.5 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FCP11N60F FCPF11N60F Units

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case 1.0 3.5 °C/W
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

©2008 Fairchild Semiconductor Corporation

FCP11N60F/FCPF11N60F Rev. A1

1

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCP11N60F FCP11N60F TO-220 -- -- 50

FCPF11N60F FCPF11N60F TO-220F -- -- 50

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV
∆T

J

BV

DS

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

C

oss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature
= 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

2. I

AS

3. I

≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BV

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA, TJ = 25°C 600 -- -- V

V

= 0 V, ID = 250 µA, TJ = 150°C -- 650 -- V

GS

/

Breakdown Voltage Temperature

DSS

Coefficient
Drain-Source Avalanche Breakdown

ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C

VGS = 0 V, ID = 11 A -- 700 -- V

Voltage
Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA

V

= 480 V, TC = 125°C -- -- 100 µA

DS

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V - - -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V
Static Drain-Source

VGS = 10 V, ID = 5.5 A -- 0.32 0.38 Ω

On-Resistance
Forward Transconductance VDS = 40 V, ID = 5.5 A

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 671 870 pF

f = 1.0 MHz

(Note 4)

-- 9.7 -- S

-- 1148 1490 pF

Reverse Transfer Capacitance -- 63 82 pF
Output Capacitance VDS = 480 V, VGS = 0 V,

-- 35 -- pF

f = 1.0 MHz

eff. Effective Output Capacitance VDS = 0V to 480 V, VGS = 0 V -- 95 -- pF

Turn-On Delay Time VDD = 300 V, ID = 11 A,

R

= 25 Ω

Turn-On Rise Time -- 98 205 ns

G

-- 34 80 ns

Turn-Off Delay Time -- 119 250 ns
Turn-Off Fall Time -- 56 120 ns
Total Gate Charge VDS = 480 V, ID = 11 A,

V

= 10 V

Gate-Source Charge -- 7.2 -- nC

GS

(Note 4, 5)

(Note 4, 5)

-- 40 52 nC

Gate-Drain Charge -- 21 -- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 11 A,

dI

/ dt = 100 A/µs

Reverse Recovery Charge -- 0.8 -- µC

Starting TJ = 25°C

DSS,

F

(Note 4)

-- 120 -- ns

FCP11N60F/FCPF11N60F Rev. A1

2

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Typical Performance Characterist ics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

2

10

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

1

10

6.0 V
Botto m : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

1

10

150oC

0

10

, Drain Current [A]

D

* Notes :

µ

s Pulse Test

1. 250
= 25oC

2. T

C

0

10

1

10

I

-1

10

246810

25oC

-55oC

* Note

1. V

2. 250

= 40V

DS

µ

s Pulse Test

VGS , Ga te -Sourc e Volta g e [V]

and Temperatue

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

25 oC

* Notes :

= 0V

1. V

GS

µ

s Pulse Test

2. 250

1.0

0.8

],

0.6

Ω

[

DS(ON)

R

0.4

0.2

Drain-Source On-Resistance

0.0
0 5 10 15 20 25 30 35 40

VGS = 10V

ID, Drain Cu rre n t [A]

VGS = 20V

* Note : TJ = 25oC

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

150 oC

VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000

5000

4000

C

3000

2000

Capacitance [pF]

1000

0

-1

10

oss

C

iss

C

rss

0

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

* Notes :

1. V

2. f = 1 MHz

1

10

= 0 V

GS

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25 30 35 40 45

QG, Total Gate C h arg e [n C ]

VDS = 100V

VDS = 250V

VDS = 400V

* Note : ID = 11A

FCP11N60F/FCPF11N60F Rev. A1

3

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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

Typical Performance Characterist ics

(Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

1.1

1.0

, (Normalized)

BV

DSS

0.9

* Note s :

1. V

2. I

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

= 0 V

GS

= 250 µA

D

3.0

2.5

2.0

1.5

, (Normalized)

DS(ON)

1.0

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

* Notes :

1. V

2. I

Figure 9-1. Safe Operating Area Figure 9-2. Safe Operating Area
for FCP11N60F for FCPF11N60F

2

10

Operation in This Are a
is Limited by R

1

10

0

10

2

10

Operation in This Area

1

10

is Limited by R

DS(on)

DS(on)

100 us

1 ms

10 ms

DC

0

10

1 ms

10 ms

100 ms

DC

= 10 V

GS

= 5.5 A

D

100 us

, Drain Current [A ]

* Notes :

D

-1

I

1. T

10

= 25 oC

C

= 150 oC

2. T

J

3. Single Pulse

-2

10

0

10

1

10

2

10

3

10

, Drain Current [A]
I

VDS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current vs. Case Temperature

12.5

10.0

7.5

5.0

, Drain Current [A]

D

I

2.5

0.0
25 50 75 100 125 150

TC, Case Temperature [oC]

D

-1

10

-2

10

10

* Notes :

= 25 oC

1. T

C

= 150 oC

2. T

J

3. Single Pulse

0

1

10

2

10

VDS, Drain-Source Voltage [V]

3

10

FCP11N60F/FCPF11N60F Rev. A1

4

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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

Typical Performance Characterist ics

Figure 11-1. Transient Thermal Response Curve for FCP11N60F

0

10

D=0.5

0.2

0.1

-1

10

0.05

0.02

(t), Thermal Respons e
Z

Figure 11-2. Transient Thermal Response Curve for FCPF11N60F

(t), Thermal Response
Z

0.01

JC

θ

-2

10

-5

10

sin gle pulse

-4

10

t1, Square Wave Pulse Duration [sec]

D=0.5

0

10

0.2

0.1

0.05

-1

10

0.02

0.01

JC

θ

-2

10

-5

10

sing le p u ls e

-4

10

t1, Square Wave P ulse Duration [sec]

(Continued)

-3

10

-3

10

* Note s :

(t) = 1.0 oC/W Max.

