Fairchild FCP11N60F, FCPF11N60F service manual

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

FCP11N60F

/FCPF11N60F

600V N-Channel MOSFET

Features

• 650V @TJ = 150°C

•Typ. R

• Fast Recovery Type ( t

• Ultra Low Gate Charge (typ. Q

• Low Effective Output Capacitance (typ. C

• 100% avalanche tested

• RoHS Compliant

DS(on)

= 0.32Ω

= 120ns)

TO-220

= 40nC)

eff.=95pF)

oss

GSD

December 2008

SuperFET

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high

age MOSFET family that is utilizing an advanced charge

volt balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

" "

TO-220F

Absolute Maximum Ratings

Symbol Parameter FCP11N60F FCPF11N60F Units

GSS

dv/dt Peak Diode Recovery dv/dt P

, T

STG

* Drain current limited by maximum junction termperature.

Drain Current - Continuous (TC = 25°C) 11 11 * A

- Continuous (T Drain Current - Pulsed Gate-Source Voltage ± 30 V Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy

Power Dissipation (TC = 25°C) 125 36 * W

- Derate above 25°C 1.0 0.29 * W/°C Operating and Storage Temperature Range -55 to +150 °C Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

= 100°C) 7 7 * A

(Note 1)

(Note 2) (Note 1) (Note 1) (Note 3)

33 33 * A

340 mJ

11 A

12.5 mJ

4.5 V/ns

300 °C

Thermal Characteristics

Symbol Parameter FCP11N60F FCPF11N60F Units

θJC

θCS

θJA

Thermal Resistance, Junction-to-Case 1.0 3.5 °C/W Thermal Resistance, Case-to-Sink 0.5 -- °C/W Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

FCP11N60F/FCPF11N60F Rev. A1

www.fairchildsemi.com

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCP11N60F FCP11N60F TO-220 -- -- 50

FCPF11N60F FCPF11N60F TO-220F -- -- 50

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

DSS

∆BV ∆T

DSS

GSSF

GSSR

On Characteristics

GS(th)

DS(on)

Dynamic Characteristics

iss

oss

rss

oss

Switching Characteristics

d(on)

d(off)

Drain-Source Diode Characteristics and Maximum Ratings

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

2. I

3. I

≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA, TJ = 25°C 600 -- -- V

= 0 V, ID = 250 µA, TJ = 150°C -- 650 -- V

Breakdown Voltage Temperature

DSS

Coefficient Drain-Source Avalanche Breakdown

ID = 250 µA, Referenced to 25°C -- 0.6 -- V/°C

VGS = 0 V, ID = 11 A -- 700 -- V

Voltage Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 µA

= 480 V, TC = 125°C -- -- 100 µA

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V - - -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V Static Drain-Source

VGS = 10 V, ID = 5.5 A -- 0.32 0.38 Ω

On-Resistance Forward Transconductance VDS = 40 V, ID = 5.5 A

Input Capacitance VDS = 25 V, VGS = 0 V, Output Capacitance -- 671 870 pF

f = 1.0 MHz

(Note 4)

-- 9.7 -- S

-- 1148 1490 pF

Reverse Transfer Capacitance -- 63 82 pF Output Capacitance VDS = 480 V, VGS = 0 V,

-- 35 -- pF

f = 1.0 MHz

eff. Effective Output Capacitance VDS = 0V to 480 V, VGS = 0 V -- 95 -- pF

Turn-On Delay Time VDD = 300 V, ID = 11 A,

= 25 Ω

Turn-On Rise Time -- 98 205 ns

-- 34 80 ns

Turn-Off Delay Time -- 119 250 ns Turn-Off Fall Time -- 56 120 ns Total Gate Charge VDS = 480 V, ID = 11 A,

= 10 V

Gate-Source Charge -- 7.2 -- nC

(Note 4, 5)

-- 40 52 nC

Gate-Drain Charge -- 21 -- nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A -- -- 1.4 V Reverse Recovery Time VGS = 0 V, IS = 11 A,

/ dt = 100 A/µs

Reverse Recovery Charge -- 0.8 -- µC

Starting TJ = 25°C

DSS,

(Note 4)

-- 120 -- ns

FCP11N60F/FCPF11N60F Rev. A1

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Typical Performance Characterist ics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V Botto m : 5.5 V

, Drain Current [A]

-1

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

150oC

, Drain Current [A]

* Notes :

s Pulse Test

1. 250 = 25oC

2. T

-1

246810

25oC

-55oC

* Note

1. V

2. 250

= 40V

s Pulse Test

VGS , Ga te -Sourc e Volta g e [V]

and Temperatue

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET

25 oC

* Notes :

= 0V

1. V

s Pulse Test

2. 250

1.0

0.8

0.6

Ω

[

DS(ON)

0.4

0.2

Drain-Source On-Resistance

0.0 0 5 10 15 20 25 30 35 40

VGS = 10V

ID, Drain Cu rre n t [A]

VGS = 20V

* Note : TJ = 25oC

, Reverse Drain Current [A]

-1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

150 oC

VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000

5000

4000

3000

2000

Capacitance [pF]

1000

-1

oss

iss

rss

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

oss

= C

rss

* Notes :

1. V

2. f = 1 MHz

= 0 V

VDS, Drain-Source Voltage [V]

, Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45

QG, Total Gate C h arg e [n C ]

VDS = 100V

VDS = 250V

VDS = 400V

* Note : ID = 11A

FCP11N60F/FCPF11N60F Rev. A1

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