Fairchild FCP11N60N, FCPF11N60NT service manual
tm
August 2009
SupreMOS
FCP11N60N / FCPF11N60NT
N-Channel MOSFET
600V, 10.8A, 0.299Ω
FCP11N60N / FCPF11N60NT N-Channel MOSFET
TM
Features
•R
• Ultra Low Gate Charge ( Typ. Qg = 27.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 0.255Ω ( Typ.)@ VGS = 10V, ID = 5.4A
DS(on)
TO-220
G D S
Symbol Parameter FCP11N60N FCPF11N60NT Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 32.4 32.4* A
Single Pulsed Avalanche Energy (Note 2) 201.7 mJ
Avalanche Current 3.7 A
Repetitive Avalanche Energy 0.94 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FCP Series
C
D
G
S
= 25oC unless otherwise noted*
-Continuous (T
-Continuous (T
(T
= 25oC) 94.0 32.1 W
C
- Derate above 25
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
TO-220F
FCPF Series
S
= 25oC) 10.8 10.8*
C
= 100oC) 6.8 6.8*
C
o
C0.750.26W/
300
Thermal Characteristics
Symbol Parameter FCP11N60N FCPF11N60NT Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 1.33 3.9
Thermal Resistance, Case to Heat Sink (Typical) 0.5 0.5
Thermal Resistance, Junction to Ambient 62.5 62.5
A
o
C
o
C
o
C
o
C/WR
©2009 Fairchild Semiconductor Corporation
FCP11N60N / FCPF11N60NT Rev. A
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCP11N60N FCP11N60N TO-220 - - 50
FCPF11N60NT FCPF11N60NT TO-220F - - 50
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 1mA, Referenced to 25oC - 0.73 - V/oC
D
V
= 480V, V
DS
= 480V, V
V
DS
= 0V - - 10
GS
= 0V, TC = 125oC - - 100
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 5.4A - 0.255 0.299 Ω
Forward Transconductance VDS = 40V, ID = 5.4A - 13.5 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 130 - pF
C
oss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 45 60 pF
Reverse Transfer Capacitance - 3 5 pF
= 100V, VGS = 0V
V
DS
f = 1MHz
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 25 - pF
Total Gate Charge at 10V
= 380V, ID = 5.4A,
V
Gate to Source Gate Charge - 4.9 - nC
Gate to Drain “Miller” Charge - 8.8 - nC
DS
V
= 10V
GS
(Note 4 )
ESR Equivalent Series Resistance (G-S) Drain Open 2.0 Ω
- 1130 1505 pF
- 27.4 35.6 nC
μA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 9.1 28.2 ns
Turn-Off Delay Time - 42.0 94.0 ns
Turn-Off Fall Time - 10.0 30.0 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
= 3.7A, RG = 25Ω, Starting TJ = 25°C
AS
3. ISD ≤ 10.8A, di/dt ≤ 200A/μs, VDD = 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
FCP11N60N / FCPF11N60NT Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 10.8 A
Maximum Pulsed Drain to Source Diode Forward Current - - 32.4 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 3.1 - μC
= 380V, ID = 5.4A
V
DD
= 4.7Ω
R
G
(Note 4)
= 0V, I
GS
= 0V, I
V
GS
dI
/dt = 100A/μs
F
= 5.4A - - 1.2 V
SD
= 5.4A
SD
2
- 13.6 37.2 ns
- 268 - ns
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Typical Performance Characteristics
FCP11N60N / FCPF11N60NT N-Channel MOSFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
100
V
=
15.0 V
GS
10.0 V
8.0 V
7.0 V
6.5 V
10
6.0 V
5.5 V
5.0 V
1
, Drain Current[A]
D
I
0.1
0.1 1 10 20
VDS, Drain-Source Voltage[V]
*Notes:
1. 250
2. T
μ
s Pulse Test
= 25oC
C
60
10
1
, Drain Current[A]
D
I
0.1
150oC
2468
VGS, Gate-Source Voltage[V]
-55oC
25oC
*Notes:
1. V
2. 250
= 20V
DS
μ
s Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.7
0.6
,
0.5
]
Ω
[
0.4
DS(ON)
R
0.3
Drain-Source On-Resistance
0.2
0 8 16 24 32
ID, Drain Current [A]
VGS = 10V
VGS = 20V
*Notes: T
= 25oC
C
100
150oC
10
25oC
, Reverse Drain Current [A]
S
I
1
0.40.60.81.01.21.4
*Notes:
1. VGS = 0V
μ
s Pulse Test
2. 250
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
6000
4000
2000
Capacitances [pF]
C
0
0.1 1 10 100 600
FCP11N60N / FCPF11N60NT Rev. A
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted
iss
C
= Cds + C
oss
C
= C
rss
gd
C
oss
C
iss
rss
gd
*Notes:
1. V
2. f = 1MHz
GS
= 0V
)
10
8
VDS = 120V
V
= 300V
DS
V
= 480V
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
*Notes: I
= 5.4A
0
0 5 10 15 20 25 30
D
Qg, Total Gate Charge [nC]
3
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