Fairchild FCI25N60N service manual

tm

FCI25N60N_F102

D

G

S

N-Channel MOSFET

600V, 25A, 0.125Ω

June 2010

SupreMOS

FCI25N60N_F102 N-Channel MOSFET

TM

Features

•R

• Ultra Low Gate Charge ( Typ. Qg = 57nC)

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A

DS(on)

= 25oC unless otherwise noted*

C

Symbol Parameter FCI25N60N_F102 Units

Drain to Source Voltage 600 V

Gate to Source Voltage ±30 V

Continuous (T

Continuous (T

(T

= 25oC) 216 W

C

Derate above 25

STG

Drain Current

Drain Current Pulsed (Note 1) 75 A

Single Pulsed Avalanche Energy (Note 2) 861 mJ

Avalanche Current 8.3 A

Repetitive Avalanche Energy 2.2 mJ

Peak Diode Recovery dv/dt (Note 3) 20

MOSFET dv/dt 100

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech­nologies. By utilizing this advanced technology and precise pro­cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.

= 25oC) 25

C

= 100oC) 16

C

o

C1.72W/

300

Thermal Characteristics

Symbol Parameter FCI25N60N_F102 Units

R

θJC

θCS

R

θJA

Thermal Resistance, Junction to Case 0.58

Thermal Resistance, Case to Heat Sink (Typical) 0.5

Thermal Resistance, Junction to Ambient 62.5

A

V/ns

o

o

o

C/WR

o

C

C

C

©2010 Fairchild Semiconductor Corporation
FCI25N60N_F102 Rev. A

www.fairchildsemi.com1

FCI25N60N_F102 N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FCI25N60N FCI25N60N_F102 I2PAK - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 262 - pF

C

oss

Q

g(tot)

Q

gs

Q

gd

ESR Equivalent Series Resistance (G-S) Drain Open, f=1MHz - 1 - Ω

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V,TJ = 25oC600--V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 1mA, Referenced to 25oC - 0.74 - V/oC

D

V

= 480V, V

DS

= 480V, TJ = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.0 V

Static Drain to Source On Resistance VGS = 10V, ID = 12.5A - 0.107 0.125 Ω

Forward Transconductance VDS = 20V, ID = 12.5A - - S

Input Capacitance

Output Capacitance - 103 137 pF

Reverse Transfer Capacitance - 3.2 5 pF

= 100V, VGS = 0V

V

DS

f = 1MHz

- 2520 3352 pF

Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 55 - pF

Total Gate Charge at 10V

V

= 380V, ID = 12.5A,

Gate to Source Gate Charge - 10 - nC

Gate to Drain “Miller” Charge - 18 - nC

DS

V

= 10V

GS

(Note 4)

-5774nC

μA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 22 54 ns

Turn-Off Delay Time - 68 146 ns

Turn-Off Fall Time - 5 20 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 8.3A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 25A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 25 A

Maximum Pulsed Drain to Source Diode Forward Current - - 75 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 7 - μC

= 380V, ID = 12.5A

V

DD

R

= 4.7Ω

G

(Note 4)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs

F

= 12.5A - - 1.2 V

SD

= 12.5A

SD

-2152ns

- 370 - ns

FCI25N60N_F102 Rev. A

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Typical Performance Characteristics

0.05 0.1 1 10 30

0.3

1

10

100

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

VGS = 15V

10V
8V
6V
4V

2468

1

10

100

-55oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0 20406080

100

150

200

250

300

350

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.4 0.6 0.8 1.0 1.2

1

10

100

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0 102030405060

0

2

4

6

8

10

*Note: ID = 12.5A

VDS = 120V
V

DS

= 300V

V

DS

= 480V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

0.1 1 10 100 600

10

0

10

1

10

2

10

3

10

4

10

5

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FCI25N60N_F102 N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FCI25N60N_F102 Rev. A

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