1. Z

θ

JC

2. D u ty F ac to r, D = t

3. TJM - TC = PDM * Z

P

DM

-2

10

-1

10

1/t2

(t)

θ

JC

t

1

t

2

0

10

1

10

* Notes :

(t) = 3.5 oC/W Max.

1. Z

θ

JC

2. D u ty F a c to r , D = t

3. TJM - TC = PDM * Z

P

DM

-2

10

-1

10

1/t2

(t)

θ

JC

t

1

t

2

0

10

1

10

FCP11N60F/FCPF11N60F Rev. A1

5

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12V

12V

200nF

200nF

3mA

3mA

50KΩ

50KΩ

V

V

Gate Charge Test Circuit & Waveform

V

V

GS

GS

GS

300nF

300nF

Same Type

Same Type

as DUT

as DUT

DUT

DUT

V

V

DS

DS

GS

10V

10V

Resistive Switching Test Circuit & Waveforms

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

Q

Q

g

g

Q

Q

gs

gs

Q

Q

gd

gd

Charge

Charge

10V

10V

10V

10V

R

R

L

DUT

DUT

L

V

V

DD

DD

V

V

DS

DS

V

V

GS

GS

R

R

G

G

V

V

DS

DS

90%

90%

10%

10%

V

V

GS

GS

t

t

d(on)tr

d(on)tr

t

t

on

on

t

t

d(off)

d(off)

t

t

f

f

t

t

off

off

Unclamped Inductive Switching Test Circuit & Waveforms

BV

BV

DSS

L

LL

V

V

DS

DS

BV

BV

DSS

V

V

DSS

I

I

AS

AS

DD

DD

I

IDI

D

D

R

R

G

G

DUT

DUT

t

t

p

p

V

V

DD

DD

1

1

1

1

----

----

----

----

E

=LI

E

=LI

=LI

E

AS

AS

AS

2

2

2

2

2

2

2

AS

AS

AS

I

I

(t)

(t)

D

D

t

t

p

p

DSS

--------------------

-------------------­BV

BV

DSS-VDD

DSS-VDD

Time

Time

V

(t)

V

(t)

DS

DS

FCP11N60F/FCPF11N60F Rev. A1

6

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

DUT

DUT

I

I

SD

SD

Driver

Driver

R

R

G

G

V

V

GS

GS

+

V

V

DS

DS

_

_

L

LL

Same Type

Same Type

as DUT

as DUT

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontroll ed by pulse period

•ISDcontroll ed by pulse period

G

G

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

V

V

DD

DD

V

V

GS

GS

( Driver )

( Driver )

I

I

SD

SD

( DUT )

( DUT )

V

V

DS

DS

( DUT )

( DUT )

Gate Pulse Width

Gate Pulse Width

Gate Pulse Width

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, Body Diode Forward Current

IFM, Body Diode Forward Current

I

I

RM

RM

Body Diode Reverse Current

Body Diode Reverse Current

Body Diode Recoverydv/dt

Body Diode Recoverydv/dt

V

V

SD

SD

Body Diode

Body Diode

Forward Voltage Drop

Forward Voltage Drop

di/dt

di/dt

10V

10V

V

V

DD

DD

FCP11N60F/FCPF11N60F Rev. A1

7

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Mechanical Dimensions

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

TO - 220

FCP11N60F/FCPF11N60F Rev. A1

Dimensions in Millimeters

8

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FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

Mechanical Dimensions

10.16 ±0.20

3.30 ±0.10

15.80 ±0.20

(Continued)

(7.00)

TO-220F

ø3.18 ±0.10

6.68 ±0.20

(1.00x45°)

2.54
(0.70)

±0.20

15.87 ±0.20

9.75 ±0.30

MAX1.47

0.80 ±0.10

0.35 ±0.10

2.54TYP

[2.54

±0.20]

#1

9.40 ±0.20

(30°)

2.54TYP

[2.54

±0.20]

4.70 ±0.20

0.50

+0.10
–0.05

2.76 ±0.20

FCP11N60F/FCPF11N60F Rev. A1

Dimensions in Millimeters

9

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TRADEMARKS

The following includes registered and unregistered trademarks and se rvice marks, owned by Fairchild Semiconductor and/or its global subsidiarie s, and i s not
intended to be an exhaustive list of all such trademarks.

Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *

™

Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
FPS™

®

®

tm

®

®
®

®

*

®

F-PFS™

* EZSWITCH™ and FlashWriter

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

®

FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR

PDP SPM™
Power-SPM™
PowerTrench
PowerXS™

®

®

tm

®

®

SM

Programmable Active Droop™

®

QFET
QS™
Quiet Series™
RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™

®

SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™

®

The Power Franchise

®

TinyBoost™

tm

TinyBuck™

®

TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b ) support or sustain li fe,
and (c) whose failure to perform when properly u sed in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support

.

2. A critical component in any component of a life support, device, or
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fairchild
Semiconductor. The datashe et is for reference information only.

Rev. I37

FCP11N60F/FCPF11N60F Rev. A1

10

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