FCP4N60 600V N-Channel MOSFET
FCP4N60
600V N-Channel MOSFET
Features
•650V @TJ = 150°C
•Typ. R
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
• RoHS Compliant
DS(on)
= 1.0Ω
= 12.8nC)
g
G
D
S
.eff = 32pF)
oss
TO-220
FCP Series
December 2008
SuperFET
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has be
conduction loss, provide su
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
perior switching performance, and
G
en tailored to minimize
D
S
TM
Absolute Maximum Ratings
Symbol Parameter FCP4N60 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Continuous (T
- Derate above 25°C
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
3.9
2.5
11.7
128 mJ
3.9 A
5.0 mJ
4.5 V/ns
50
0.4
300 °C
Thermal Characteristics
Symbol Parameter FCP4N60 Unit
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 2.5 °C/W
Thermal Resistance, Junction-to-Ambient 83 °C/W
A
A
A
W
W/°C
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FCP4N60 Rev. A1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP4N60 FCP4N60 TO-220 -- -- 50
FCP4N60 600V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
BV
DS
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited
2. I
= 1.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
≤ 3.9A, di/dt ≤ 200A/μs, VDD ≤ BV
3. I
SD
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V
= 0V, ID = 250μA, TJ = 150°C -- 650 -- V
V
GS
Breakdown Voltage Temperature
DSS
Coefficient
J
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
I
= 250μA, Referenced to 25°C -- 0.6 -- V/°C
D
V
= 0V, ID = 3.9A -- 700 -- V
GS
V
= 480V, TC = 125°C
DS
--
--
--
--
1
10
μA
μA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 2.0A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 210 275 pF
= 10V, ID = 2.0A -- 1.0 1.2 Ω
V
GS
(Note 4)
-- 3.2 -- S
-- 415 540 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 19.5 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 12 16 pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 32 -- pF
Turn-On Delay Time VDD = 300V, ID = 3.9A
= 25Ω
R
Turn-On Rise Time -- 45 100 ns
G
-- 16 45 ns
Turn-Off Delay Time -- 36 85 ns
Turn-Off Fall Time -- 30 70 ns
Total Gate Charge VDS = 480V, ID = 3.9A
= 10V
V
Gate-Source Charge -- 2.4 -- nC
GS
Gate-Drain Charge -- 7.1 -- nC
(Note 4, 5)
-- 12.8 16.6 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 3.9 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.7 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 3.9A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 3.9A
dI
/dt =100A/μs (Note 4)
Reverse Recovery Charge -- 2.07 -- μC
by maximum junction temperature
, Starting TJ = 25°C
DSS
F
-- 277 -- ns
FCP4N60 Rev. A1
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
V
Top : 15.0 V
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
GS
10
1
, Drain Current [A]
D
I
0.1
0.1 1 10
VDS, Drain-Source Voltage [V]
* Notes :
1. 250
2. T
μs Pulse Test
= 25oC
C
1
10
150oC
0
10
, Drain Current [A]
D
I
-1
10
246810
25oC
-55oC
VGS , Gate-Source Voltage [V]
* Note
1. V
2. 250
= 40V
DS
μs Pulse Test
FCP4N60 600V N-Channel MOSFET
Figure 3. On-Resistance Variation vs. Figure 4.
Drain Current and Gate Voltage Variation vs. Sourc
4
3
2
1
[Ω],Drain-Source On-Resistance
DS(ON)
R
0
0.0 2.5 5.0 7.5 10.0 12.5
VGS = 10V
ID, Drain Current [A]
VGS = 20V
* Note : TJ = 25oC
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2
Figure 5. Capacitance Characteristics Figure 6.
1200
1000
800
600
400
Capacitance [pF]
200
0
0
10
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
* Notes :
1. V
C
oss
C
iss
C
rss
1
10
= 0 V
GS
2. f = 1 MHz
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15
Body Diode Forward Voltage
e Current
and Temperatue
150oC
25oC
* Notes :
1. V
2. 250
= 0V
GS
μs Pulse Test
VSD , Source-Drain Voltage [V]
Gate Charge Characteristics
VDS = 120V
VDS = 300V
VDS = 480V
* Note : ID = 3.9A
QG, Total Gate Charge [nC]
FCP4N60 Rev. A1
3 www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs
. Temperature vs. Temperature
1.2
1.1
3.0
2.5
2.0
FCP4N60 600V N-Channel MOSFET
, (Normalized)
BV
1.0
DSS
0.9
*Notes :
1. V
2. I
= 0 V
GS
= 250μA
D
, (Normalized)
R
1.5
DS(ON)
1.0
Drain-Source On-Resistance
0.5
Drain-Source Breakdown Voltage
0.8
-100 -50 0 50 100 150 200
TJ, Junction Temperature [οC]
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
10
10
, Drain Current [A]
D
I
10
Operation in This Area
is Limited by R
1
0
* Notes :
1. T
C
2. T
J
-1
3. Single Pulse
0
10
DS(on)
= 25 oC
= 150 oC
1
10
VDS, Drain-Source Voltage [V]
10 us
4
3
100 us
10 ms
1 ms
2
DC
, Drain Current [A]
D
I
1
2
10
3
10
0
25 50 75 100 125 150
TC, Case Temperature [oC]
*Notes :
1. V
2. I
GS
= 2.0 A
D
= 10 V
FCP4N60 Rev. A1
Figure 11-1. Transient Thermal Response Curve
D=0.5
0
10
(t), Thermal Response
θJC
Z
0.2
0.1
0.05
-1
0.02
10
0.01
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
t1, Square Wave Pulse Duration [sec]
4 www.fairchildsemi.com
* Notes :
1. Z
(t) = 2.5 oC/W Max.
θJC
2. D u ty F a c t o r, D =t
3. TJM - TC = PDM * Z
P
DM
t
1
t
2
-1
10
10
1/t2
(t)
θJC
0
1
10
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FCP4N60 600V N-Channel MOSFET
FCP4N60 Rev. A1
Unclamped Inductive Switching Test Circuit & Waveforms
5 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCP4N60 600V N-Channel MOSFET
FCP4N60 Rev. A1
6 www.fairchildsemi.com
Mechanical Dimensions
FCP4N60 600V N-Channel MOSFET
TO - 220
FCP4N60 Rev. A1
Dimensions in Millimeters
7 www.fairchildsemi.com
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FCP4N60 600V N-Channel MOSFET
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Advance Information Formative / In Design
Preliminary First Production
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Datasheet contains the design specifications for product development. Specifications
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Rev. I37
FCP4N60 Rev. A1
8 www.fairchildsemi.com
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