tm
FCP22N60N / FCPF22N60NT
D
G
S
TO-220F
FCPF series
G D S
TO-220
FCP Series
G D S
SupreMOS
N-Channel MOSFET
600V, 22A, 0.165Ω
FCP22N60N / FCPF22N60NT N-Channel MOSFET
July 2009
TM
Features
• R
• BV
• Ultra Low Gate Charge ( Typ. Qg = 45nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
MOSFET Maximum Ratings
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
TJ, T
T
L
*Drain current limited by maximum junction temperature
= 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A
DS(on)
>650V @ TJ = 150oC
DSS
TC = 25oC unless otherwise noted*
Symbol Parameter FCP22N60N FCPF22N60NT Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Continuous (TC = 25oC) 22 22*
Continuous (TC = 100oC) 13.8 13.8*
(TC = 25oC) 205 39 W
Derate above 25oC 1.64 0.31 W/oC
STG
Drain Current
Drain Current Pulsed (Note 1) 66 66* A
Single Pulsed Avalanche Energy (Note 2) 672 mJ
Avalanche Current 7.3 A
Repetitive Avalanche Energy 2.75 mJ
Peak Diode Recovery dv/dt (Note 3) 20
MOSFET dv/dt 100
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
300
Thermal Characteristics
Symbol Parameter FCP22N60N FCPF22N60NT Units
R
θJC
θJS
R
θJA
Thermal Resistance, Junction to Case 0.61 3.2
Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5
Thermal Resistance, Junction to Ambient 62.5 62.5
V/ns
o
o
o
C/WR
A
C
C
©2009 Fairchild Semiconductor Corporation
FCP22N60N / FCPF22N60NT Rev. A2
www.fairchildsemi.com1
FCP22N60N / FCPF22N60NT N-Channel MOSFET
Package Marking and Ordering Information
TC = 25oC unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FCP22N60N FCP22N60N TO-220 - - 50
FCPF22N60NT FCPF22N60NT TO-220F - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±50V, V
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 3 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.140 0.165 Ω
Forward Transconductance VDS = 20V, ID = 11A - 22 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 196.4 - pF
oss
Q
g(tot)
Q
gs
Q
gd
ESR Equivalent Series Resistance (G-S) Drain Open, f=1MHz - 1 - Ω
Input Capacitance
Output Capacitance - 75.9 - pF
Reverse Transfer Capacitance - 3 - pF
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 43.2 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 8.7 - nC
Gate to Drain “Miller” Charge - 14.5 - nC
ID = 1mA, VGS = 0V, TJ = 25oC 600 - ID = 1mA, VGS = 0V, TJ = 150oC 650 - -
ID = 1mA, Referenced to 25oC - 0.68 - V/oC
VDS = 480V, V
= 0V - - 10
GS
VDS = 480V, TJ = 125oC - - 100
= 0V - - ±100 nA
DS
VDS = 100V, VGS = 0V
- 1950 - pF
f = 1MHz
- 45 - nC
VDS = 380V, ID = 11A,
VGS = 10V
(Note 4)
V
µA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 16.7 - ns
Turn-Off Delay Time - 49 - ns
Turn-Off Fall Time - 4 - ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 7.3A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 22A, di/dt ≤ 200A/µs, VDD ≤ 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP22N60N / FCPF22N60NT Rev. A2
Maximum Continuous Drain to Source Diode Forward Current - - 22 A
Maximum Pulsed Drain to Source Diode Forward Current - - 66 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 6 - µC
VDD = 380V, ID = 11A
RG = 4.7Ω
(Note 4)
= 0V, I
GS
VGS = 0V, I
= 11A - - 1.2 V
SD
= 11A
SD
dIF/dt = 100A/µs
2
- 16.9 - ns
- 350 - ns
www.fairchildsemi.com
Typical Performance Characteristics
2 3 4 5 6 7 8
1
10
100
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250µ
µµ
µs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
1 10
0.1
1
10
100
*Notes:
1. 250
µµµµ
s Pulse Test
2. TC = 25oC
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.3
0.0 0.5 1.0 1.5
1
10
100
*Notes:
1. VGS = 0V
2. 250
µµµµ
s Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 10 20 30 40 50 60
0.1
0.2
0.3
0.4
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[
Ω
Ω
Ω
Ω
]
,
Drain-Source On-Resistance
ID, Drain Current [A]
0 10 20 30 40 50
0
2
4
6
8
10
*Note: ID = 11A
VDS = 120V
VDS = 300V
VDS = 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
0.1 1 10 100
1
10
100
1000
10000
1E5
C
iss
C
oss
C
iss
= Cgs + Cgd (Cds = shorted
)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
600
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FCP22N60N / FCPF22N60NT N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCP22N60N / FCPF22N60NT Rev. A2
3
www.fairchildsemi.com
FCP22N60N / FCPF22N60NT N-Channel MOSFET
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. VGS = 0V
2. ID = 1mA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature
[
o
C
]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. VGS = 10V
2. ID = 11A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature
[
o
C
]
1 10 100 1000
0.01
0.1
1
10
100
10
µµµµ
s
100
µµµµ
s
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
1 10 100 1000
0.01
0.1
1
10
100
10
µµµµ
s
10ms
100
µµµµ
s
1ms
100ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
25 50 75 100 125 150
0
5
10
15
20
25
I
D
, Drain Current [A]
TC, Case Temperature
[
o
C
]
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
- FCP22N60N - FCPF22N60NT
Figure 11. Maximum Drain Current vs.Case Temperature
FCP22N60N / FCPF22N60NT Rev. A2
4
www.fairchildsemi.com
Typical Performance Characteristics
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θθθθ
JC
(t) = 0.61oC/W Max.
