Fairchild FCP190N60, FCPF190N60 service manual
SuperFET® II
G
S
D
TO-220F
G
S
D
TO-220
G D S
FCP190N60 / FCPF190N60
600V N-Channel MOSFET
FCP190N60 / FCPF190N60 N-Channel
March 2012
Features
• 650V @TJ = 150°C
•Max. R
• Ultra low gate charge (typ. Q
• Low effective output capacitance (typ. C
• 100% avalanche tested
DS(on)
= 199mΩ
= 57nC)
g
.eff = 160pF)
oss
Absolute Maximum Ratings T
Symbol Parameter FCP190N60 FCPF190N60 Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 600 V
Gate to Source Voltage
Drain Current
Drain Current - Pulsed (Note 1) 60.6 60.6* A
Single Pulsed Avalanche Energy (Note 2) 400 mJ
Avalanche Current (Note 1) 4.0 A
Repetitive Avalanche Energy (Note 1) 2.1 mJ
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
MOSFET dv/dt 100 V/ns
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted
C
-DC ±20
-AC (f >1Hz) ±30
-Continuous (T
-Continuous (T
(T
= 25oC) 208 39 W
C
- Derate above 25
Description
SuperFET®II is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET
power conversion in switching mode operation for system miniaturization and higher efficiency.
= 25oC) 20.2 20.2*
C
= 100oC) 12.7 12.7*
C
o
C 1.67 0.31 W/oC
®
II is very suitable for various AC/DC
300
MOSFET
V
A
o
C
o
C
Thermal Characteristics
Symbol Parameter
R
θJC
θCS
R
θJA
©2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C11
Thermal Resistance, Junction to Case 0.6 3.2
Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5
Thermal Resistance, Junction to Ambient 62.5 62.5
FCP190N60 FCPF190N60
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Units
o
C/WR
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP190N60 FCP190N60 TO-220 - - 50
FCPF190N60 FCPF190N60 TO-220F - - 50
FCP190N60 / FCPF190N60 N-Channel
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
V
= 0V, ID = 10mA, TJ = 25°C 600 - - V
BV
ΔBV
ΔT
BV
I
DSS
I
GSS
DSS
DSS
J
DS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
GS
= 0V, ID = 10mA, TJ = 150°C 650 - - V
V
GS
I
= 10mA, Referenced to 25oC - 0.67 - V/oC
D
V
= 0V, ID = 20A - 700 - V
GS
V
= 480V, V
DS
= 480V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA2.5-3.5V
Static Drain to Source On Resistance VGS = 10V, ID = 10A - 0.17 0.199 Ω
= 20V, ID = 10A
Forward Transconductance
V
DS
-21-S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 160 - pF
C
oss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 1630 2165 pF
Reverse Transfer Capacitance - 85 128 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Output Capacitance VDS = 380V, VGS = 0V, f = 1.0MHz - 42 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 9 - nC
Gate to Drain “Miller” Charge - 21 - nC
V
= 380V, ID = 10A
DS
V
= 10V
GS
(Note 4)
ESR Equivalent Series Resistance Drain open 1 Ω
- 2220 2950 pF
-5774nC
μA
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 10 30 ns
Turn-Off Delay Time - 64 138 ns
Turn-Off Fall Time - 5 20 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
= 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
2. I
AS
3. I
≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP190N60 / FCPF190N60 Rev. C11
Maximum Continuous Drain to Source Diode Forward Current - - 20.2 A
Maximum Pulsed Drain to Source Diode Forward Current - - 60.6 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 3.8 - μC
, Starting TJ = 25°C
DSS
= 380V, ID = 10A
V
DD
V
= 10V, Rg = 4.7Ω
GS
(Note 4)
= 0V, I
GS
= 0V, I
V
GS
dI
/dt = 100A/μs
F
= 10A - - 1.2 V
SD
= 10A
SD
2
-2050ns
- 280 - ns
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Typical Performance Characteristics
0.1 1 10
0.3
1
10
50
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
2345678
1
10
100
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source V oltage[V ]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 1020304050
0.1
0.2
0.3
0.4
0.5
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10 100 600
0.5
1
10
100
1000
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source V olta ge [V ]
0 1224364860
0
2
4
6
8
10
*Note: ID = 10A
VDS = 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te Charge [n C ]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FCP190N60 / FCPF190N60 N-Channel
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCP190N60 / FCPF190N60 Rev. C11
3
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