Fairchild FCP4N60 service manual

FCP4N60 600V N-Channel MOSFET

FCP4N60

600V N-Channel MOSFET

Features

•650V @TJ = 150°C

•Typ. R

• Ultra low gate charge (typ. Q

• Low effective output capacitance (typ. C

• 100% avalanche tested

• RoHS Compliant

DS(on)

= 1.0Ω

= 12.8nC)

g

G

D

S

.eff = 32pF)

oss

TO-220

FCP Series

December 2008

SuperFET

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.

This advanced technology has be
conduction loss, provide su
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.

perior switching performance, and

G

en tailored to minimize

D

S

TM

Absolute Maximum Ratings

Symbol Parameter FCP4N60 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)

Drain Current - Pulsed
Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

- Continuous (T

- Derate above 25°C

= 100°C)

C

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

3.9

2.5

11.7

128 mJ

3.9 A

5.0 mJ

4.5 V/ns
50

0.4

300 °C

Thermal Characteristics

Symbol Parameter FCP4N60 Unit

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case 2.5 °C/W
Thermal Resistance, Junction-to-Ambient 83 °C/W

A
A

A

W

W/°C

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCP4N60 Rev. A1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCP4N60 FCP4N60 TO-220 -- -- 50

FCP4N60 600V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

BV

DS

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

C

oss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited

2. I

= 1.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

≤ 3.9A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V

= 0V, ID = 250μA, TJ = 150°C -- 650 -- V

V

GS

Breakdown Voltage Temperature

DSS

Coefficient

J

Drain-Source Avalanche Breakdown
Voltage

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

I

= 250μA, Referenced to 25°C -- 0.6 -- V/°C

D

V

= 0V, ID = 3.9A -- 700 -- V

GS

V

= 480V, TC = 125°C

DS

--

--

--

--

1

10

μA
μA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source

On-Resistance
Forward Transconductance VDS = 40V, ID = 2.0A

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 210 275 pF

= 10V, ID = 2.0A -- 1.0 1.2 Ω

V

GS

(Note 4)

-- 3.2 -- S

-- 415 540 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 19.5 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 12 16 pF

eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 32 -- pF

Turn-On Delay Time VDD = 300V, ID = 3.9A

= 25Ω

R

Turn-On Rise Time -- 45 100 ns

G

-- 16 45 ns

Turn-Off Delay Time -- 36 85 ns
Turn-Off Fall Time -- 30 70 ns
Total Gate Charge VDS = 480V, ID = 3.9A

= 10V

V

Gate-Source Charge -- 2.4 -- nC

GS

Gate-Drain Charge -- 7.1 -- nC

(Note 4, 5)

-- 12.8 16.6 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 3.9 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.7 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 3.9A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 3.9A

dI

/dt =100A/μs (Note 4)

Reverse Recovery Charge -- 2.07 -- μC

by maximum junction temperature

, Starting TJ = 25°C

DSS

F

-- 277 -- ns

FCP4N60 Rev. A1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V
Top : 15.0 V

10.0 V

8.0V

7.5 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

GS

10

1

, Drain Current [A]

D

I

0.1

0.1 1 10

VDS, Drain-Source Voltage [V]

* Notes :

1. 250

2. T

μs Pulse Test

= 25oC

C

1

10

150oC

0

10

, Drain Current [A]

D

I

-1

10

246810

25oC

-55oC

VGS , Gate-Source Voltage [V]

* Note

1. V

2. 250

= 40V

DS

μs Pulse Test

FCP4N60 600V N-Channel MOSFET

Figure 3. On-Resistance Variation vs. Figure 4.

Drain Current and Gate Voltage Variation vs. Sourc

4

3

2

1

[Ω],Drain-Source On-Resistance

DS(ON)

R

0

0.0 2.5 5.0 7.5 10.0 12.5

VGS = 10V

ID, Drain Current [A]

VGS = 20V

* Note : TJ = 25oC

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

Figure 5. Capacitance Characteristics Figure 6.

1200

1000

800

600

400

Capacitance [pF]

200

0

0

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

* Notes :

1. V

C

oss

C

iss

C

rss

1

10

= 0 V

GS

2. f = 1 MHz

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15

Body Diode Forward Voltage

e Current

and Temperatue

150oC

25oC

* Notes :

1. V

2. 250

= 0V

GS

μs Pulse Test

VSD , Source-Drain Voltage [V]

Gate Charge Characteristics

VDS = 120V

VDS = 300V

VDS = 480V

* Note : ID = 3.9A

QG, Total Gate Charge [nC]

FCP4N60 Rev. A1

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