2. Duty Factor, D= t1/t
2
3. TJM - TC = PDM * Z
θθθθ
JC
(t)
0.5
Single pulse
Thermal Response
[
Z
θ
θ
θ
θ
JC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.001
0.01
0.1
1
5
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θθθθ
JC
(t) = 3.2 oC/W Max.
2. Duty Factor, D= t1/t
2
3. TJM - TC = PDM * Z
θθθθ
JC
(t)
0.5
Single pulse
Thermal Response
[
Z
θ
θ
θ
θ
JC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Figure 12. Transient Thermal Response Curve - FCP22N60N
Figure 13. Transient Thermal Response Curve - FCPF22N60NT
FCP22N60N / FCPF22N60NT N-Channel MOSFET
FCP22N60N / FCPF22N60NT Rev. A2
www.fairchildsemi.com5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP22N60N / FCPF22N60NT N-Channel MOSFET
FCP22N60N / FCPF22N60NT Rev. A2
6
www.fairchildsemi.com
D U T
V
D S
+
_
D r i v e r
R
G
S a m e T y p e
a s D U T
V
G S
• d v / d t c o n t r o l l e d b y R
G
• I
S D
c o n t r o l l e d b y p u ls e p e r i o d
V
D D
L
I
S D
1 0 V
V
G S
( D r i v e r )
I
S D
( D U T )
V
D S
( D U T )
V
D D
B o d y D i o d e
F o r w a r d V o l t a g e D r o p
V
S D
I
F M
, B o d y D io d e F o r w a r d C u r r e n t
B o d y D i o d e R e v e r s e C u r r e n t
I
R M
B o d y D i o d e R e c o v e r y d v / d t
d i/ d t
D =
G a te P u l s e W i d t h
G a te P u l s e P e r io d
- - - - - - - - - - - - - - - - - - - - - - - - - -
D U T
V
D S
+
_
D r i v e r
R
G
S a m e T y p e
a s D U T
V
G S
• d v / d t c o n t r o l l e d b y R
G
• I
S D
c o n t r o l l e d b y p u ls e p e r i o d
V
D D
LL
I
S D
1 0 V
V
G S
( D r i v e r )
I
S D
( D U T )
V
D S
( D U T )
V
D D
B o d y D i o d e
F o r w a r d V o l t a g e D r o p
V
S D
I
F M
, B o d y D io d e F o r w a r d C u r r e n t
B o d y D i o d e R e v e r s e C u r r e n t
I
R M
B o d y D i o d e R e c o v e r y d v / d t
d i/ d t
D =
G a te P u l s e W i d t h
G a te P u l s e P e r io d
- - - - - - - - - - - - - - - - - - - - - - - - - -
D =
G a te P u l s e W i d t h
G a te P u l s e P e r io d
- - - - - - - - - - - - - - - - - - - - - - - - - -
FCP22N60N / FCPF22N60NT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCP22N60N / FCPF22N60NT Rev. A2
7
www.fairchildsemi.com
Mechanical Dimensions
TO-220
FCP22N60N / FCPF22N60NT N-Channel MOSFET
FCP22N60N / FCPF22N60NT Rev. A2
8
www.fairchildsemi.com
Mechanical Dimensions
FCP22N60N / FCPF22N60NT N-Channel MOSFET
TO-220F
FCP22N60N / FCPF22N60NT Rev. A2
Dimensions in Millimeters
www.fairchildsemi.com9
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intended to be an exhaustive list of all such trademarks.
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THEREIN, WHICH COVERS THESE PRODUCTS.
FCP22N60N / FCPF22N60NT N-Channel MOSFET
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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
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intended for surgical implant into the body or (b) support or sustain life,
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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make changes at any time without notice to improve the design.
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Semiconductor. The datasheet is for reference information only.
Rev. I40
FCP22N60N / FCPF22N60NT Rev. A2
10
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