Fairchild FCP22N60N, FCPF22N60NT service manual

tm

FCP22N60N / FCPF22N60NT

D

G

S

TO-220F
FCPF series

G D S

TO-220
FCP Series

G D S

SupreMOS

N-Channel MOSFET

600V, 22A, 0.165Ω

FCP22N60N / FCPF22N60NT N-Channel MOSFET

July 2009

TM

Features

• R

• BV

• Ultra Low Gate Charge ( Typ. Qg = 45nC)

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

MOSFET Maximum Ratings

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

TJ, T
T

L

*Drain current limited by maximum junction temperature

= 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A

DS(on)

>650V @ TJ = 150oC

DSS

TC = 25oC unless otherwise noted*

Symbol Parameter FCP22N60N FCPF22N60NT Units

Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V

Continuous (TC = 25oC) 22 22*
Continuous (TC = 100oC) 13.8 13.8*

(TC = 25oC) 205 39 W
Derate above 25oC 1.64 0.31 W/oC

STG

Drain Current
Drain Current Pulsed (Note 1) 66 66* A

Single Pulsed Avalanche Energy (Note 2) 672 mJ
Avalanche Current 7.3 A
Repetitive Avalanche Energy 2.75 mJ
Peak Diode Recovery dv/dt (Note 3) 20
MOSFET dv/dt 100

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

Description

The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech­nologies. By utilizing this advanced technology and precise pro­cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.

300

Thermal Characteristics

Symbol Parameter FCP22N60N FCPF22N60NT Units

R

θJC
θJS

R

θJA

Thermal Resistance, Junction to Case 0.61 3.2
Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5
Thermal Resistance, Junction to Ambient 62.5 62.5

V/ns

o

o

o

C/WR

A

C
C

©2009 Fairchild Semiconductor Corporation
FCP22N60N / FCPF22N60NT Rev. A2

www.fairchildsemi.com1

FCP22N60N / FCPF22N60NT N-Channel MOSFET

Package Marking and Ordering Information

TC = 25oC unless otherwise noted

Device Marking Device Package Reel Size Tape Width Quantity

FCP22N60N FCP22N60N TO-220 - - 50

FCPF22N60NT FCPF22N60NT TO-220F - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±50V, V

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 3 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.140 0.165 Ω
Forward Transconductance VDS = 20V, ID = 11A - 22 - S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

C

eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 196.4 - pF

oss

Q

g(tot)

Q

gs

Q

gd

ESR Equivalent Series Resistance (G-S) Drain Open, f=1MHz - 1 - Ω

Input Capacitance
Output Capacitance - 75.9 - pF
Reverse Transfer Capacitance - 3 - pF
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 43.2 - pF

Total Gate Charge at 10V
Gate to Source Gate Charge - 8.7 - nC

Gate to Drain “Miller” Charge - 14.5 - nC

ID = 1mA, VGS = 0V, TJ = 25oC 600 - ­ID = 1mA, VGS = 0V, TJ = 150oC 650 - -

ID = 1mA, Referenced to 25oC - 0.68 - V/oC
VDS = 480V, V

= 0V - - 10

GS

VDS = 480V, TJ = 125oC - - 100

= 0V - - ±100 nA

DS

VDS = 100V, VGS = 0V

- 1950 - pF

f = 1MHz

- 45 - nC
VDS = 380V, ID = 11A,
VGS = 10V

(Note 4)

V

µA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 16.7 - ns
Turn-Off Delay Time - 49 - ns
Turn-Off Fall Time - 4 - ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 7.3A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 22A, di/dt ≤ 200A/µs, VDD ≤ 380V, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

FCP22N60N / FCPF22N60NT Rev. A2

Maximum Continuous Drain to Source Diode Forward Current - - 22 A
Maximum Pulsed Drain to Source Diode Forward Current - - 66 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 6 - µC

VDD = 380V, ID = 11A
RG = 4.7Ω

(Note 4)

= 0V, I

GS

VGS = 0V, I

= 11A - - 1.2 V

SD

= 11A

SD

dIF/dt = 100A/µs

2

- 16.9 - ns

- 350 - ns

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Typical Performance Characteristics

2 3 4 5 6 7 8

1

10

100

-55oC

150oC

*Notes:

1. VDS = 20V

2. 250µ

µµ

µs Pulse Test

25oC

I

D

,Drain Current[A]

VGS,Gate-Source Voltage[V]

1 10

0.1

1

10

100

*Notes:

1. 250

µµµµ

s Pulse Test

2. TC = 25oC

V

GS

=

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.0 V

4.0 V

I

D

,Drain Current[A]

VDS,Drain-Source Voltage[V]

0.3

0.0 0.5 1.0 1.5

1

10

100

*Notes:

1. VGS = 0V

2. 250

µµµµ

s Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 10 20 30 40 50 60

0.1

0.2

0.3

0.4

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[

Ω

Ω

Ω

Ω

]

,

Drain-Source On-Resistance

ID, Drain Current [A]

0 10 20 30 40 50

0

2

4

6

8

10

*Note: ID = 11A

VDS = 120V
VDS = 300V
VDS = 480V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

0.1 1 10 100

1

10

100

1000

10000

1E5

C

iss

C

oss

C

iss

= Cgs + Cgd (Cds = shorted

)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. VGS = 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

600

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FCP22N60N / FCPF22N60NT N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FCP22N60N / FCPF22N60NT Rev. A2

3

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