Fairchild FCI7N60 service manual

FCI7N60 600V N-Channel MOSFET

FCI7N60

600V N-Channel MOSFET

Features

• 650V @TJ = 150°C

•Typ. R

• Ultra Low Gate Charge (typ. Q

• Low Effective Output Capacitance (typ. C

• 100% Avalanche Tested

• RoHS Compliant

DS(on)

= 0.53Ω

= 25nC)

g

eff. = 60pF)

oss

December 2008

SuperFET

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.

This advanced technology has been tailored to minimize con­duction loss, provide superior switching performance, and with­stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min­iaturization and higher efficiency.

D

{

{

z

z









z

G

{

{

z
z

z

TM

{

GSD

{

S

Absolute Maximum Ratings

Symbol Parameter FCI7N60 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

Drain-Source Voltage 600 V

Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed

Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 1)

(Note 1)

(Note 3)

7

4.4

21

230 mJ

7A

8.3 mJ

4.5 V/ns

83

0.67

300 °C

Thermal Characteristics

Symbol Parameter FCI7N60 Unit

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case 1.5 °C/W

Thermal Resistance, Junction-to-Ambient 62.5 °C/W

A
A

A

W

W/°C

©2008 Fairchild Semiconductor Corporation

FCI7N60 Rev. A3

1

www.fairchildsemi.com

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCI7N60 FCI7N60 I2-PAK -- -- 50

FCI7N60 600V N-Channel MOSFET

Electrical Characteristics

TC = 25°C unless other wise noted

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

BV

DS

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

C

oss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I

= 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V

= 0V, ID = 250µA, TJ = 150°C--650--V

V

GS

Breakdown Voltage Temperature

DSS

Coefficient

J

Drain-Source Avalanche Breakdown
Voltage

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

= 250µA, Referenced to 25°C--0.6--V/°C

I

D

VGS = 0V, ID = 7A

= 480V, TC = 125°C

V

DS

-- 700 -- V

--

--

--

--

1

10

µA
µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V

Static Drain-Source
On-Resistance

Forward Transconductance VDS = 40V, ID = 3.5A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 380 500 pF

= 10V, ID = 3.5A -- 0.53 0.6 Ω

V

GS

(Note 4)

-- 6 -- S

-- 710 920 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 34 -- pF

Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 22 29 pF

eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 60 -- pF

Turn-On Delay Time VDD = 300V, ID = 7A

= 25Ω

R

Turn-On Rise Time -- 55 120 ns

G

-- 35 80 ns

Turn-Off Delay Time -- 75 160 ns

Turn-Off Fall Time -- 32 75 ns

Total Gate Charge VDS = 480V, ID = 7A

= 10V

V

Gate-Source Charge -- 4.2 5.5 nC

GS

Gate-Drain Charge -- 11.5 -- nC

(Note 4, 5)

-- 23 30 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 7A

/dt =100A/µs

dI

Reverse Recovery Charge -- 4.5 -- µC

, Starting TJ = 25°C

DSS

F

(Note 4)

-- 360 -- ns

FCI7N60 Rev. A3

2

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

6.5 V

10

6.0 V
Bottom : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

* Notes :

1. 250

2. T

1

10

µ

s Pulse Test

= 25°C

C

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

2.0

1.8

1.6

1.4

],

Ω

1.2

[

1.0

DS(ON)

R

0.8

0.6

0.4

Drain-Source On-Resistance

0.2

0.0
0 5 10 15 20

VGS = 10V

VGS = 20V

* Note : TJ = 25°C

ID, Drain Current [A]

1

10

150°C

0

10

, Drain Current [A]

D

I

-1

10

246810

25°C

-55°C

* Note

1. V

2. 250

DS

= 40V

µ

VGS , Gate-Source Voltage [V]

and Temperatue

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

150°C

25°C

VSD , Source-Drain Voltage [V]

* Notes :

1. V

2. 250

= 0V

GS

µ

FCI7N60 600V N-Channel MOSFET

s Pulse Test

s Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3000

2000

1000

Capacitanc e [pF]

0

10

FCI7N60 Rev. A3

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

oss

* Notes :

1. V

10

1

GS

2. f = 1 MHz

C

iss

C

rss

-1

0

10

= 0 V

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25

QG, Total Gate Charge [nC]

3

VDS = 100V

VDS = 250V

VDS = 400V

* Note : ID = 7A

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