Fairchild FCP7N60N, FCPF7N60NT service manual

SupreMOS

FCP7N60N / FCPF7N60NT

N-Channel MOSFET

600V, 6.8A, 0.52Ω

FCP7N60N / FCPF7N60NT N-Channel MOSFET

December 2009

TM

Features

•R

• Ultra Low Gate Charge ( Typ.Qg = 17.8nC)

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

MOSFET Maximum Ratings T

Symbol Parameter FCP7N60N FCPF7N60NT Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.46Ω ( Typ.) @ VGS = 10V, ID = 3.4A

DS(on)

TO-220AB
FCP Series

STG

S

G D

Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V

Drain Current
Drain Current - Pulsed (Note 1) 20.4 20.4 A

Single Pulsed Avalanche Energy (Note 2) 79.4 mJ
Avalanche Current 6.8 A
Repetitive Avalanche Energy 0.6 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 4.9 V/ns

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

G S D

o

= 25

C unless otherwise noted

C

-Continuous (T

-Continuous (T

(T

= 25oC) 64.1 30.5 W

C

- Derate above 25

Description

The SupreMOS MOSFET , Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power, A TX
power, and industrial power applications.

D

TO-220F
FCPF Series

= 25oC) 6.8 6.8*

C

= 100oC) 4.3 4.3*

C

o

C 0.51 0.24 W/oC

G

S

300

Thermal Characteristics

Symbol Parameter FCP7N60N FCPF7N60NT Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 1.95 4.1
Thermal Resistance, Case to Heak Sink ( Typical) 0.5 0.5
Thermal Resistance, Junction to Ambient 62.5 62.5

A

o

C

o

C

o

C/WR

©2009 Fairchild Semiconductor Corporation
FCP7N60N / FCPF7N60NT Rev. A

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCP7N60N FCP7N60N TO-220AB - - 50

FCPF7N60NT FCPF7N60NT TO-220F - - 50

FCP7N60N / FCPF7N60NT N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 1mA, Referenced to 25oC-0.6-V/

D

V

= 480V, V

DS

= 480V, V

V

DS

= 0V - - 10

GS

= 0V, TC = 125oC - - 100

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 3.4A - 0.46 0.52 Ω
Forward Transconductance VDS = 20V, ID = 3.4A - 8.5 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

eff Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 91 - pF

C

oss

Q

g(tot)

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 30 40 pF
Reverse Transfer Capacitance - 2.1 3.2 pF

= 100V, VGS = 0V

V

DS

f = 1MHz

Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 17 - pF

Total Gate Charge at 10V
Gate to Source Gate Charge - 3.2 6.3 nC
Gate to Drain “Miller” Charge - 6.0 11.9 nC

V

= 380V,ID = 3.4A

DS

V

= 10V

GS

(Note 4)

ESR Equivalent Series Resistance (G-S) Drain Open - 2.5 - Ω

- 719 960 pF

- 17.8 35.6 nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 6 22 ns
Turn-Off Delay Time - 35 80 ns
Turn-Off Fall Time - 12 24 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I

= 2.3A, RG = 25Ω, Starting TJ = 25°C

AS

3. ISD ≤ 6.8A, di/dt ≤ 200A/µs, VDD ≤ 380V, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 6.8 A
Maximum Pulsed Drain to Source Diode Forward Current - - 20.4 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.8 - µC

= 380V, ID = 3.4A

V

DD

R

= 4.7Ω

G

(Note 4)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs

F

=3.4A - - 1.2 V

SD

= 3.4A

SD

-1224ns

-211-ns

FCP7N60N / FCPF7N60NT Rev. A

2

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

30

10

V

= 15.0 V

GS

10.0 V

6.0 V

4.5 V

4.0 V

60

10

150oC

FCP7N60N / FCPF7N60NT N-Channel MOSFET

, Drain Current[A]

D

I

1

0.5

0.1 1 10 30

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

VDS, Drain-Source Voltage[V]

, Drain Current[A]

D

1

I

0.2
2468

VGS, Gate-Source Voltage[V]

25oC

-55oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

1.0

0.8

[Ω],

0.6

DS(ON)

R

0.4

Drain-Source On-Resistance

0.2
0 4 8 12 16 20

ID, Drain Current [A]

VGS = 10V

VGS = 20V

*Note: TC = 25oC

100

10

150oC

25oC

1

, Reverse Drain Current [A]

S

I

0.1

0.4 0.6 0.8 1.0 1.2

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000

1000

100

Capacitances [pF]

10

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

1

0.1 1 10 100 600

FCP7N60N / FCPF7N60NT Rev. A

gd

VDS, Drain-Source Voltage [V]

10

*Note:

1. V

= 0V

GS

2. f = 1MH z

C

iss

C

oss

C

gd

rss

8

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0369121518

VDS = 120V
V

= 380V

DS

= 480V

V

DS

*Note: ID = 3.4A

Qg, Total Gate Charg e [nC]

3

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